LM6161/LM6261/LM6361 High Speed Operational Amplifier General Description Features The LM6161 family of high-speed amplifiers exhibits an excellent speed-power product in delivering 300 V/ms and 50 MHz unity gain stability with only 5 mA of supply current. Further power savings and application convenience are possible by taking advantage of the wide dynamic range in operating supply voltage which extends all the way down to a 5V. These amplifiers are built with National’s VIPTM (Vertically Integrated PNP) process which provides fast PNP transistors that are true complements to the already fast NPN devices. This advanced junction-isolated process delivers high speed performance without the need for complex and expensive dielectric isolation. Y Y Y Y Y Y Y Y Y High slew rate High unity gain freq Low supply current Fast settling Low differential gain Low differential phase Wide supply range Stable with unlimited capacitive load Well behaved; easy to apply 300 V/ms 50 MHz 5 mA 120 ns to 0.1% k 0.1% 0.1§ 4.75V to 32V Applications Y Y Y Y Y Video amplifier High-frequency filter Wide-bandwidth signal conditioning Radar Sonar Connection Diagrams 20-Lead LCC 10-Lead Flatpak TL/H/9057–13 See NS Package Number W10A TL/H/9057 – 14 See NS Package Number E20A TL/H/9057 – 5 Temperature Range NSC Drawing Commercial 0§ C s TA s a 70§ C Package b 25§ C s TA s a 85§ C LM6261N LM6361N 8-Pin Molded DIP N08E LM6361J 8-Pin Ceramic DIP J08A LM6361M 8-Pin Molded Surface Mt. M08A LM6161E/883 5962-89621012A 20-Lead LCC E20A LM6161W/883 5962-8962101HA 10-Pin Ceramic Flatpak W10A Military b 55§ C s TA s a 125§ C Industrial LM6161J/883 5962-8962101PA LM6261M See NS Package Number J08A, N08E or M08A VIPTM is a trademark of National Semiconductor Corporation. C1995 National Semiconductor Corporation TL/H/9057 RRD-B30M115/Printed in U. S. A. LM6161/LM6261/LM6361 High Speed Operational Amplifier September 1995 Absolute Maximum Ratings (Note 12) See AN-450 ‘‘Surface Mounting Methods and Their Effect on Product Reliability’’ for other methods of soldering surface mount devices. If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Supply Voltage (V a b Vb) Storage Temp Range 36V g 8V Differential Input Voltage (Note 8) Common-Mode Voltage Range (Note 10) (V a b 0.7V) to (Vb a 0.7V) Output Short Circuit to GND (Note 1) Continuous Soldering Information Dual-In-Line Package (N, J) Soldering (10 sec.) 260§ C Small Outline Package (M) Vapor Phase (60 sec.) 215§ C Infrared (15 sec.) 220§ C b 65§ C to a 150§ C Max Junction Temperature ESD Tolerance (Notes 6 and 7) 150§ C g 700V Operating Ratings (Note 12) Temperature Range (Note 2) LM6161 LM6261 LM6361 b 55§ C s TJ s a 125§ C b 25§ C s TJ s a 85§ C 0§ C s TJ s a 70§ C Supply Voltage Range 4.75V to 32V DC Electrical Characteristics The following specifications apply for Supply Voltage e g 15V, VCM e 0, RL t 100 kX and RS e 50X unless otherwise noted. Boldface limits apply for TJ e TMIN to TMAX; all other limits TJ e 25§ C. Symbol Parameter Conditions Typ VOS Input Offset Voltage VOS Drift Input Offset Voltage Average Drift Ib Input Bias Current IOS Input Offset Current IOS Drift Input Offset Current Average Drift RIN Input Resistance Differential CIN Input Capacitance AV e a 1 AVOL Large Signal Voltage Gain VOUT e g 10V, RL e 2 kX (Note 9) 750 RL e 10 kX (Note 9) 2900 VCM Input Common-Mode Voltage Range 5 LM6161 LM6261 LM6361 Limit (Notes 3, 11) Limit (Note 3) Limit (Note 3) Units 7 10 7 9 20 22 mV Max 10 @ 10 MHz Supply e a 5V (Note 4) Common-Mode Rejection Ratio b 10V s VCM s a 10V PSRR Power Supply Rejection Ratio g 10V s V g s g 16V VO Output Voltage Swing Supply e g 15V and RL e 2 kX 2 3 6 3 5 5 6 mA Max 150 350 800 350 600 1500 1900 nA Max 0.4 nA/§ C 325 kX 1.5 Supply e g 15V CMRR mV/§ C 550 400 400 350 V/V Min a 14.0 a 13.9 a 13.8 a 13.9 a 13.8 a 13.8 a 13.7 Volts Min b 13.2 b 12.9 b 12.7 b 12.9 b 12.7 b 12.8 b 12.7 Volts Min 4.0 3.9 3.8 3.9 3.8 3.8 3.7 Volts Min 1.8 2.0 2.2 2.0 2.2 2.1 2.2 Volts Max 94 80 74 80 76 72 70 dB Min 90 80 74 80 76 72 70 dB Min a 14.2 a 13.5 a 13.3 a 13.5 a 13.3 a 13.4 a 13.3 Volts Min b 13.0 b 12.7 b 13.0 b 12.8 b 12.9 b 12.8 Volts Min b 13.4 2 pF 550 300 V/V DC Electrical Characteristics (Continued) The following specifications apply for Supply Voltage e g 15V, VCM e 0, RL t 100 kX and RS e 50X unless otherwise noted. Boldface limits apply for TJ e TMIN to TMAX; all other limits TJ e 25§ C. Symbol Parameter Conditions VO (Continued) Output Voltage Swing (Continued) Supply e a 5V and RL e 2 kX (Note 4) Output Short Circuit Current Source Sink IS LM6161 LM6261 LM6361 Limit (Notes 3, 11) Limit (Note 3) Limit (Note 3) Units 4.2 3.5 3.3 3.5 3.3 3.4 3.3 Volts Min 1.3 1.7 2.0 1.7 1.9 1.8 1.9 Volts Max 65 30 20 30 25 30 25 mA Min 65 30 20 30 25 30 25 mA Min 5.0 6.5 6.8 6.5 6.7 6.8 6.9 mA Max Typ Supply Current AC Electrical Characteristics The following specifications apply for Supply Voltage e g 15V, VCM e 0, RL t 100 kX and RS e 50X unless otherwise noted. Boldface limits apply for TJ e TMIN to TMAX; all other limits TJ e 25§ C. Symbol Parameter GBW Gain-Bandwidth Product SR Slew Rate PBW Power Bandwidth tS Settling Time Conditions @ Typ f e 20 MHz 50 LM6161 LM6261 LM6361 Limit (Notes 3, 11) Limit (Note 3) Limit (Note 3) Units 40 30 40 35 35 32 MHz Min 200 180 200 180 200 180 V/ms Min Supply e g 5V 35 AV e a 1 (Note 8) 300 MHz Supply e g 5V (Note 8) 200 V/ms VOUT e 20 VPP 4.5 MHz 10V Step to 0.1% AV e b1, RL e 2 kX 120 ns 45 Deg wm Phase Margin AD Differential Gain NTSC, AV e a 4 k 0.1 % wD Differential Phase NTSC, AV e a 4 0.1 Deg enp-p Input Noise Voltage f e 10 kHz 15 nV/0Hz inp-p Input Noise Current f e 10 kHz 1.5 pA/0Hz Note 1: Continuous short-circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150§ C. Note 2: The typical junction-to-ambient thermal resistance of the molded plastic DIP (N) is 105§ C/W, the molded plastic SO (M) package is 155§ C/W, and the cerdip (J) package is 125§ C/W. All numbers apply for packages soldered directly into a printed circuit board. Note 3: Limits are guaranteed by testing or correlation. Note 4: For single supply operation, the following conditions apply: V a e 5V, Vb e 0V, VCM e 2.5V, VOUT e 2.5V. Pin 1 & Pin 8 (Vos Adjust) are each connected to Pin 4 (Vb) to realize maximum output swing. This connection will degrade VOS, VOS Drift, and Input Voltage Noise. Note 5: CL s 5 pF. Note 6: In order to achieve optimum AC performance, the input stage was designed without protective clamps. Exceeding the maximum differential input voltage results in reverse breakdown of the base-emitter junction of one of the input transistors and probable degradation of the input parameters (especially Vos, Ios, and Noise). Note 7: The average voltage that the weakest pin combinations (those involving Pin 2 or Pin 3) can withstand and still conform to the datasheet limits. The test circuit used consists of the human body model of 100 pF in series with 1500X. Note 8: VIN e 8V step. For supply e g 5V, VIN e 5V step. Note 9: Voltage Gain is the total output swing (20V) divided by the input signal required to produce that swing. Note 10: The voltage between V a and either input pin must not exceed 36V. Note 11: A military RETS electrical test specification is available on request. At the time of printing, the RETS6161X specs complied with all Boldface limits in this column. Note 12: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. 3 Typical Performance Characteristics (RL e 10 kX, TA e 25§ C unless otherwise specified) Supply Current vs Supply Voltage Common-Mode Rejection Ratio Power Supply Rejection Ratio Gain-Bandwidth Product Propagation Delay Rise and Fall Times Gain-Bandwidth Product vs Load Capacitance Slew Rate vs Load Capacitance Overshoot vs Capacitive Load Slew Rate Voltage Gain vs Load Resistance Gain vs Supply Voltage TL/H/9057 – 6 4 Typical Performance Characteristics (RL e 10 kX, TA e 25§ C unless otherwise specified) (Continued) Differential Gain (Note) Differential Phase (Note) TL/H/9057 – 8 Note: Differential gain and differential phase measured for four series LM6361 op amps configured as unity-gain followers, in series with an LM6321 buffer. Error added by LM6321 is negligible. Test performed using Tektronix Type 520 NTSC test system. TL/H/9057 – 7 Input (2V/div) Output (2V/div) Step Response; Av e a 1 (50 ns/div) Input Noise Voltage Input Noise Current TL/H/9057 – 1 Power Bandwidth TL/H/9057 – 9 5 Typical Performance Characteristics (RL e 10 kX, TA e 25§ C unless otherwise specified) (Continued) Open-Loop Frequency Response Open-Loop Frequency Response Output Impedence (Open-Loop) Common-Mode Input Saturation Voltage Output Saturation Voltage Bias Current vs Common-Mode Voltage TL/H/9057 – 12 Simplified Schematic TL/H/9057 – 3 6 Applications Tips however, improve the stability and transient response and is recommended for every design. 0.01 mF to 0.1 mF ceramic capacitors should be used (from each supply ‘‘rail’’ to ground); if the device is far away from its power supply source, an additional 2.2 mF to 10 mF of tantalum may provide extra noise reduction. Keep all leads short to reduce stray capacitance and lead inductance, and make sure ground paths are low-impedance, especially where heavier currents will be flowing. Stray capacitance in the circuit layout can cause signal coupling across adjacent nodes and can cause gain to unintentionally vary with frequency. Breadboarded circuits will work best if they are built using generic PC boards with a good ground plane. If the op amps are used with sockets, as opposed to being soldered into the circuit, the additional input capacitance may degrade circuit performance. The LM6361 has been compensated for unity-gain operation. Since this compensation involved adding emitter-degeneration resistors to the op amp’s input stage, the openloop gain was reduced as the stability increased. Gain error due to reduced AVOL is most apparent at high gains; thus, for gains between 5 and 25, the less-compensated LM6364 should be used, and the uncompensated LM6365 is appropriate for gains of 25 or more. The LM6361, LM6364, and LM6365 have the same high slew rate, regardless of their compensation. The LM6361 is unusually tolerant of capacitive loads. Most op amps tend to oscillate when their load capacitance is greater than about 200 pF (especially in low-gain circuits). The LM6361’s compensation is effectively increased with load capacitance, reducing its bandwidth and increasing its stability. Power supply bypassing is not as critical for the LM6361 as it is for other op amps in its speed class. Bypassing will, Typical Applications Offset Voltage Adjustment 1 MHz Low-Pass Filter TL/H/9057–4 TL/H/9057 – 10 ² 1% tolerance *Matching determines filter precision fc e (2q 0(R1 R2 C1 C2))b1 Modulator with Differential-to-Single-Ended Converter TL/H/9057 – 11 7 Physical Dimensions inches (millimeters) 20-Lead Small Outline Package (E) Order Number LM6161E/883 NS Package Number E20A Ceramic Dual-In-Line Package (J) Order Number LM6161J/883 NS Package Number J08A 8 Physical Dimensions inches (millimeters) (Continued) Molded Package SO (M) Order Number LM6261M or LM6361M NS Package Number M08A Molded Dual-In-Line Package (N) Order Number LM6261N or LM6361N NS Package Number N08E 9 LM6161/LM6261/LM6361 High Speed Operational Amplifier Physical Dimensions inches (millimeters) (Continued) 10-Pin Ceramic Flatpak Order Number LM6161W/883 NS Package Number W10A LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. National Semiconductor Corporation 1111 West Bardin Road Arlington, TX 76017 Tel: 1(800) 272-9959 Fax: 1(800) 737-7018 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 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