LM3146 High Voltage Transistor Array General Description Features The LM3146 consists of five high voltage general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially-connected pair. The transistors are well suited to a wide variety of applications in low power system in the dc through VHF range. They may be used as discrete transistors in conventional circuits however, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching. The LM3146 is supplied in a 14-lead molded dual-in-line package for applications requiring only a limited temperature range. Y Y Y Y Y High voltage matched pairs of transistors, VBE matched g 5 mV, input offset current 2 mA max at IC e 1 mA Five general purpose monolithic transistors Operation from dc to 120 MHz Wide operating current range Low noise figure 3.2 dB typ at 1 kHz Applications Y Y Y General use in all types of signal processing systems operating anywhere in the frequency range from dc to VHF Custom designed differential amplifiers Temperature compensated amplifiers Connection Diagram Dual-In-Line and Small Outline Packages TL/H/7959 – 1 Top View Order Number LM3146M or LM3146N See NS Package Number M14A or N14A C1995 National Semiconductor Corporation TL/H/7959 RRD-B30M115/Printed in U. S. A. LM3146 High Voltage Transistor Array February 1995 Absolute Maximum Ratings Soldering Information Dual-In-Line Package Soldering (10 seconds) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. LM3146 260§ C Small Outline Package Vapor Phase (60 seconds) Infrared (15 seconds) Units Power Dissipation: Each transistor TA e 25§ C to 55§ C 300 mW TA l 55§ C Derate at 6.67 mW/§ C Power Dissipation: Total Package TA e 25§ C 500 mW TA l 25§ C Derate at 6.67 mW/§ C Collector to Emitter Voltage, VCEO 30 V 40 V Collector to Base Voltage, VCBO Collector to Substrate Voltage, VCIO (Note 1) 40 V Emitter to Base Voltage, VEBO (Note 2) 5 V Collector to Current, IC 50 mA b 40 to a 85 Operating Temperature Range §C b 65 to a 150 Storage Temperature Range §C 215§ C 220§ C See AN-450 ‘‘Surface Mounting Methods and Their Effect on Product Reliability’’ for other methods of soldering surface mount devices. DC Electrical Characteristics TA e 25§ C Symbol Parameter Limits Conditions Min Typ Units Max V(BR)CBO Collector to Base Breakdown Voltage IC e 10 mA, IE e 0 40 72 V V(BR)CEO Collector to Emitter Breakdown Voltage IC e 1 mA, IB e 0 30 56 V V(BR)CIO Collector to Substrate Breakdown Voltage ICI e 10 mA, IB e 0, IE e 0 40 72 V V(BR)EBO Emitter to Base Breakdown Voltage (Note 2) IC e 0, IE e 10 mA 5 7 V ICBO Collector Cutoff Current VCB e 10V, IE e 0 0.002 100 nA ICEO Collector Cutoff Current VCE e 10V, IB e 0 (Note 3) 5 mA hFE Static Forward Current Transfer Ratio (Static Beta) IC e 10 mA, VCE e 5V IC e 1 mA, VCE e 5V IC e 10 mA, VCE e 5V IB1 – IB2 Input Offset Current for Matched Pair Q1 and Q2 IC1 e 1C2 e 1 mA, VCE e 5V 0.3 2 mA VBE Base to Emitter Voltage IC e 1 mA, VCE e 3V 0.73 0.83 V VBE1 – VBE2 Magnitude of Input Offset Voltage for Differential Pair VCE e 5V, IE e 1 mA 0.48 5 mV DVBE/DT Temperature Coefficient of Base to Emitter Voltage VCE e 5V, IE e 1 mA VCE(SAT) Collector to Emitter Saturation Voltage DV10/DT Temperature Coefficient of Input Offset Voltage 30 0.63 85 100 90 b 1.9 mV/§ C IC e 10 mA, IB e 1 mA 0.33 V IC e 1 mA, VCE e 5V 1.1 mV/§ C Note 1: The collector of each transistor is isolated from the substrate by an integral diode. The substrate must be connected to a voltage which is more negative than any collector voltage in order to maintain isolation between transistors and provide normal transistor action. To avoid undesired coupling between transistors, the substrate terminal should be maintained at either dc or signal (ac) ground. A suitable bypass capacitor can be used to establish a signal ground. Note 2: If the transistors are forced into zener breakdown (V(BR)EBO), degradation of forward transfer current ratio (hFE) can occur. Note 3: See curve. 2 AC Electrical Characteristics Symbol Parameter Limits Conditions Min Typ Units Max NF Low Frequency Noise Figure f e 1 kHz, VCE e 5V, IC e 100 mA, RS e 1 kX fT Gain Bandwidth Product VCE e 5V, IC e 3 mA CEB Emitter to Base Capacitance VEB e 5V, IE e 0 0.70 pF CCB Collector to Base Capacitance VCB e 5V, IC e 0 0.37 pF CCI Collector to Substrate Capacitance VCI e 5V, IC e 0 2.2 pF 300 3.25 dB 500 MHz Low Frequency, Small Signal Equivalent Circuit Characteristics hfe Forward Current Transfer Ratio f e 1 kHz, VCE e 3V, IC e 1 mA hie Short Circuit Input Impedance f e 1 kHz, VCE e 3V, IC e 1 mA 100 3.5 kX hoe Open Circuit Output Impedance f e 1 kHz, VCE e 3V, IC e 1 mA 15.6 mmho hre Open Circuit Reverse Voltage Transfer Ratio f e 1 kHz, VCE e 3V, IC e 1 mA 1.8 x 10b4 Forward Transfer Admittance f e 1 MHz, VCE e 3V, IC e 1 mA 31 b j 1.5 Yie Input Admittance f e 1 MHz, VCE e 3V, IC e 1 mA 0.3 a j 0.04 mmho Yoe Output Admittance f e 1 MHz, VCE e 3V, IC e 1 mA 0.001 a j 0.03 mmho Yre Reverse Transfer Admittance f e 1 MHz, VCE e 3V, IC e 1 mA (Note 3) mmho Admittance Characteristics Yfe mmho Note 1: The collector of each transistor is isolated from the substrate by an integral diode. The substrate must be connected to a voltage which is more negative than any collector voltage in order to maintain isolation between transistors and provide normal transistor action. To avoid undesired coupling between transistors, the substrate terminal should be maintained at either dc or signal (ac) ground. A suitable bypass capacitor can be used to establish a signal ground. Note 2: If the transistors are forced into zener breakdown (V(BR)EBO), degradation of forward transfer current ratio (hFE) can occur. Note 3: See curve. 3 Typical Performance Characteristics ICEO vs TA for Any Transistor ICBO vs TA for Any Transistor hFE vs IC for Any Transistor VBE vs TA for Any Transistor VCE(SAT) vs IC for Any Transistor IIO vs IC (Q1 and Q2) VIO vs TA for Q1 and Q2 VBE and VIO vs IE for Q1 and Q2 NF vs IC @ RS e 500X TL/H/7959 – 2 4 Typical Performance Characteristics NF vs IC e RS e 10 kX hfe, hie, hoe, hre vs IC Yfe vs f Yie vs f Yoe vs f Yre vs f fT vs IC CEB, CCB, CCI vs Bias Voltage NF vs IC @ RS e 1 kX (Continued) TL/H/7959 – 3 5 LM3146 High Voltage Transistor Array Physical Dimensions inches (millimeters) SO Package (M) Order Number LM3146M NS Package Number M14A Molded Dual-In-Line Package (N) Order Number LM3146N NS Package Number N14A LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. 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