Hall Device
LT120A
LT120A
Hall Voltage 160mV GaAs Hall Device
■ Features
¡Small temperature coefficient of the Hall voltage
¡Good linearity of the Hall voltage
¡Small imbalanced voltage
¡Directly DC voltage applicable
■ Outline Dimensions
(Unit : mm)
N
3
0.4
0.4
2
(0.95)
¡Brushless motors
VCR, CD, CD-ROM, FDD
¡Measuring equipment
Gauss meters, magnetic substance detectors
¡Noncontact sensors
Microswitches, tape-end detection
¡Other magnetic detection
4-R0.2
1.5±0.2
0.6
Unit
V
mA
mW
˚C
˚C
˚C
0.8
Symbol
Rating
VC
12
IC
15
PD
150
Topr
-20 to +125
Tstg
-55 to +150
Tsol
260
Terminal connection
1:VC Input
2:VH Output
3:VC Input
4:VH Output
(0to0.15)
Parameter
Control voltage
Control current
Power dissipation
Operating temperature
Storage temperature
Soldering temperature* 1
(Ta=25˚C)
1.1 +0.2
-0.1
0.3
0.6
0.16+0.10
-0.06
■ Absolute Maximum Ratings
2.9±0.2
2.9±0.2
1.9
■ Applications
4
(0.85)
1
0.6
0.4
2.7±0.3
As for dimensions of tape-packaged products, refer to page 44 .
*1 Soldering time : 10 seconds
■ Electrical Characteristics
Parameter
No-load Hall voltage *1
Imbalanced ratio
*2
Rank A
Rank B
Rank C
(Ta=25˚C)
Symbol
VH
Conditions
VC=6V, B=100mT
VHO/VH
VC=6V, (B=0)/(100mT)
Input resistance
Output resistance
RIN
ROUT
Drift of imbalanced voltage vs. temperature
|∆VHO|
Temperature coefficient of Hall voltage
Temperature coefficient of input resistance
Linearity of Hall voltage
β
α
γ
IM=1mA, B=0mT
IM=1mA, B=0mT
VC=6V, B=0mT, Ta=-20˚C to 25˚C
VC=6V, B=0mT, Ta=25˚C to 125˚C
IC=6mA, B=100mT, T1=-20˚C, T2=125˚C
IM=1mA, B=0mT, T1=-20˚C, T2=125˚C
IC=6mA, B1=50mT, B2=100mT
MIN.
145
2
-5
-2
650
1 300
TYP.
160
800
1 600
MAX.
175
12
5
-12
950
1 900
Unit
mV
-
5
-
mV
-
-0.04
0.2
0.3
-
%/˚C
%/˚C
%
%
Ω
Ω
*1 No-load Hall voltage is nearly proportional to Vc (within the range of 1 to 6V) at temperatures of -20˚C to + 125˚C.
Keep the voltage within the allowable power dissipation range.
*2 Imbalanced ratio is in +/-12% within the range of Vc=1 to 6V.
VH=VM-VHO
1
{VH(T2)-VH(T1)}
β=
X100
X
VH(T1)
(T2-T1)
{RIN(T2)-RIN(T1)}
1
X
X100
α=
(T2-T1)
RIN(T1)
{KH(B2)-KH(B1)}
VH
X2X100, KH=
γ=
(ICXB)
{KH(B1)+KH(B2)}
VM:Observed Hall voltage
VHO:Imbalanced voltage
KH:Sensitivity
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices
shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device spcification sheets before using any SHARP device.
Hall Device
Hall Voltage vs. Ambient
Temperature
Hall voltage VH (mV)
200
VC=6V
IC=6mA
120
80
40
0
-20
1 200
800
400
0
-20
Fig. 4
1 600
1 200
800
240
160
80
Hall Voltage vs. Control Voltage
400
B=100mT
Ta=25˚C
320
240
160
80
0
0
0
200
400
600
800 1 000
Magnetic flux density B (mT)
4
8
12
Control voltage VC (V)
Fig. 6
0
4
8
12
Control current IC (mA)
Power Dissipation vs. Ambient
Temperature
200
Power dissipation PD (mW)
0
Fig. 5
Hall voltage VH (mV)
B=100mT
Ta=25˚C
320
400
0
0
40
80
120
Ambient temperature Ta (˚C)
Hall Voltage vs. Control Current
400
VC=6V
Ta=25˚C
Hall voltage VH (mV)
Hall voltage VH (mV)
2 000
B=0mT
IM=1mA
1 600
0
40
80
120
Ambient temperature Ta (˚C)
Hall Voltage vs. Magnetic Flux
Density
Input Resistance vs. Ambient
Temperature
2 000
B=100mT
160
Fig. 3
Fig. 2
Input resistance RIN (Ω)
Fig. 1
LT120A
160
120
80
40
0
0
40
80
120
160
Ambient temperature Ta (˚C)
200