M48T212Y M48T212V 5V/3.3V TIMEKEEPER CONTROLLER ■ CONVERTS LOW POWER SRAM into NVRAMs ■ YEAR 2000 COMPLIANT (4-Digit Year) ■ BATTERY LOW FLAG ■ INTEGRATED REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL ■ AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION ■ WATCHDOG TIMER ■ CHOICE of WRITE PROTECT VOLTAGES (VPFD = Power-fail Deselect Voltage): SNAPHAT (SH) Battery 44 1 SOH44 (MH) – M48T212Y: 4.2V ≤ VPFD ≤ 4.5V – M48T212V: 2.7V ≤ VPFD ≤ 3.0V ■ MICROPROCESSOR POWER-ON RESET ■ PROGRAMMABLE ALARM OUTPUT ACTIVE in the BATTERY BACKED-UP MODE ■ PACKAGING INCLUDES a 44-LEAD SOIC and SNAPHAT TOP (to be Ordered Separately) DESCRIPTION The M48T212Y/V are self-contained devices that include a real time clock (RTC), programmable alarms, a watchdog timer, and two external chip enable outputs which provide control of up to four (two in parallel) external low-power static RAMs. Access to all TIMEKEEPER functions and the external RAM is the same as conventional bytewide SRAM. The 16 TIMEKEEPER Registers offer Century, Year, Month, Date, Day, Hour, Minute, Second, Calibration, Alarm, Watchdog, and Flags. Externally attached static RAMs are controlled by the M48T212Y/V via the E1CON and E2CON signals (see Table 4). The 44 pin 330mil SOIC provides sockets with gold plated contacts at both ends for direct connection to a separate SNAPHAT housing containing the battery and crystal. The unique design allows the SNAPHAT battery package to be mounted on top of the SOIC package after the completion of the surface mount process. Figure 1. Logic Diagram VCC VCCSW 4 8 A0-A3 DQ0-DQ7 A E IRQ/FT EX W RST M48T212Y M48T212V G E1CON E2CON WDI RSTIN1 VOUT RSTIN2 VSS AI03019 April 2000 1/23 M48T212Y, M48T212V Figure 2. SOIC Connections RSTIN1 RSTIN2 RST NC NC NC NC NC A NC NC NC A3 A2 A1 A0 WDI E2CON DQ0 DQ1 DQ2 VSS 1 44 2 43 3 42 4 41 5 40 6 39 7 38 8 37 9 36 10 35 M48T212Y 11 M48T212V 34 12 33 13 32 14 31 15 30 16 29 17 28 18 27 19 26 20 25 24 21 23 22 Table 1. Signal Names VCC VOUT VCCSW IRQ/FT EX NC NC NC NC NC G W NC NC E E1CON DQ7 DQ6 DQ5 DQ4 DQ3 NC AI03020 Insertion of the SNAPHAT housing after reflow prevents potential battery and crystal damage due to the high temperatures required for device surface-mounting. The SNAPHAT housing is keyed to prevent reverse insertion. The SOIC and battery/crystal packages are shipped separately in plastic anti-static tubes or in Tape & Reel form. For the 44 lead SOIC, the battery/crystal package (i.e. SNAPHAT) part number is ”M4TXX-BR12SH” (see Table 15). Caution: Do not place the SNAPHAT battery/crystal top in conductive foam, as this will drain the lithium button-cell battery. Automatic backup and write protection for an external SRAM is provided through VOUT, E1CON and E2CON pins. (Users are urged to insure that voltage specifications, for both the controller chip and external SRAM chosen, are similar). The SNAPHAT containing the lithium energy source used to permanently power the real time clock is also used to retain RAM data in the absence of VCC power through the VOUT pin. The chip enable outputs to RAM (E1CON and E2CON) are controlled during power transients to prevent data corruption. The date is automatically 2/23 A0-A3 Address Inputs DQ0-DQ7 Data Inputs/Outputs RSTIN1 Reset 1 Input RSTIN2 Reset 2 Input RST Reset Output (Open Drain) WDI Watchdog Input A Bank Select Input E Chip Enable Input EX External Chip Enable Input G Output Enable Input W Write Enable Input E1 CON RAM Chip Enable 1 Output E2 CON RAM Chip Enable 2 Output IRQ/FT Int/Freq Test Output (Open Drain) Vccsw VCC Switch Output VOUT Supply Voltage Output VCC Supply Voltage VSS Ground NC Not Connected internally adjusted for months with less than 31 days and corrects for leap years. The internal watchdog timer provides programmable alarm windows. The nine clock bytes (Fh - 9h and 1h) are not the actual clock counters, they are memory locations consisting of BiPORTTM read/write memory cells within the static RAM array. Clock circuitry updates the clock bytes with current information once per second. The information can be accessed by the user in the same manner as any other location in the static memory array. Byte 8h is the clock control register. This byte controls user access to the clock information and also stores the clock calibration setting. Byte 7h contains the watchdog timer setting. The watchdog timer can generate either a reset or an interrupt, depending on the state of the Watchdog Steering bit (WDS). Bytes 6h-2h include bits that, when programmed, provide for clock alarm functionality. Alarms are activated when the register content matches the month, date, hours, minutes, and seconds of the clock registers. Byte 1h contains century information. Byte 0h contains additional flag information pertaining to the watchdog timer, alarm and battery status. M48T212Y, M48T212V Table 2. Absolute Maximum Ratings (1) Symbol TA TSTG TSLD (2) VIO VCC Parameter Value Unit 0 to 70 °C –40 to 85 –55 to 125 °C 260 °C –0.3 to VCC +0.3 V –0.3 to 7 –0.3 to 4.6 V Ambient Operating Temperature Storage Temperature (VCC Off, Oscillator Off) SNAPHAT SOIC Lead Solder Temperature for 10 sec Input or Output Voltages Supply Voltage M48T212Y M48T212V IO Output Current 20 mA PD Power Dissipation 1 W Note: 1. Stresses greater than those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to the absolute maximum rating conditions for extended periods of time may affect reliability. 2. Soldering temperature not to exceed 260°C for 10 seconds (total thermal budget not to exceed 150°C for longer than 30 seconds). CAUTION: Negative undershoots below –0.3V are not allowed on any pin while in the Battery Back-up mode. CAUTION: Do NOT wave solder SOIC to avoid damaging SNAPH AT sockets. Table 3. Operating Modes (1) Mode VCC Deselect Write Read 4.5V to 5.5V or 3.0V to 3.6V Read E G W DQ7-DQ0 Power V IH X X High-Z Standby VIL X VIL D IN Active VIL VIL VIH DOUT Active VIL VIH VIH High-Z Active Deselect VSO to VPFD (min) (2) X X X High-Z CMOS Standby Deselect ≤ VSO (2) X X X High-Z Battery Back-Up Note: 1. X = VIH or VIL. 2. VSO = Battery Back-up Swit chover Voltage. (See Tables 7A and 7B for details). Table 4. Truth Table for SRAM Bank Select (1) Mode VCC Select 4.5V to 5.5V or 3.0V to 3.6V Deselect EX A E1CON E2 CON Power Low Low Low High Active Low High High Low Active High X High High Standby Deselect VSO to VPFD (min) (2) X X High High CMOS Standby Deselect ≤ VSO (2) X X High High Battery Back-Up Note: 1. X = VIH or VIL. 2. VSO = Battery Back-up Swit chover Voltage. (See Tables 7A and 7B for details). 3/23 M48T212Y, M48T212V Figure 3. Hardware Hookup A0-A18 5V/3.3V MOTOROLA MTD20P06HDL A0-A3 VCCSW VCC 0.1µF A0-Axx 1N5817 (1) VOUT A VCC 0.1µF CMOS SRAM E E EX W E1CON Note 2 G E2CON WDI RSTIN1 RSTIN2 DQ0-DQ7 A0-Axx RST VCC IRQ/FT CMOS SRAM VSS E M48T212Y/V AI03046 Note: 1. See description in Power Supply Decoupling and Undershoot Protection. 2. Traces connecting E1CON and E2CON to external SRAM should be as short as possible. Figure 4. AC Testing Load Circuit Table 5. AC Measurement Conditions Input Rise and Fall Times Input Pulse Voltages 645Ω DEVICE UNDER TEST Input and Output Timing Ref. Voltages 0 to 3V 1.5V Note that Output Hi-Z is defined as the point where data is no longer driven. CL = 100pF or 5pF (1) CL = 30 pF (2) 1.75V CL includes JIG capacitance AI03239 Note: 1. DQ0-DQ7 2. E1CON and E2 CON 4/23 ≤ 5ns M48T212Y, M48T212V Table 6. Capacitance (1) (TA = 25 °C, f = 1 MHz) Symbol C IN C OUT (2) Parameter Test Condit ion Input Capacitance Input/Output Capacitance Min Max Unit VIN = 0V 10 pF VOUT = 0V 10 pF Note: 1. Sampled only, not 100% tested. 2. Outputs deselected. Table 7A. DC Characteristics for M48T212V (TA = 0 to 70°C; VCC = 3V to 3.6V) Symbol Parameter ILI (1,2) Input Leakage Current ILO (1) Output Leakage Current ICC Supply Current ICC1 Supply Current (Standby) TTL ICC2 Supply Current (Standby) CMOS IBAT Test Condition Min Max Unit 0V ≤ VIN ≤ V CC ±1 µA 0V ≤ VOUT ≤ VCC ±1 µA 10 mA E = VIH 3 mA E = VCC –0.2 2 mA 800 nA 100 nA Outputs open Typ 4 Battery Current OSC ON 575 Battery Current OSC OFF VIL Input Low Voltage –0.3 0.8 V VIH Input High Voltage 2.0 VCC + 0.3 V VOL Output Low Voltage IOL = 2.1mA 0.4 V Output Low Voltage (open drain) (3) IOL = 10mA 0.4 V VOH Output High Voltage IOH = –1.0mA 2.4 VOHB (4) VOH Battery Back-up IOUT2 = –1.0µA 2.0 IOUT1 (5) VOUT Current (Active) IOUT2 VOUT Current (Battery Back-up) VPFD Power-fail Deselect Voltage VSO Battery Back-up Switchover Voltage VBAT Battery Voltage V 3.6 V VOUT1 > VCC –0.3 70 mA VOUT2 > VBAT –0.3 100 µA 3.0 V 2.7 2.9 VPFD –100mV V 3.0 V Note: 1. 2. 3. 4. Outputs deselected. RSTIN1 and RSTIN2 internally pulled-up to VCC through 100KΩ resistor. WDI internally pulled-down to VSS through 100KΩ resistor. For IRQ/FT & RST pins (Open Drain). Conditioned outputs (E1CON - E2CON) can only sustain CMOS leakage currents in the battery back-up mode. Higher leakage currents will reduce battery life. 5. External SRAM must match TIMEKEE PER Controller chip VCC specification. 5/23 M48T212Y, M48T212V Table 7B. DC Characteristics for M48T212Y (TA = 0 to 70°C; VCC = 4.5V to 5.5V) Symbol Parameter ILI (1,2) Input Leakage Current ILO (1) Output Leakage Current ICC Supply Current ICC1 Supply Current (Standby) TTL ICC2 Supply Current (Standby) CMOS IBAT Test Condition Min Max Unit 0V ≤ VIN ≤ VCC ±1 µA 0V ≤ VOUT ≤ V CC ±1 µA 15 mA E = VIH 5 mA E = VCC –0.2 3 mA 800 nA 100 nA Outputs open Typ 8 Battery Current OSC ON 575 Battery Current OSC OFF VIL Input Low Voltage –0.3 0.8 V VIH Input High Voltage 2.2 VCC + 0.3 V VOL Output Low Voltage IOL = 2.1mA 0.4 V Output Low Voltage (open drain) (3) IOL = 10mA 0.4 V VOH Output High Voltage IOH = –1.0mA 2.4 VOHB (4) VOH Battery Back-up IOUT2 = –1.0µA 2.0 IOUT1 (5) VOUT Current (Active) IOUT2 VOUT Current (Battery Back-up) VPFD Power-fail Deselect Voltage VSO Battery Back-up Switchover Voltage 3.0 V VBAT Battery Voltage 3.0 V V 3.6 V VOUT1 > VCC –0.3 100 mA VOUT2 > VBAT –0.3 100 µA 4.5 V 4.2 4.35 Note: 1. 2. 3. 4. Outputs deselected. RSTIN1 and RSTIN2 internally pulled-up to VCC through 100KΩ resistor. WDI internally pulled-down to VSS through 100KΩ resistor. For IRQ/FT & RST pins (Open Drain). Conditioned outputs (E1CON - E2CON) can only sustain CMOS leakage currents in the battery back-up mode. Higher leakage currents will reduce battery life. 5. External SRAM must match TIMEKEE PER Controller chip VCC specification. The M48T212Y/V also has its own Power-Fail Detect circuit. This control circuitry constantly monitors the supply voltage for an out of tolerance condition. When VCC is out of tolerance, the circuit write protects the TIMEKEEPER register data and external SRAM, providing data security in the midst of unpredictable system operation. As V CC falls, the control circuitry automatically switches to the battery, maintaining data and clock operation until valid power is restored. 6/23 Address Decoding The M48T212Y/V accommodates 4 address lines (A3-A0) which allow access to the sixteen bytes of the TIMEKEEPER clock registers. All TIMEKEEPER registers reside in the controller chip itself. All TIMEKEEPER registers are accessed by enabling E (Chip Enable). M48T212Y, M48T212V Figure 5. Power Down/Up AC Waveform VCC VPFD (max) VPFD (min) VSO tF tR tFB INPUTS VALID OUTPUTS VALID tRB tREC DON’T CARE VALID HIGH-Z VALID RST VCCSW AI02638 Table 8. Power Down/Up AC Characteristics (TA = 0 to 70°C) Symbol Parameter Min Max Unit 300 µs M48T212Y 10 µs M48T212V 150 µs VPFD (min) to VPFD (max) VCC Rise Time 10 µs tREC VPFD (max) to RST High 40 tRB VSS to VPFD (min) VCC Rise Time 1 tF VPFD (max) to VPFD (min) VCC Fall Time tFB VPFD (min) to VSS VCC Fall Time tR 200 ms µs 7/23 M48T212Y, M48T212V Figure 6. Chip Enable Control and Bank Select Timing EX tEXPD tAPD A tEXPD E1CON E2CON AI02639 Table 9. Chip Enable Control and Bank Select Characteristics (TA = 0 to 70°C) Symbol M48T212Y M48T212V -70 -85 Parameter Min Max Min Unit Max tEXPD EX to E1CON or E2CON (Low or High) 10 15 ns tAPD A to E1CON or E2CON (Low or High) 10 15 ns 8/23 M48T212Y, M48T212V viding that the E and G access times are also satisfied.If they are not, then data access must be measured from the latter occurring signal (E or G) and the limiting parameter is either tELQV for E or tGLQV for G rather than the address access time. When EX input is low, an external SRAM location will be selected. Note: Care should be taken to avoid taking both E and EX low simultaneously to avoid bus contention. READ MODE The M48T212Y/V executes a read cycle whenever W (Write Enable) is high and E (Chip Enable) is low. The unique address specified by the address inputs (A3-A0) defines which one of the on-chip TIMEKEEPER registers is to be accessed. When the address presented to the M48T212Y/V is in the range of 0h-Fh, one of the on-board TIMEKEEPER registers is accessed and valid data will be available to the eight data output drivers within tAVQV after the address input signal is stable, proFigure 7. Read Cycle Timing: RTC Control Signals READ tAVAV READ WRITE tAVAV tAVAV ADDRESS tELQV tAVQV tAVWL tWHAX E tELQX tGLQV G tWLWH W tGLQX tAXQX tGHQZ DATA OUT VALID DQ7-DQ0 DATA OUT VALID DATA IN VALID AI02640 Table 10. Read Mode Characteristics (TA = 0 to 70°C) Symbol M48T212Y M48T212V -70 -85 Parameter Min Max Max tAVAV Read Cycle Time tAVQV Address Valid to Output Valid 70 85 ns tELQV Chip Enable Low to Output Valid 70 85 ns tGLQV Output Enable Low to Output Valid 25 35 ns (1) 70 Min Unit 85 ns Chip Enable Low to Output Transition 5 5 ns tGLQX (1) Output Enable Low to Output Transition 0 0 ns t EHQZ (1) Chip Enable High to Output Hi-Z 20 25 ns tGHQZ (1) Output Enable High to Output Hi-Z 20 25 ns tELQX tAXQX Address Transition to Output Transition 5 5 ns Note: 1. CL = 5pF 9/23 M48T212Y, M48T212V WRITE MODE The M48T212Y/V is in the Write Mode whenever W (Write Enable) and E (Chip Enable) are in a low state after the address inputs are stable. The start of a write is referenced from the latter occurring falling edge of W or E. A write is terminated by the earlier rising edge of W or E. The addresses must be held valid throughout the cycle. E or W must return high for a minimum of tEHAX from Chip Enable or tWHAX from Write Enable prior to the initiation of another read or write cycle. Data-in must be valid tDVWH prior to the end of write and remain valid for tWHDX afterward. G should be kept high during write cycles to avoid bus contention; although, if the output bus has been activated by a low on E and G a low on W will disable the outputs tWLQZ after W falls. When E is low during the write, one of the onboard TIMEKEEPER registers will be selected and data will be written into the device. When EX is low (and E is high) an external SRAM location is selected. Note: Care should be taken to avoid taking both E and EX low simultaneously to avoid bus contention. Figure 8. Write Cycle Timing: RTC Control Signals WRITE WRITE READ tAVAV tAVAV tAVAV ADDRESS tAVEH tAVEL tELEH tAVWH tEHAX tWHAX tAVQV E tGLQV G tEHDX tWLWH tAVWL tWHQX tWLQZ W tEHQZ DQ0-DQ7 DATA OUT VALID tDVEH DATA IN VALID tDVWH tWHDX DATA IN VALID DATA OUT VALID AI02641 10/23 M48T212Y, M48T212V Table 11. Write Mode AC Characteristics (TA = 0 to 70°C) Symbol M48T212Y M48T212V -70 -85 Parameter Min Max Min Unit Max tAVAV Write Cycle Time 70 85 ns tAVWL Address Valid to Write Enable Low 0 0 ns tAVEL Address Valid to Chip Enable Low 0 0 ns tWLWH Write Enable Pulse Width 45 55 ns tELEH Chip Enable Low to Chip Enable High 50 60 ns tWHAX Write Enable High to Address Transition 0 0 ns tEHAX Chip Enable High to Address Transition 0 0 ns tDVWH Input Valid to Write Enable High 25 30 ns tDVEH Input Valid to Chip Enable High 25 30 ns tWHDX Write Enable High to Input Transition 0 0 ns tEHDX Chip Enable High to Input Transition 0 0 ns tWLQZ (1,2) Write Enable Low to Output High-Z tAVWH Address Valid to Write Enable High 55 65 ns tAVEH Address Valid to Chip Enable High 55 65 ns 5 5 ns t WHQX (1,2) Write Enable High to Output Transition 20 25 ns Note: 1. CL = 5pF. 2. If E goes low simultaneously with W going low, the outputs remain in the high impedance state. DATA RETENTION MODE With valid VCC applied, the M48T212Y/V can be accessed as described above with read or write cycles. Should the supply voltage decay, the M48T212Y/V will automatically deselect, write protecting itself (and any external SRAM) when VCC falls between VPFD (max) and VPFD (min). This is accomplished by internally inhibiting access to the clock registers via the E signal. At this time, the Reset pin (RST) is driven active and will remain active until VCC returns to nominal levels. External RAM access is inhibited in a similar manner by forcing E1CON and E2CON to a high level. This level is within 0.2 volts of the V BAT. E1CON and E2CON will remain at this level as long as VCC remains at an out-of tolerance condition. When VCC falls below the level of the battery (VBAT), power input is switched from the VCC pin to the SNAPHAT battery and the clock registers and external SRAM are maintained from the attached battery supply. All outputs become high im- pedance. The VOUT pin is capable of supplying 100µA of current to the attached memory with less than 0.3V drop under this condition. On power up, when VCC returns to a nominal value, write protection continues for 200ms (max) by inhibiting E1CON or E2CON. The RST signal also remains active during this time (see Figure 5). Note: Most low power SRAMs on the market today can be used with the M48T212Y/V TIMEKEEPER Controller. There are, however some criteria which should be used in making the final choice of an SRAM to use. The SRAM must be designed in a way where the chip enable input disables all other inputs to the SRAM. This allows inputs to the M48T212Y/V and SRAMs to be Don’t Care once VCC falls below VPFD(min). The SRAM should also guarantee data retention down to VCC = 2.0V. The chip enable access time must be sufficient to meet the system needs with the chip enable output propagation delays included. 11/23 M48T212Y, M48T212V Figure 9. Alarm Interrupt Reset Waveforms A0-A3 1h ADDRESS 0h Fh ACTIVE FLAG BIT IRQ/FT HIGH-Z AI03021 Table 12. Alarm Repeat Modes RPT5 RPT4 RPT3 RPT2 RPT1 Alarm Setting 1 1 1 1 1 Once per Second 1 1 1 1 0 Once per Minute 1 1 1 0 0 Once per Hour 1 1 0 0 0 Once per Day 1 0 0 0 0 Once per Month 0 0 0 0 0 Once per Year If the SRAM includes a second chip enable pin (E2), this pin should be tied to VOUT. If data retention lifetime is a critical parameter for the system, it is important to review the data retention current specifications for the particular SRAMs being evaluated. Most SRAMs specify a data retention current at 3.0V. Manufacturers generally specify a typical condition for room temperature along with a worst case condition (generally at elevated temperatures). The system level requirements will determine the choice of which value to use. 12/23 The data retention current value of the SRAMs can then be added to the IBAT value of the M48T212Y/ V to determine the total current requirements for data retention. The available battery capacity for the SNAPHAT of your choice can then be divided by this current to determine the amount of data retention available (see Table 15). For a further more detailed review of lifetime calculations, please see Application Note AN1012. M48T212Y, M48T212V Figure 10. Back-Up Mode Alarm Waveforms tREC VCC VPFD (max) VPFD (min) AFE bit/ABE bit AF bit in Flags Register IRQ/FT HIGH-Z HIGH-Z AI03622 TIMEKEEPER REGISTERS The M48T212Y/V offers 16 internal registers which contain TIMEKEEPER, Alarm, Watchdog, Flag, and Control data. These registers are memory locations which contain external (user accessible) and internal copies of the data (usually referred to as BiPORTTM TIMEKEEPER cells). The external copies are independent of internal functions except that they are updated periodically by the simultaneous transfer of the incremented internal copy. TIMEKEEPER and Alarm Registers store data in BCD. Control, Watchdog and Flags Registers store data in Binary Format. CLOCK OPERATIONS Reading the Clock Updates to the TIMEKEEPER registers should be halted before clock data is read to prevent reading data in transition. Because the BiPORT TIMEKEEPER cells in the RAM array are only data registers, and not the actual clock counters, updating the registers can be halted without disturbing the clock itself. Updating is halted when a ‘ 1’ is written to the READ bit, D6 in the Control Register (8h). As long as a ‘1’ remains in that position, updating is halted. After a halt is issued, the registers reflect the count; that is, the day, date, and time that were current at the moment the halt command was issued. All of the TIMEKEEPER registers are updated simultaneously. A halt will not interrupt an update in progress. Updating occurs 1 second after the READ bit is reset to a ‘ 0’. Setting the Clock Bit D7 of the Control Register (8h) is the WRITE bit. Setting the WRITE bit to a ‘ 1’, like the READ bit, halts updates to the TIMEKEEPER registers. The user can then load them with the correct day, date, and time data in 24 hour BCD format (see Table 13). Resetting the WRITE bit to a ‘0’ then transfers the values of all time registers (Fh-9h, 1h) to the actual TIMEKEEPER counters and allows normal operation to resume. After the WRITE bit is reset, the next clock update will occur one second later. Note: Upon power-up following a power failure, the READ bit will automatically be set to a ‘1’. This will prevent the clock from updating the TIMEKEEPER registers, and will allow the user to read the exact time of the power-down event. Resetting the READ Bit to a ‘0’ will allow the clock to update these registers with the current time. The WRITE Bit will be reset to a ‘ 0’ upon powerup. 13/23 M48T212Y, M48T212V Stopping and Starting the Oscillator The oscillator may be stopped at any time. If the device is going to spend a significant amount of time on the shelf, the oscillator can be turned off to minimize current drain on the battery. The STOP bit is located at Bit D7 within the Seconds Register (9h). Setting it to a ‘1’ stops the oscillator. When reset to a ‘0’, the M48T212Y/V oscillator starts within one second. Note: It is not necessary to set the WRITE bit when setting or resetting the FREQUENCY TEST bit (FT) or the STOP bit (ST). SETTING ALARM CLOCK Address locations 6h-2h contain the alarm settings. The alarm can be configured to go off at a prescribed time on a specific month, date, hour, minute, or second or repeat every year, month, day, hour, minute, or second. It can also be programmed to go off while the M48T212Y/V is in the battery back-up to serve as a system wake-up call. Bits RPT5-RPT1 put the alarm in the repeat mode of operation. Table 12 shows the possible configurations. Codes not listed in the table default to the once per second mode to quickly alert the user of an incorrect alarm setting. Note: User must transition address (or toggle chip enable) to see Flag bit change. When the clock information matches the alarm clock settings based on the match criteria defined by RPT5-RPT1, the AF (Alarm Flag) is set. If AFE (Alarm Flag Enable) is also set, the alarm condition activates the IRQ/FT pin. To disable alarm, write ’0’ to the Alarm Date registers and RPT1-4. The IRQ/FT output is cleared by a read to the Flags register as shown in Figure 9. A subsequent read of the Flags register will reset the Alarm Flag (D6; Register 0h). The IRQ/FT pin can also be activated in the battery back-up mode. The IRQ/FT will go low if an alarm occurs and both ABE (Alarm in Battery Back-up Mode Enable) and AFE are set. The ABE and AFE bits are reset during power-up, therefore an alarm generated during power-up will only set AF. The user can read the Flag Register at system boot-up to determine if an alarm was generated while the M48T212Y/V was in the deselect mode during power-up. Figure 10 illustrates the back-up mode alarm timing. 14/23 WATCHDOG TIMER The watchdog timer can be used to detect an outof-control microprocessor. The user programs the watchdog timer by setting the desired amount of time-out into the Watchdog Register, address 7h. Bits BMB4-BMB0 store a binary multiplier and the two lower order bits RB1-RB0 select the resolution, where 00=1/16 second, 01=1/4 second, 10=1 second, and 11=4 seconds. The amount of timeout is then determined to be the multiplication of the five bit multiplier value with the resolution. (For example: writing 00001110 in the Watchdog Register = 3*1 or 3 seconds). Note: Accuracy of timer is within ± the selected resolution. If the processor does not reset the timer within the specified period, the M48T212Y/V sets the WDF (Watchdog Flag) and generates a watchdog interrupt or a microprocessor reset. WDF is reset by reading the Flags Register (Address 0h). The most significant bit of the Watchdog Register is the Watchdog Steering Bit (WDS). When set to a ‘ 0’, the watchdog will activate the IRQ/FT pin when timed-out. When WDS is set to a ‘ 1’, the watchdog will output a negative pulse on the RST pin for 40 to 200 ms. The Watchdog register and the FT bit will reset to a ‘0’ at the end of a Watchdog time-out when the WDS bit is set to a ‘ 1’. The watchdog timer can be reset by two methods: 1. a transition (high-to-low or low-to-high) can be applied to the Watchdog Input pin (WDI) or 2. the microprocessor can perform a write of the Watchdog Register. The time-out period then starts over. The WDI pin should be tied to VSS if not used. The watchdog will be reset on each transition (edge) seen by the WDI pin. In the order to perform a software reset of the watchdog timer, the original time-out period can be written into the Watchdog Register, effectively restarting the count-down cycle. Should the watchdog timer time-out, and the WDS bit is programmed to output an interrupt, a value of 00h needs to be written to the Watchdog Register in order to clear the IRQ/FT pin. This will also disable the watchdog function until it is again programmed correctly. A read of the Flags Register will reset the Watchdog Flag (Bit D7; Register 0h). The watchdog function is automatically disabled upon power-down and the Watchdog Register is cleared. If the watchdog function is set to output to the IRQ/FT pin and the frequency test function is activated, the watchdog or alarm function prevails and the frequency test function is denied. M48T212Y, M48T212V Table 13. TIMEKEEPER Register Map Address D7 D6 Fh D5 D4 D3 D2 D1 10 Years Function/Range BCD Format Year Year 00-99 Month Month 01-12 Date: Day of Month Date 01-31 Day of Week Day 01-7 Hours (24 Hour Format) Hour 00-23 Eh 0 0 Dh 0 0 Ch 0 FT Bh 0 0 Ah 0 10 Minutes Minutes Min 00-59 9h ST 10 Seconds Seconds Sec 00-59 8h W R S 7h WDS BMB4 BMB3 BMB2 6h AFE 0 ABE Al 10M 5h RPT4 RPT5 4h RPT3 0 3h RPT2 2h RPT1 1h 0h Keys: 0 D0 10M 10 Date 0 0 0 10 Hours Calibration BMB1 RB1 RB0 Watchdog Alarm Month A Month 01-12 AI 10 Date Alarm Date A Date 01-31 AI 10 Hour Alarm Hour A Hour 00-23 Alarm 10 Minutes Alarm Minutes A Min 00-59 Alarm 10 Seconds Alarm Seconds A Sec 00-59 100 Year Century 00-99 1000 Year WDF BMB0 Control AF Y BL S = Sign Bit FT = Frequency Test Bit R = Read Bit W = Write Bit ST = Stop Bit 0 = Must be set to zero BL = Battery Low Flag BMB0-BMB4 = Watchdog Multiplier Bits VCC SWITCH OUTPUT Vccsw output goes low when VOUT switches to VCC turning on a customer supplied P-Channel MOSFET (see Figure 3). The Motorola MTD20P06HDL is recommended. This MOSFET in turn connects VOUT to a separate supply when the current requirement is greater than IOUT1 (see Tables 7A and 7B). This output may also be used simply to indicate the status of the internal battery switchover comparator, which controls the source (VCC or battery) of the VOUT output. POWER-ON RESET The M48T212Y/V continuously monitors VCC. When VCC falls to the power fail detect trip point, the RST pulls low (open drain) and remains low on power-up for 40 to 200ms after VCC passes VPFD. Y Y Y Y Flag AFE = Alarm Flag Enable Flag RB0-RB1 = Watchdog Resolution Bits WDS = Watchdog Steering Bit ABE = Alarm in Battery Back-Up Mode Enable Bit RPT1-RPT5 = Alarm Repeat Mode Bits WDF = Watchdog flag AF = Alarm flag Y = ‘1’ or ‘0’ The RST pin is an open drain output and an appropriate pull-up resistor to VCC should be chosen to control rise time. Note: If the RST output is fed back into either of the RSTIN inputs (for a microprocessor with a bidirectional reset) then a 1kΩ (max) pull-up resistor is recommended. Reset Inputs (RSTIN1 & RSTIN2) The M48T212Y/V provides two independent inputs which can generate an output reset. The duration and function of these resets is identical to a reset generated by a power cycle. Table 14 and Figure 12 illustrate the AC reset characteristics of this function. During the time RST is enabled (tR1HRH & tR2HRH), the Reset Inputs are ignored. Note: RSTIN1 and RSTIN2 are each internally pulled up to VCC through a 100KΩ resistor. 15/23 M48T212Y, M48T212V Figure 11. Calibration Waveform NORMAL POSITIVE CALIBRATION NEGATIVE CALIBRATION AI00594B Calibrating the Clock The M48T212Y/V is driven by a quartz controlled oscillator with a nominal frequency of 32,768 Hz. The devices are tested not to exceed ±35 PPM (parts per million) oscillator frequency error at 25°C, which equates to about ±1.53 minutes per month. When the Calibration circuit is properly employed, accuracy improves to better than +1/–2 PPM at 25°C. The oscillation rate of crystals changes with temperature. The M48T212Y/V design employs periodic counter correction. The calibration circuit adds or subtracts counts from the oscillator divider circuit at the divide by 256 stage, as shown in Figure 11. The number of times pulses which are blanked (subtracted, negative calibration) or split (added, positive calibration) depends upon the value loaded into the five Calibration bits found in the Control Register. Adding counts speeds the clock up, subtracting counts slows the clock down. The Calibration bits occupy the five lower order bits (D4-D0) in the Control Register 8h. These bits can be set to represent any value between 0 and 31 in binary form. Bit D5 is a Sign bit; ‘1’ indicates positive calibration, ‘0’ indicates negative calibration. Calibration occurs within a 64 minute cycle. The first 62 minutes in the cycle may, once per minute, have one second either shortened by 128 or lengthened by 256 oscillator cycles. If a binary ‘1’ is loaded into the register, only the first 2 minutes in the 64 minute cycle will be modified; if a binary 6 is loaded, the first 12 will be affected, and so on. Therefore, each calibration step has the effect of adding 512 or subtracting 256 oscillator cycles for every 125,829,120 actual oscillator cycles, that is +4.068 or –2.034 PPM of adjustment per calibration step in the calibration register. Assuming that the oscillator is running at exactly 32,768 Hz, each of the 31 increments in the Calibration byte would 16/23 represent +10.7 or –5.35 seconds per month which corresponds to a total range of +5.5 or –2.75 minutes per month. Two methods are available for ascertaining how much calibration a given M48T212Y/V may require. The first involves setting the clock, letting it run for a month and comparing it to a known accurate reference and recording deviation over a fixed period of time. Calibration values, including the number of seconds lost or gained in a given period, can be found in Application Note AN934: TIMEKEEPER Calibration. This allows the designer to give the end user the ability to calibrate the clock as the environment requires, even if the final product is packaged in a non-user serviceable enclosure. The designer could provide a simple utility that accesses the Calibration byte. The second approach is better suited to a manufacturing environment, and involves the use of the IRQ/FT pin. The pin will toggle at 512Hz, when the Stop bit (ST, D7 of 9h) is ‘ 0’,the Frequency Test bit (FT, D6 of Ch) is ‘ 1’, the Alarm Flag Enable bit (AFE, D7 of 6h) is ‘ 0’, and the Watchdog Steering bit (WDS, D7 of 7h) is ‘1’ or the Watchdog Register (7h=0) is reset. Any deviation from 512 Hz indicates the degree and direction of oscillator frequency shift at the test temperature. For example, a reading of 512.010124 Hz would indicate a +20 PPM oscillator frequency error, requiring a –10 (WR001010) to be loaded into the Calibration Byte for correction. Note that setting or changing the Calibration Byte does not affect the Frequency test output frequency. The IRQ/FT pin is an open drain output which requires a pull-up resistor to VCC for proper operation. A 500-10kΩ resistor is recommended in order to control the rise time. The FT bit is cleared on power-up. M48T212Y, M48T212V Table 14. Reset AC Characteristics (TA = 0 to 70°C; VCC = 3V to 3.6V or VCC = 4.5V to 5.5V) Symbol Parameter Min Max Unit tR1 (1) RSTIN1 Low to RSTIN1 High 200 ns tR2 (2) RSTIN2 Low to RSTIN2 High 100 ms tR1HRH (3) RSTIN1 High to RST High 40 200 ms tR2HRH (3) RSTIN2 High to RST High 40 200 ms Note: 1. Pulse width less than 50ns will result in no RESET (for noise immunity). 2. Pulse width less than 20ms will result in no RESET (for noise immunity). 3. CL = 5pF (see Figure 4). Table 15. SNAPHAT Battery Table Part Number Description Package M4T28-BR12SH Lithium Battery (48mAh) SNAPHAT SH M4T32-BR12SH Lithium Battery (120mAh) SNAPHAT SH Figure 12. RSTIN1 & RSTIN2 Timing Waveforms RSTIN1 tR1 RSTIN2 tR2 RST (1) tR1HRH tR2HRH AI02642 BATTERY LOW WARNING The M48T212Y/V automatically performs battery voltage monitoring upon power-up and at factoryprogrammed time intervals of approximately 24 hours. The Battery Low (BL) bit, Bit D4 of Flags Register 0h, will be asserted if the battery voltage is found to be less than approximately 2.5V. The BL bit will remain asserted until completion of battery replacement and subsequent battery low monitoring tests, either during the next power-up sequence or the next scheduled 24-hour interval. If a battery low is generated during a power-up sequence, this indicates that the battery is below approximately 2.5 volts and may not be able to maintain data integrity in the SRAM. Data should be considered suspect and verified as correct. A fresh battery should be installed. If a battery low indication is generated during the 24-hour interval check, this indicates that the bat- tery is near end of life. However, data is not compromised due to the fact that a nominal Vcc is supplied. In order to insure data integrity during subsequent periods of battery back-up mode, the battery should be replaced. The SNAPHAT battery/crystal top should be replaced with VCC powering the device to avoid data loss. Note: this will cause the clock to lose time during the time interval the battery crystal is removed. The M48T212Y/V only monitors the battery when a nominal Vcc is applied to the device. Thus applications which require extensive durations in the battery back-up mode should be powered-up periodically (at least once every few months) in order for this technique to be beneficial. Additionally, if a battery low is indicated, data integrity should be verified upon power-up via a checksum or other technique. 17/23 M48T212Y, M48T212V INITIAL POWER-ON DEFAULTS Upon application of power to the device, the following register bits are set to a ‘0’ state: WDS, BMB0-BMB4, RB0-RB1, AFE, ABE, W and FT. (See Table 16) POWER SUPPLY DECOUPLING AND UNDERSHOOT PROTECTION Note: ICC transients, including those produced by output switching, can produce voltage fluctuations, resulting in spikes on the VCC bus. These transients can be reduced if capacitors are used to store energy, which stabilizes the VCC bus. The energy stored in the bypass capacitors will be released as low going spikes are generated or energy will be absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1µF is recommended in order to provide the needed filtering. In addition to transients that are caused by normal SRAM operation, power cycling can generate negative voltage spikes on V CC that drive it to values below VSS by as much as one volt. These negative spikes can cause data corruption in the SRAM while in battery backup mode. To protect from these voltage spikes, ST recommends connecting a schottky diode from VCC to Figure 13. Supply Voltage Protection VCC VCC 0.1µF DEVICE VSS AI02169 VSS (cathode connected to VCC, anode to V SS). (Schottky diode 1N5817 is recommended for through hole and MBRS120T3 is recommended for surface mount). Table 16. Default Values W R FT AFE ABE WATCHDOG Register (1) Initial Power-up (Battery Attach for SNAPHAT) (2) 0 0 0 0 0 0 Subsequent Power-up / RESET (3) 0 0 0 0 0 0 Power-down (4) 0 0 0 1 1 0 Conditi on Note: 1. 2. 3. 4. 18/23 WDS, BMB0-BMB4, RB0, RB1. State of other control bits undefined. State of other control bits remains unchanged. Assuming these bits set to ‘1’ prior to power-down. M48T212Y, M48T212V Table 17. Ordering Information Scheme Example: M48T212Y -70 MH 1 TR Device Type M48T Supply Voltage and Write Protect Voltage 212Y = VCC = 4.5V to 5.5V; V PFD = 4.2V to 4.5V 212V = VCC = 3.0V to 3.6V; V PFD = 2.7V to 3.0V Speed -70 = 70ns (for M48T212Y) -85 = 85ns (for M48T212V) Package MH (1) = SOH44 Temperature Range 1 = 0 to 70 °C 6 = –40 to 85 °C Shipping Method for SOIC blank = Tubes TR = Tape & Reel Note: 1. The SOIC package (SOH44) requires the battery package (SNAPHAT ) which is ordered separately under the part number “M4Txx-BR12SH1” in plastic tube or ”M4Txx-BR12SH1TR” in Tape & Reel form. Caution: Do not place the SNAPHAT battery package ”M4Txx-BR12SH1” in conductive foam since will drain the lithium button-cell battery. For a list of available options (Speed, Package, etc...) or for further information on any aspect of this device, please contact the STMicroelectronics Sales Office nearest to you. Table 18. Revision History Date Revision Details October 1999 First Issue 03/01/00 Document Layout changed Default Values table added (Table 16) 04/21/00 From Preliminary Data to Data Sheet 19/23 M48T212Y, M48T212V Table 19. SOH44 - 44 lead Plastic Small Outline, SNAPHAT, Package Mechanical Data mm inches Symb Typ Min Max A Typ Min 3.05 0.120 A1 0.05 0.36 0.002 0.014 A2 2.34 2.69 0.092 0.106 B 0.36 0.46 0.014 0.018 C 0.15 0.32 0.006 0.012 D 17.71 18.49 0.697 0.728 E 8.23 8.89 0.324 0.350 – – – – eB 3.20 3.61 0.126 0.142 H 11.51 12.70 0.453 0.500 L 0.41 1.27 0.016 0.050 α 0° 8° 0° 8° N 44 e 0.81 0.032 44 CP 0.10 0.004 Figure 14. SOH44 - 44 lead Plastic Small Outline, SNAPHAT, Package Outline A2 A C B eB e CP D N E H A1 1 SOH-A Drawing is not to scale. 20/23 Max α L M48T212Y, M48T212V Table 20. M4T28-BR12SH SNAPHAT Housing for 48 mAh Battery & Crystal, Package Mechanical Data mm inches Symb Typ Min A Max Typ Min Max 9.78 0.385 A1 6.73 7.24 0.265 0.285 A2 6.48 6.99 0.255 0.275 A3 0.38 0.015 B 0.46 0.56 0.018 0.022 D 21.21 21.84 0.835 0.860 E 14.22 14.99 0.560 0.590 eA 15.55 15.95 0.612 0.628 eB 3.20 3.61 0.126 0.142 L 2.03 2.29 0.080 0.090 Figure 15. M4T28-BR12SH SNAPHAT Housing for 48 mAh Battery & Crystal, Package Outline A1 eA A2 A A3 B L eB D E SHTK-A Drawing is not to scale. 21/23 M48T212Y, M48T212V Table 21. M4T32-BR12SH SNAPHAT Housing for 120 mAh Battery & Crystal, Package Mechanical Data mm inches Symb Typ Min A Max Typ Min Max 10.54 0.415 A1 8.00 8.51 0.315 .0335 A2 7.24 8.00 0.285 0.315 A3 0.38 0.015 B 0.46 0.56 0.018 0.022 D 21.21 21.84 0.835 0.860 E 17.27 18.03 0.680 .0710 eA 15.55 15.95 0.612 0.628 eB 3.20 3.61 0.126 0.142 L 2.03 2.29 0.080 0.090 Figure 16. M4T32-BR12SH SNAPHAT Housing for 120 mAh Battery & Crystal, Package Outline A1 eA A2 A A3 B L eB D E SHTK-A Drawing is not to scale. 22/23 M48T212Y, M48T212V Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in lif e support devices or systems without express written approval of STMicroelectronics. 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