KSC2786 KSC2786 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz (TYP) • High Power Gain : GPE=22dB at f=100MHz TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 30 Units V VCEO VEBO Collector-Emitter Voltage 20 V Emitter-Base Voltage 4 V IC Collector Current 20 mA PC Collector Power Dissipation 250 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=10µA, IE=0 Min. 30 BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 20 BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 4 ICBO Collector Cut-off Current VCB=30V, IE=0 Typ. Max. Units V V V 0.1 µA 0.1 µA IEBO Emitter Cut-off Current VEB=4V, IC=0 hFE DC Current Gain VCE=6V, IC=1mA VBE (on) Base-Emitter On Voltage VCE=6V, IC=1mA 0.72 VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA 0.1 fT Current Gain Bandwidth Product VCE=6V, IC=1mA Cob Output Capacitance VCB=6V, IE=0, f=1MHz 1.2 Cc·rbb’ Collector-Base Time Constant VCE=6V, IC=1mA f=31.9MHz 12 15 ps NF Noise Figure VCE=6V, IC=1mA RS=50Ω, f=100MHz 3.0 5.0 dB GPE Power Gain VCE=6V, IC=1mA f=100MHz 40 400 18 240 V 0.3 600 V MHz pF 22 dB hFE Classification Classification R O Y hFE 40 ~ 80 70 ~ 140 120 ~ 240 ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2786 Typical Characteristics 20 IB = 110µA VCE = 6 V 10 IB = 100µA 16 IB = 90µA 14 IB = 80µA IB = 70µA 12 10 IB = 60µA 8 IB = 50µA IB = 40µA 6 IB = 30µA 4 IB = 20µA IC [mA], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT 18 1 IB = 10µA 2 0.1 0.0 0 0 2 4 6 8 10 12 14 16 18 1000 VCE = 6V hFE, DC CURRENT GAIN 0.6 0.8 1.0 1.2 Figure 2. Base-Emitter On Voltage 100 10 10 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT Figure 1. Static Characteristics 10000 VCE = 6V 1000 100 10 1 10 100 IC [mA], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT Figure 4. fT - IC Figure 3. DC Current Gain 10 10 IC = 10 IB Cob[pF], OUTPUT CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 0.4 VBE [V], BASE-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE 1 0.2 20 VBE(sat) 1 0.1 VCE(sat) 0.01 0.1 f = 1MHz IE = 0 1 0.1 1 10 IC [mA], COLLECTOR CURRENT Figure 5. Saturation Voltage ©2002 Fairchild Semiconductor Corporation 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 6. Output Capacitance Rev. A2, September 2002 KSC2786 Typical Characteristics (Continued) 100 1000 VCE = 6 V VCE = 6 V 10.7 MHz 100 MHz bie gie 0.1 0.01 0.1 0.0 0.1 gre [ms], CONDUCTANCE bre [ms], SUSCEPTANCE 10.7 MHz gie 1 gfe [ms], CONDUCTANCE bfe [ms], SUSCEPTANCE bie 1 10 100 MHz 100 100 MHz gfe 10.7 MHz -bfe gfe 10 -bfe 1 0.1 100 1 10 IC [mA], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT Figure 7. yie - f Figure 8. yfe - f -gre VCE = 6 V 100 MHz -bre VCE = 6 V 100 MHz boe 10.7 MHz 100 MHz 0.2 0.3 0.4 100 MHz -bre 100 1 10.7 MHz -gre goe [ms], CONDUCTANCE boe [ms], SUSCEPTANCE gie [ms], CONDUCTANCE bie [ms], SUSCEPTANCE 10 goe 10.7 MHz 0.1 10.7 MHz boe goe 0.5 0.1 1 10 0.01 0.1 100 IC [mA], COLLECTOR CURRENT 10 100 IC [mA], COLLECTOR CURRENT Figure 9. yre - f Figure 10. yoe - f 1000 1000 10.7 MHz VCE = 6 V VCE = 6 V 10.7 MHz 100 MHz gib gfb [ms], CONDUCTANCE bfb [ms], SUSCEPTANCE gib [ms], CONDUCTANCE bib [ms], SUSCEPTANCE 1 100 100 MHz gib 10.7 MHz -bib 10 -bib 1 0.1 1 10 100 100 MHz gfb 100 100 MHz gfb 10.7 MHz bfb 10 bfb 1 0.1 1 10 IC [mA], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT Figure 11. yib - f Figure 12. yfb - f ©2002 Fairchild Semiconductor Corporation 100 Rev. A2, September 2002 KSC2786 Typical Characteristics (Continued) 1 10 VCE = 6 V 100 MHz gre [ms], CONDUCTANCE bre [ms], SUSCEPTANCE grb [ms], CONDUCTANCE brb [ms], SUSCEPTANCE -brb VCE = 6 V IC = 1 mA 10.7 MHz -grb 0.1 10.7 MHz -brb 100 MHz 1 -bre 0.1 -gre -grb 0.01 0.1 0.01 1 10 100 10 100 Figure 13. yrb - f Figure 14. yre - f 1000 10 VCE = 1 V IC = 1 mA goe [ms], CONDUCTANCE boe [ms], SUSCEPTANCE VCE = 6 V IC = 1 mA gfe [ms], CONDUCTANCE bfe [ms], SUSCEPTANCE 1000 f [MHz], FREQUENCY IC [mA], COLLECTOR CURRENT 100 gfe 10 -bfe 1 10 100 1 boe 0.1 goe 0.01 1000 10 100 1000 f [MHz], FREQUENCY f [MHz], FREQUENCY Figure 15. yfe - f Figure 16. yoe - f 100 25 VCE = 6 V IC = 1 mA VCE = 6 V f = 100 MHz GPE gie [ms], CONDUCTANCE bie [ms], SUSCEPTANCE NF [dB], NOISE FIGURE GPE [dB], POWER GAIN 20 15 10 5 10 bie 1 gie NF 0.1 0 0.1 1 IC [mA], COLLECTOR CURRENT Figure 17. Power Gian & NF ©2002 Fairchild Semiconductor Corporation 10 10 100 1000 f [MHz], FREQUENCY Figure 18. yie - f Rev. A2, September 2002 KSC2786 Typical Characteristics (Continued) ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2786 Package Dimensions TO-92S 4.00 ±0.20 (1.10) 3.70 ±0.20 2.31 ±0.20 14.47 ±0.30 0.66 MAX. 0.49 ±0.10 1.27TYP [1.27±0.20] 1.27TYP [1.27±0.20] +0.10 0.35 –0.05 2.86 ±0.20 0.77 ±0.10 3.72 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1