LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB521G-30T1G 1 zApplication Rectifying small power 2 zFeatures 1) Ultra small mold type. 2) Low VF 3) High reliability SOD - 723 zConstruction Silicon epitaxial planer 1 CATHODE 2 ANODE z We declare that the material of product compliance with RoHS requirements. z We declare that the material of product is Halogen Free (Green Epoxy Compound). zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (DC) Average rectified forward current Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature zElectrical characteristics (Ta=25°C) Parameter Symbol Symbol VR Io IFSM Tj Tstg Limits 30 100 500 125 -40 to +125 Forward voltage VF Min. - Typ. - Max. 0.35 Unit V Reverse current IR - - 10 µA Unit V mA mA ℃ ℃ Conditions IF=10mA VR=10V zO rdering I nformation Device LRB521G-30T1G Marking F Shipping 4000/Tape&Reel Rev.O 1/4 LESHAN RADIO COMPANY, LTD. LRB521G-30T1G Electrical characteristic curves (Ta=25°C) Ta=-25℃ 1 Ta=25℃ 0.1 0.01 0.001 Ta=75℃ 100 Ta=25℃ 10 1 Ta=-25℃ 0.1 0.01 0 100 200 300 400 500 600 10 Ta=25℃ IF=10mA n=30pcs 0 290 280 270 260 15 10 AVE:2.017uA 5 AVE:3.90A 5 0 Ifsm 8.3ms 8.3ms 1cyc 5 10 t 5 1 Mounted on epoxy board IF=100mA DC 0.06 Sin(θ＝180) 0.04 300us TIME:t(s) Rth-t CHARACTERISTICS D=1/2 0.04 DC Sin(θ＝180) 0 0 1000 0.06 0.02 0.02 time 100 0.08 D=1/2 REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) Rth(j-c) 10 TIME:t(ms) IFSM-t CHARACTERISTICS 0.1 0.08 10 AVE:17.34pF Ifsm 100 0.1 Rth(j-a) 0.1 12 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISRESION MAP 10 0.001 13 0 1 1ms 14 10 0 IM=10mA 15 Ct DISPERSION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) 10 PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 100 16 IR DISPERSION MAP 10 1000 17 10 VF DISPERSION MAP 1cyc 20 Ta=25℃ f=1MHz VR=0V n=10pcs 18 11 0 Ifsm 15 19 AVE:270.2mV 15 10 20 20 20 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS Ta=25℃ VR=10V n=30pcs 25 REVERSE CURRENT:IR(uA) FORWARD VOLTAGE:VF(mV) 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 250 PEAK SURGE FORWARD CURRENT:IFSM(A) 20 30 300 10 1 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) f=1MHｚ 1000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75℃ Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 Ta=125℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) 100 100 10000 1000 0 0.1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.2 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Rev.O 2/4 LESHAN RADIO COMPANY, LTD. LRB521G-30T1G 0.3 0A 0V 0.2 DC Io t T VR D=t/T VR=15V Tj=125℃ D=1/2 0.1 Sin(θ＝180) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.3 0A 0V 0.2 Io t DC T VR D=t/T VR=15V Tj=125℃ D=1/2 0.1 Sin(θ＝180) 0 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Rev.O 3/4 LESHAN RADIO COMPANY, LTD. LRB521G-30T1G SOD−723 D −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. −Y− E b 2X 0.08 (0.0032) X Y DIM A b c D E HE L A c L MILLIMETERS INCHES MIN NOM MAX MIN NOM MAX 0.49 0.52 0.55 0.019 0.020 0.022 0.25 0.28 0.32 0.0098 0.011 0.013 0.08 0.12 0.15 0.0032 0.0047 0.0059 0.95 1.00 1.05 0.037 0.039 0.041 0.55 0.60 0.65 0.022 0.024 0.026 1.35 1.40 1.45 0.053 0.055 0.057 0.15 0.20 0.25 0.006 0.0079 0.010 HE SOLDERING FOOTPRINT* 1.1 0.043 0.45 0.0177 0.50 0.0197 SCALE 10:1 mm Ǔ ǒinches Rev.O 4/4