HITACHI 2SC4197

2SC4197
Silicon NPN Epitaxial
Application
UHF frequency converter, wide band amplifier
Outline
MPAK
3
1
2
1. Emitter
2. Base
3. Collector
2SC4197
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
25
V
Collector to emitter voltage
VCEO
13
V
Emitter to base voltage
VEBO
3
V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
25
—
—
V
I C = 10 µA, IE = 0
Collector cutoff current
I CBO
—
—
0.1
µA
VCB = 15 V, IE = 0
Collector cutoff current
I CEO
—
—
10
µA
VCE = 13 V, RBE = ∞
Emitter cutoff current
I EBO
—
—
0.3
µA
VEB = 3 V, IC = 0
Collector to emitter saturation
voltage
VCE(sat)
—
—
0.3
V
I C = 20 mA, IB = 4 mA
DC current transfer ratio
hFE
50
—
180
Collector output capacitance
Cob
—
0.85
1.3
pF
VCB = 10 V, IE = 0, f = 1MHz
Gain bandwidth product
fT
3.0
3.8
—
GHz
VCE = 5 V, IC = 20 mA
Conversion gain
CG
—
19
—
dB
VCC = 5 V, IC = 0.8 mA,
fin = 900 MHz
Noise figure
NF
—
8
—
dB
f osc = 930 MHz (–5dBm),
f out = 30 MHz
Note: Marking is “TI–”.
2
VCE = 5 V, IC = 5 mA
2SC4197
DC Current Transfer Ratio vs.
Collector Current
200
150
DC Current Transfer Ratio hFE
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
100
50
VCE = 5 V
160
120
80
40
0
0
1
50
100
150
Ambient Temperature Ta (°C)
Collector Output Capacitance Cob (pF)
Gain Bandwidth Product fT (GHz)
5
VCE = 5 V
4
3
2
1
0
2
5
10
20
Collector Current IC (mA)
50
Collector Output Capacitance vs.
Collector to Base Voltage
Gain Bandwidth Product vs.
Collector Current
1
2
5
10
20
Collector Current IC (mA)
50
1.2
IE = 0
f = 1 MHz
1.1
1.0
0.9
0.8
0.7
1
2
5
10
20
50
Collector to Base Voltage VCB (V)
3
2SC4197
Conversion Gain, Noise Figure
vs. Supply Voltage
Conversion Gain, Noise Figure
vs. Collector Current
25
25
20
Conversion Gain CG (dB)
Noise Figure NF (dB)
Conversion Gain CG (dB)
Noise Figure NF (dB)
IC = 0.8 mA
f = 900 MHz
CG
15
10
NF
5
VCC = 3 V
f = 900 MHz
15
NF
10
5
fout = 30 MHz
fosc = 930 MHz (–5 dBm)
fout = 30 MHz
fosc = 930 MHz (–5 dBm)
0
1
2
5
Supply Voltage VCC (V)
0
0.1
10
0.2
0.5
1.0
2
Collector Current IC (mA)
Conversion Gain, Noise Figure
vs. Collector Current
Conversion Gain CG (dB)
Noise Figure NF (dB)
25
VCC = 5 V
f = 900 MHz
CG
20
15
10
NF
5
fout = 30 MHz
fosc = 930 MHz (–5 dBm)
0
0.1
4
CG
20
0.2
0.5
1.0
2
Collector Current IC (mA)
5
5
2SC4197
S Parameters (Emitter Common)
Test Condition VCE = 5 V, 100 MHz to 1000 MHz (100 MHz Step), ZO = 50 Ω
IC = 5 mA
IC = 10 mA
S11-Frequency
0.8
1
S21-Frequency
90°
1.5
0.6
Scale : 4/div
120°
60°
2
0.4
3
150°
4
5
0.2
30°
10
0.2
0
0.4 0.6 0.8 1
1.5 2
3 45
10
∞
–180°
0°
–10
–5
–4
–0.2
–30°
–150°
–3
–0.4
–2
–0.6
–0.8
–1
–90°
S22-Frequency
S12-Frequency
90°
120°
–60°
–120°
–1.5
0.8
Scale : 0.04/div
1
0.6
60°
1.5
2
0.4
3
150°
30°
4
5
0.2
10
0.2
0° 0
–180°
0.4 0.6 0.8 1
1.5 2
3 45
10
∞
–10
–5
–4
–0.2
–30°
–150°
–3
–0.4
–2
–60°
–120°
–90°
–0.6
–0.8
–1
–1.5
5
2SC4197
S Parameters (Emitter Common)
Test Condition VCE = 5 V, IC = 5 mA, ZO = 50 Ω
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100
0.744
–48.4
13.142
145.9
0.034
67.5
0.876
–19.1
200
0.599
–85.5
9.669
123.5
0.053
55.9
0.702
–28.2
300
0.506
–110.7
7.201
109.5
0.064
52.6
0.586
–30.9
400
0.457
–128.9
5.696
100.6
0.072
52.7
0.520
–31.2
500
0.440
–143.5
4.687
93.9
0.079
54.3
0.480
–31.2
600
0.430
–155.1
3.977
88.1
0.087
57.1
0.452
–31.5
700
0.437
–163.2
3.453
83.5
0.095
59.4
0.432
–31.7
800
0.441
–170.9
3.070
79.1
0.104
61.3
0.417
–32.4
900
0.452
–177.1
2.746
75.4
0.113
63.6
0.402
–33.4
1000
0.462
177.5
2.508
71.9
0.122
65.6
0.390
–34.5
Test Condition VCE = 5 V, IC = 10 mA, ZO = 50 Ω
Freq.
S11
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100
0.585
–69.3
19.233
134.4
0.028
63.8
0.768
–25.6
200
0.460
–110.1
12.238
112.6
0.041
58.1
0.564
–31.4
300
0.408
–133.9
8.571
101.3
0.052
60.0
0.468
–30.5
400
0.390
–149.7
6.608
94.5
0.062
62.9
0.420
–29.1
500
0.390
–160.7
5.348
88.7
0.073
65.3
0.394
–28.1
600
0.391
–169.8
4.503
84.4
0.084
67.7
0.375
–27.8
700
0.404
–176.7
3.884
80.3
0.095
69.1
0.361
–27.7
800
0.411
178.0
3.446
76.8
0.107
70.3
0.350
–28.2
900
0.426
173.1
3.069
73.4
0.119
71.5
0.339
–29.0
1000
0.436
169.8
2.803
70.7
0.131
72.2
0.330
–29.7
6
S21
S12
S22
2SC4197
Y Parameters (Emitter Common)
Test Condition VCE = 5 V, IC = 5 mA
Freq.
Yie (mS)
Yfe (mS)
Yre (mS)
Yoe (mS)
(MHz)
REAL
IMAG.
REAL
IMAG.
REAL
IMAG.
REAL
IMAG.
100
2.663
5.357
161.804
–34.193
–0.002
–0.425
0.055
0.627
200
5.558
10.174
147.899
–63.499
–0.012
–0.880
0.025
1.270
300
9.651
13.450
125.634
–87.205
–0.041
–1.354
0.026
2.024
400
14.160
15.066
102.261
–102.289
–0.093
–1.820
0.044
2.772
500
18.753
15.624
80.041
–110.827
–0.150
–2.309
0.048
3.510
600
23.019
14.727
57.826
–114.923
–0.214
–2.798
0.124
4.301
700
26.444
13.908
40.437
–113.783
–0.263
–3.305
0.211
4.964
800
29.378
12.040
24.049
–111.316
–0.379
–3.822
0.268
5.828
900
31.931
9.960
10.602
–106.726
–0.466
–4.371
0.407
6.578
1000
33.671
7.667
–0.922
–101.485
–0.586
–4.913
0.524
7.381
Test Condition VCE = 5 V, IC = 10 mA
Freq.
Yie (mS)
Yfe (mS)
Yre (mS)
Yoe (mS)
(MHz)
REAL
IMAG.
REAL
IMAG.
REAL
IMAG.
REAL
IMAG.
100
5.212
6.660
273.909
–97.915
–0.002
–0.430
0.029
0.527
200
10.124
10.767
208.225
–154.453
–0.015
–0.876
0.011
1.307
300
15.094
11.730
141.558
–172.198
–0.044
–1.347
0.047
2.035
400
18.933
10.991
93.174
–169.490
–0.089
–1.817
0.064
2.735
500
21.811
10.074
58.181
–158.809
–0.133
–2.299
0.096
3.501
600
23.927
8.389
32.829
–146.284
–0.195
–2.785
0.173
4.226
700
25.848
7.170
15.188
–134.592
–0.276
–3.302
0.224
5.010
800
26.851
5.955
2.733
–123.322
–0.353
–3.808
0.282
5.760
900
28.097
4.633
–7.642
–113.209
–0.443
–4.375
0.394
6.551
1000
28.686
3.829
–13.979
–104.651
–0.523
–4.908
0.466
7.215
7
2SC4197
Conversion Gain and Noise Figure Test Circuit
VBB
1k
2.2 n
L1
VCC
2.2 n
2.2 n
,
,
,
,
,
,
,
,
,,,,,,,
fosc = 930 MHz
(–5 dBm)
VTin
L2
L4
220 µ
1k
fout = 30 MHz
100 p 100 p RL = 50 Ω
L5
D.U.T.
8p
D1
L3
2.2 n
47 p
100
D1
Unit R : Ω
C:F
L:H
47 k
2.2 n
fin = 900 MHz
,
,
,
,
,
,
,
,
,
,,,,,,, ,, ,,,,,
,,,,,,,,,,,,,,,,,,,
,, , ,, , ,
VTout
10
10
L1 : φ 1 mm Enameled Copper Wire.
, , ,,,,,
, ,,,,,,, ,,,,, ,
,, , ,
,
,
,,
,
25
D1 : 1 SV 188
10
L2 : φ 1 mm Enameled Copper Wire.
25
10
15
10
L3 : φ 1 mm Enameled Copper Wire.
10
30
Unit : mm
L4 : φ 0.5 mm Enameled Copper Wire 1 Turn Inside Dia 3 mm
L5 : Inside Dia 5 mm Bobin, φ 0.2 mm Enameled Copper Wire 20 Turns with Ferrite Core.
8
0.65
Unit: mm
0.95
0.95
1.9 ± 0.2
+ 0.10
0 – 0.1
2.8
+ 0.2
– 0.6
0.16 – 0.06
0.65
1.5 ± 0.15
0.10
3 – 0.4 +– 0.05
+ 0.2
1.1 – 0.1
0.3
2.95 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK
—
Conforms
0.011 g
Cautions
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copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
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