STMICROELECTRONICS M54HCT245D1

M54HCT245
RAD HARD OCTAL BUS TRANSCEIVER
WITH 3 STATE OUTPUTS (NON INVERTED)
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HIGH SPEED:
tPD = 13ns (TYP.) at VCC = 4.5V
LOW POWER DISSIPATION:
ICC = 4µA(MAX.) at TA=25°C
COMPATIBLE WITH TTL OUTPUTS:
VIH = 2V (MIN.) VIL = 0.8V (MAX)
SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 6mA (MIN)
BALANCED PROPAGATION DELAYS:
tPLH ≅ tPHL
PIN AND FUNCTION COMPATIBLE WITH
54 SERIES 245
SPACE GRADE-1: ESA SCC QUALIFIED
50 krad QUALIFIED, 100 krad AVAILABLE ON
REQUEST
NO SEL UNDER HIGH LET HEAVY IONS
IRRADIATION
DEVICE FULLY COMPLIANT WITH
SCC-9405-014
DESCRIPTION
The M54HCT245 is an advanced high-speed
CMOS OCTAL BUS TRANSCEIVER (3-STATE)
fabricated with silicon gate C2MOS technology.
This IC is intended for two-way asynchronous
communication between data buses, and the
DILC-20
FPC-20
ORDER CODES
PACKAGE
FM
EM
DILC
FPC
M54HCT245D
M54HCT245K
M54HCT245D1
M54HCT245K1
direction of data transmission is determined by
DIR input. The enable input G can be used to
disable the device so that the buses are effectively
isolated.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
All floating bus terminals during High Z State must
be held HIGH or LOW.
PIN CONNECTION
June 2004
Rev. 1
1/10
M54HCT245
Figure 1: IEC Logic Symbols
Figure 2: Input And Output Equivalent Circuit
Table 1: Pin Description
PIN N°
SYMBOL
1
2, 3, 4, 5, 6,
7, 8, 9
18, 17, 16,
15, 14, 13,
12, 11
19
10
20
DIR
A1 to A8
Directional Control
Data Inputs/Outputs
B1 to B8
Data Inputs/Outputs
G
GND
VCC
NAME AND FUNCTION
Output Enable Input
Ground (0V)
Positive Supply Voltage
Table 2: Truth Table
INPUTS
OUTPUT
G
DIR
A BUS
B BUS
Yn
L
L
H
L
H
X
OUTPUT
INPUT
Z
INPUT
OUTPUT
Z
A=B
B=A
Z
X : Don’t Care
Z : High Impedance
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FUNCTION
M54HCT245
Table 3: Absolute Maximum Ratings
Symbol
VCC
Parameter
Supply Voltage
Value
Unit
-0.5 to +7
V
VI
DC Input Voltage
-0.5 to VCC + 0.5
V
VO
DC Output Voltage
-0.5 to VCC + 0.5
± 20
V
mA
IIK
DC Input Diode Current
IOK
DC Output Diode Current
± 20
mA
IO
DC Output Current
± 35
mA
± 70
mA
ICC or IGND DC VCC or Ground Current
PD
Power Dissipation
Tstg
Storage Temperature
TL
Lead Temperature (10 sec)
420
mW
-65 to +150
°C
265
°C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
Table 4: Recommended Operating Conditions
Symbol
VCC
Parameter
Value
Unit
Supply Voltage
4.5 to 5.5
V
VI
Input Voltage
0 to VCC
V
VO
Output Voltage
0 to VCC
V
Top
Operating Temperature
-55 to 125
°C
tr, tf
Input Rise and Fall Time (VCC = 4.5 to 5.5V)
0 to 500
ns
3/10
M54HCT245
Table 5: DC Specifications
Test Condition
Symbol
VIH
VIL
VOH
VOL
II
IOZ
ICC
∆ ICC
Parameter
High Level Input
Voltage
Low Level Input
Voltage
Min.
4.5
to
5.5
4.5
to
5.5
4.5
Low Level Output
Voltage
4.5
Input Leakage
Current
High Impedance
Output Leakage
Current
Quiescent Supply
Current
Additional Worst
Case Supply
Current
TA = 25°C
VCC
(V)
High Level Output
Voltage
Value
Typ.
Max.
2.0
-40 to 85°C
-55 to 125°C
Min.
Min.
Max.
2.0
0.8
Max.
2.0
0.8
V
0.8
IO=-20 µA
4.4
4.5
4.4
4.4
IO=-6.0 mA
4.18
4.31
4.13
4.10
Unit
V
V
IO=20 µA
0.0
0.1
0.1
0.1
IO=6.0 mA
0.17
0.26
0.33
0.40
V
5.5
VI = VCC or GND
± 0.1
±1
±1
µA
5.5
VI = VIH or VIL
VO = VCC or GND
± 0.5
±5
± 10
µA
5.5
VI = VCC or GND
4
40
80
µA
5.5
Per Input pin
VI = 0.5V or
VI = 2.4V
Other Inputs at
VCC or GND
IO = 0
2.0
2.9
3.0
mA
Table 6: AC Electrical Characteristics (CL = 50 pF, Input tr = tf = 6ns)
Test Condition
Symbol
Parameter
tTLH tTHL Output Transition
Time
tPLH tPHL Propagation Delay
Time
tPZL tPZH High Impedance
Output Enable
Time
tPLZ tPHZ High Impedance
Output Disable
Time
4/10
VCC
(V)
CL
(pF)
4.5
4.5
4.5
4.5
Value
TA = 25°C
Min.
-40 to 85°C
-55 to 125°C
Min.
Min.
Max.
Unit
Typ.
Max.
Max.
50
7
12
15
18
ns
50
150
13
18
22
30
28
38
33
45
ns
50
RL = 1 KΩ
19
30
38
45
150
RL = 1 KΩ
24
38
48
57
50
RL = 1 KΩ
17
30
38
45
ns
ns
M54HCT245
Table 7: Capacitive Characteristics
Test Condition
Symbol
Parameter
CIN
Input Capacitance
CI/OUT
Output
Capacitance
Power Dissipation
Capacitance (note
1)
CPD
Value
TA = 25°C
VCC
(V)
Min.
-40 to 85°C
-55 to 125°C
Min.
Min.
Max.
Unit
Typ.
Max.
Max.
DIR, G
5
10
An, Bn
13
pF
41
pF
10
10
pF
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/8 (per circuit)
Figure 3: Test Circuit
TEST
SWITCH
tPLH, tPHL
Open
tPZL, tPLZ
VCC
tPZH, tPHZ
GND
CL = 50pF/150pF or equivalent (includes jig and probe capacitance)
R1 = 1KΩ or equivalent
RT = ZOUT of pulse generator (typically 50Ω)
5/10
M54HCT245
Figure 4: Waveform - Propagation Delay Time (f=1MHz; 50% duty cycle)
Figure 5: Waveform - Output Enable And Disable Time (f=1MHz; 50% duty cycle)
6/10
M54HCT245
DILC-20 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
2.1
2.71
0.083
0.107
a1
3.00
3.70
0.118
0.146
a2
0.63
0.88
1.14
0.025
0.035
0.045
B
1.93
2.03
2.23
0.076
0.080
0.088
b
0.40
0.45
0.50
0.016
0.018
0.020
b1
0.20
0.254
0.30
0.008
0.010
0.012
D
25.14
25.40
25.65
0.990
1.000
1.010
E
7.36
7.62
7.87
0.290
0.300
0.310
e
2.54
0.100
e1
22.73
22.86
22.99
0.895
0.900
0.905
e2
7.62
7.87
8.12
0.300
0.310
0.320
F
7.29
7.49
7.70
0.287
0.295
0.303
I
3.86
K
11.30
L
1.14
1.27
0.152
11.56
0.445
1.40
0.045
0.455
0.050
0.055
0016178J
7/10
M54HCT245
FPC-20 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
9.98
10.16
10.34
0.393
0.400
0.407
B
9.98
10.16
10.34
0.393
0.400
0.407
C
1.45
1.61
1.78
0.57
0.63
0.070
D
0.10
0.127
0.18
0.004
0.005
0.007
E
11.30
11.43
11.56
0.445
0.450
0.455
F
1.27
G
0.38
H
0.48
0.015
7.24
8.16
0.285
0.320
L
24.46
26.67
0.960
1.050
M
0.45
0.55
0.018
N
0.43
0.050
0.50
7.87
0.017
0.020
0.019
0.022
0.310
O
1.14
1.27
1.40
0.045
0.050
0.055
P
0.10
0.18
0.25
0.004
0.007
0.010
016032F
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M54HCT245
Table 8: Revision History
Date
Revision
15-Jun-2004
1
Description of Changes
First Release
9/10
M54HCT245
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