LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE zApplictions LRB521S-40T1G Low current rectification and high speed switching zFeatures 1 Extremelysmall surface mounting type. (SOD523) IO=200mA guaranteed despite the size. Low VF. 2 z Construction SOD-523 Silicon epitaxial planar z We declare that the material of product compliance with RoHS requirements. Ordering Information Device Marking 2 Anode 1 Cathode Shipping LRB521S-40T1G S 3000/Tape&Reel LRB521S-40T3G S 10000/Tape&Reel MAXIMUM RATINGS (TA = 25°C) Parameter DC reverse voltage Mean rectifying current Peak forward surge current* Junction temperature Storage temperature Symbol VR IO IFSM Tj Tstg Limits 40 200 4 125 -55~+125 Unit V mA A °C °C *60Hz for 1 ELECTRICAL CHARACTERISTICS(TA = 25°C) Parameter Forward voltage Symbol VF 0.16 Max. 0.30 V Conditions I F=10mA Forward voltage VF 0.31 0.45 V I F=100mA Forward voltage VF 0.37 0.52 V IF=200mA Reverse current IR - 20 µΑ VR=10V IR - 90 µΑ VR=40V ESD 8 - K V C=100pF,R=1.5K Ω forward and reverse:1 time Reverse current ESD break down voltage Min. Unit Rev.O 1/4 LESHAN RADIO COMPANY, LTD. LRB521S-40T1G zElectrical characteristic curves Ta=150℃ Ta=-25℃ 10 Ta=25℃ Ta=125℃ 1000 Ta=75℃ 100 10 Ta=25℃ 10 1 Ta=-25℃ 0.1 0.01 1 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 600 10 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1 30 0 510 500 490 AVE:495.2mV 480 80 70 60 50 40 30 AVE:6.86uA 20 Ta=25℃ f=1MHz VR=0V n=10pcs 29 10 28 27 26 AVE:27.2pF 25 24 23 22 21 0 20 VF DISPERSION MAP Ct DISPERSION MAP IR DISPERSION MAP 20 10 Ifsm 15 8.3ms 10 5 AVE:5.60A 10 PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 8.3ms 8.3ms 1cyc 5 0 0 1 10 Ifsm t 5 0 100 1 1000 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISPERSION MAP 0.3 5 Rth(j-a) D=1/2 FORWARD POWER DISSIPATION:Pf(W) 0.25 Rth(j-c) 100 Mounted on epoxy board IM=1mA 1ms IF=20mA time 0.1 10 TIME:(s) Rth-t CHARACTERISTICS 0.2 DC Sin(θ＝180) 0.15 0.1 1000 3 D=1/2 2 Sin(θ＝180) DC 1 0.05 300us 10 0.001 4 REVERSE POWER DISSIPATIONPR (w) PEAK SURGE FORWARD CURRENT:IFSM(A) 30 30 Ta=25℃ VR=40V n=30pcs 90 REVERSE CURRENT:VR(uA) Ta=25℃ IF=200mA n=30pcs 470 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 100 520 FORWARD VOLTAGE:VF(mV) f=1MHz 10000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ 100 Ta=150℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD CURRENT:IF(mA) Ta=75℃ 100 REVERSE CURRENT:IR(uA) 100000 1000 0 0 0 0.1 0.2 0.3 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pｆ CHARACTERISTICS 0.4 0 10 20 30 REVERSE VOLTAGE：VR(V) VR-PR CHARACTERISTICS 40 Rev.O 2/4 LESHAN RADIO COMPANY, LTD. LRB521S-40T1G 0A 0V 0.4 DC t T 0.3 Sin(θ＝180) 0.2 0.5 Io VR D=t/T VR=20V Tj=150℃ 0.1 D=1/2 0 AVERAGE RECTIFIED FORWARD CURRENT Io(A) AVERAGE RECTIFIED FORWARD CURRENT Io(A) 0.5 0A 0V 0.4 Io t DC T VR D=t/T VR=20V Tj=150℃ 0.3 D=1/2 0.2 0.1 Sin(θ＝180) 0 0 25 50 75 100 125 AMBIENT TEMPERATURE：Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE：Tc(℃) Derating Curveﾞ(Io-Tc) Rev.O 3/4 LESHAN RADIO COMPANY, LTD. LRB521S-40T1G SOD-523 −X− D −Y− E 2X b 0.08 1 M 2 X Y TOP VIEW A c NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A b c D E HE L L2 MILLIMETERS MIN NOM MAX 0.50 0.60 0.70 0.25 0.30 0.35 0.07 0.14 0.20 1.10 1.20 1.30 0.70 0.80 0.90 1.50 1.60 1.70 0.30 REF 0.15 0.20 0.25 HE SIDE VIEW RECOMMENDED SOLDERING FOOTPRINT* 2X 0.48 PACKAGE OUTLINE 1.80 2X 0.40 DIMENSION: MILLIMETERS Rev.O 4/4