LRB520G-30T1 G

LESHAN RADIO COMPANY, LTD.
Schottky barrier diode
P b - free pack age is available
LRB520G-30T1 G
S-LRB520G-30T1 G
zApplications
Low current rectification
1
zFeatures
1) Ultra Small mold type.
2) Low IR.
3) High reliability.
4) S- Prefix for Automotive
.
and O ther Applications Req uiring
Uniq ue Site and Control Change Req uirements;
AE C-Q 101 Q ualified and PPAP Capable.
2
SOD-723
zConstruction
Silicon epitaxial
planar
epit
zD evice M ark ing
Device
Marking
LRB520G-30T1G
S-LRB520G-30T1G
Shipping
4000/Tape&Reel
E
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage(DC)
Average rectified forward current
Forward current surge peak (60Hz・1cyc)
Junction temperature
Storage temperature
Limits
30
100
500
125
-40 to +125
Symbol
VR
Io
IFSM
Tj
Tstg
Unit
V
mA
mA
℃
℃
zElectrical characteristics (Ta=25°C)
Param eter
Sym bol
Min.
Typ.
Max.
Unit
Forward voltage
VF
-
-
0.45
V
Conditions
IF =10m A
Revers e current
IR
-
-
0.5
µA
VR =10V
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
LRB520G-30T1 G , S-LRB520G-30T1 G
Electrical characteristic curves (Ta=25°C)
1000000
1
Ta=-25℃
Ta=25℃
0.1
0.01
100000
Ta=75℃
10000
1000
Ta=25℃
100
Ta=-25℃
10
1
0.001
100
200
300
400
500
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
30
0
340
330
800
19
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
350
700
600
500
400
300
AVE:100.5nA
200
17
16
15
14
13
12
11
0
10
VF DISPERSION MAP
AVE:15.94pF
Ct DISPERSION MAP
IR DISPERSION MAP
10
10
PEAK SURGE
FORWARD CURRENT:IFSM(A)
20
1cyc
Ifsm
15
8.3ms
10
AVE:3.90A
5
0
Ifsm
8.3ms 8.3ms
1cyc
5
Ifsm
t
5
0
0
1
10
1
100
IFSM DISRESION MAP
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
0.1
1000
20
Ta=25℃
f=1MHz
VR=0V
n=10pcs
18
100
320
5
10
15
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
20
Ta=25℃
VR=10V
n=30pcs
900
REVERSE CURRENT:IR(nA)
0.02
Rth(j-a)
Rth(j-c)
100
Mounted on epoxy board
IF=100mA
IM=10mA
1m
FORWARD POWER
DISSIPATION:Pf(W)
0.08
DC
REVERSE POWER
DISSIPATION:PR (W)
FORWARD VOLTAGE:VF(mV)
20
1000
Ta=25℃
IF=10mA
n=30pcs
AVE:338.8mV
PEAK SURGE
FORWARD CURRENT:IFSM(A)
10
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
370
360
10
1
0
600
PEAK SURGE
FORWARD CURRENT:IFSM(A)
0
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=75℃
10
100
Ta=125℃
f=1MHz
Ta=125℃
100
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(mA)
1000
D=1/2
0.06
Sin(θ=180)
0.04
0.02
time
0.015
0.01
DC
0.005
D=1/2
Sin(θ=180)
300u
10
0.001
0
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0
0
0.05
0.1
0.15
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
0.2
0
5
10
15
20
25
30
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
Rev.O 2/4
LESHAN RADIO COMPANY, LTD.
LRB520G-30T1 G , S-LRB520G-30T1 G
0.3
0A
0V
0.2
DC
Io
t
T
VR
D=t/T
VR=15V
Tj=125℃
D=1/2
0.1
Sin(θ=180)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0.3
0A
0V
0.2
Io
t
DC
T
VR
D=t/T
VR=15V
Tj=125℃
D=1/2
0.1
Sin(θ=180)
0
0
0
25
50
75
100
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve゙(Io-Ta)
125
0
25
50
75
100
125
CASE TEMPARATURE:Tc(℃)
Derating Curve゙(Io-Tc)
Rev.O 3/4
LESHAN RADIO COMPANY, LTD.
LRB520G-30T1 G , S-LRB520G-30T1 G
SOD−723
D
−X−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
−Y−
E
b
2X
0.08 (0.0032) X Y
DIM
A
b
c
D
E
HE
L
A
c
L
MILLIMETERS
INCHES
MIN
NOM MAX MIN
NOM MAX
0.49
0.52
0.55
0.019 0.020 0.022
0.25
0.28
0.32 0.0098 0.011 0.013
0.08
0.12
0.15 0.0032 0.0047 0.0059
0.95
1.00
1.05
0.037 0.039 0.041
0.55
0.60
0.65
0.022 0.024 0.026
1.35
1.40
1.45
0.053 0.055 0.057
0.15
0.20
0.25
0.006 0.0079 0.010
HE
SOLDERING FOOTPRINT*
1.1
0.043
0.45
0.0177
0.50
0.0197
SCALE 10:1
mm Ǔ
ǒinches
Rev.O 4/4