STMICROELECTRONICS M74HCT648M1R

M74HCT646
M74HCT648
HCT646 OCTAL BUS TRANSCEIVER/REGISTER (3-STATE)
HCT648 OCTAL BUS TRANSCEIVER/REGISTER (3-STATE, INV.)
.
.
.
.
.
.
.
HIGH SPEED
fMAX = 60 MHz (TYP.) AT VCC = 5 V
LOW POWER DISSIPATION
ICC = 4 µA (MAX.) AT TA = 25 °C
COMPATIBLE WITH TTL OUTPUTS
VIH = 2V (MIN.) VIL = 0.8V (MAX)
OUTPUT DRIVE CAPABILITY
15 LSTTL LOADS
SYMMETRICAL OUTPUT IMPEDANCE
IOH= IOL = 6 mA (MIN.)
BALANCED PROPAGATION DELAYS
tPLH = tPHL
PIN AND FUNCTION COMPATIBLE
WITH 54/74LS646/648
DESCRIPTION
The M74HCT646/648 are high speed CMOS
OCTAL BUS TRANSCEIVERS AND REGISTERS,
2
(3-STATE) fabricated in silicon gate C MOS technology. They have the same high speed
performance of LSTTL combined with true CMOS
low power consumption. These devices consist of
bus transceiver circuits with 3-state output, D-type
flip-flops, and control circuitry arranged for multiplexed transmission of data directly from the input
bus or from the internal registers. Data on the A or
B bus will be clocked into the registers on the lowto-high transition of the appropriate clock pin (Clock
AB - or Clock BA). Enable (G) and direction (DIR)
pins are provided to control the transceiver functions. In the transceiver mode, data present at the
high-impedance port may be stored in either register
or in both. The select controls (Select AB select BA)
can multiplex stored and real-time (transparent
mode) data. The direction control determines which
bus will receive data when enable G is active (low).
In the isolation mode (enable G high), ”A” data may
be stored in one register and/or ”B” data may be
stored in the other register. When an output function
is disabled, the input function is still enabled and
may be used to store and transmit data. Only one
of the two buses, A or B, may be driven at a time.
All inputs are equipped with protection circuits
against static discharge and transient excess voltage.This integrated circuit has input and output
characteristics that are fully compatible with 54/74
LSTTL logic families. M74HCT devices are designed to directly interface HSC2MOS systems with
TTL and NMOS components. They are also plug in
replacements for LSTTL devices giving a reduction
of power consumption.
October 1993
B1R
(Plastic Package)
M1R
(Micro Package)
ORDER CODES :
M74HCTXXXM1R
M74HCTXXXB1R
PIN CONNECTIONS (top view)
INPUT AND OUTPUT EQUIVALENT CIRCUIT
GAB, GAB, CAB,
SAB, SBA, CBA
A, B
1/12
M74HCT646/648
LOGIC DIAGRAM (HCT648)
Note : In case of M54/74HCT646 output inverter marked * at A bus and B bus are eliminated.
TIMING CHART
2/12
M74HCT646/648
TRUTH TABLE
HCT646 (The truth table for HCT648 is the same as this, but with the outputs inverted)
G
DIR CAB CBA SAB SBA
X
H
X*
X
Z
Z
X
INPUTS
INPUTS
Both the A and B bus are used for inputs to the
internal flip-flops. Data at the bus will be stored on
low to high transition of the clock inputs
X*
L
X
iNPUTS
L
OUTPUTS
L
The A bus are inputs and the B bus are outputs
The data at the A bus are displayed at the B bus
H
H
X*
L
X
L
H
L
H
The data at the A bus are displayed at the B bus.
The data of the A bus are stored to the internal
flip-flop on low to high transition of th clock pulse.
X*
H
X
X
Qn
X*
H
X
The data stored to the internal flip-flop are dispayed
at the B bus
The data at the A bus are stored to the internal flipflop on low to high transition of the clock pulse. The
states of the internal flip-flops output directly to the
B bus
X
X*
L
X
L
X
L
L
X*
x*
FUNCTION
Both the A bus and the B bus are inputs
X
H
X
B
INPUTS
X
X
X
L
X
A
INPUTS
X
The output functions of the A and B bus are disabled
L
L
H
H
OUTPUTS
INPUTS
The A bus are outputs and the B bus are inputs
L
H
L
L
H
L
The data at the B bus are displayed at the A bus
H
H
The data at the B bus are displayed at the A bus.
The data of the B bus are stored to the internal flipflop on low to high transition of the clock pulse
X
H
Qn
X
The data stored to the internal flip-flops are
displayed at the B bus
X
H
L
H
L
H
the data at the B bus are stored to the internal flipflop on low to high transition of the clock pulse. The
states of the internal flip-flops output directly to the
A bus
X
: DON’T CARE
Z
: HIGH IMPEDANCE
Qn : THE DATA STORED TO THE INTERNAL FLIP-FLOPS BY MOST RECENT LOW TO HIGH TRANSITION OF THE CLOCK INPUTS
*
: THE DATA AT THE A AND B BUS WILL BE STORED TO THE INTERNAL FLIP-FLOPS ON EVERY LOW TO HIGH TRANSITION OF
THE CLOCK INPUTS
3/12
M74HCT646/648
PIN DESCRIPTION
PIN No
1
2
3
4, 5, 6, 7, 8, 9, 10, 11
20, 19, 18, 17, 16, 15, 14, 13
21
22
23
12
24
SYMBOL
CLOCK AB
SELECT AB
DIR
A1 to A8
B1 to B8
G
SELECT BA
CLOCK BA
GND
VCC
NAME AND FUNCTION
A to B Clock Input (LOW to HIGH, Edge-Trigged)
Select A to B Source Input
Direction Control Input
A data Inputs/Outputs
B Data Inputs/Outputs
Output Enable Input (Active LOW)
Select B to A Source Input
B to A Clock Input (LOW to HIGH, Edge-Triggered)
Ground (0V)
Positive Supply Voltage
IEC LOGIC SYMBOLS
HCT646
4/12
HCT648
M74HCT646/648
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
VCC
VI
Supply Voltage
DC Input Voltage
-0.5 to +7
-0.5 to VCC + 0.5
V
V
VO
DC Output Voltage
-0.5 to VCC + 0.5
V
IIK
IOK
DC Input Diode Current
DC Output Diode Current
± 20
± 20
mA
mA
IO
DC Output Source Sink Current Per Output Pin
± 35
mA
DC VCC or Ground Current
± 70
mA
500 (*)
mW
ICC or IGND
Parameter
PD
Power Dissipation
Tstg
TL
Storage Temperature
Lead Temperature (10 sec)
-65 to +150
300
o
o
C
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition isnotimplied.
(*) 500 mW: ≅ 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Parameter
Supply Voltage
VI
Input Voltage
VO
Top
Output Voltage
Operating Temperature
tr, tf
Input Rise and Fall Time (VCC = 4.5 to 5.5V)
Value
4.5 to 5.5
Unit
V
0 to VCC
V
0 to VCC
-40 to +85
0 to 500
V
C
o
ns
5/12
M74HCT646/648
DC SPECIFICATIONS
Test Conditions
Symbol
Parameter
TA = 25 oC
Min. Typ. Max.
2.0
VIH
High Level Input Voltage
4.5
to
5.5
V IL
Low Level Input
Voltage
4.5
to
5.5
V OH
High Level Output Voltage
VOL
4.5
4.5
VI = IO= 20 µA
VIH IO= 6.0 mA
or
V IL
5.5
VI = VCC or GND
VI = VCC or GND
II
Input Leakage Current (*)
ICC
Quiescent Supply Current
5.5
IOZ
Output Off-state Current
5.5 VO = VCC or GND
VI = VIH or V IL
∆ICC
Additional worst case supply
current
5.5
6/12
-40 to 85 oC
Min. Max.
2.0
0.8
VI = IO=-20 µA
VIH IO=-6.0 mA
or
V IL
Low Level Output Voltage
(*): Applicable only to DIR, G, CAB, CBA, SBA input.
Value
VCC
(V)
Per Input pin
VI = 0.5V or
V I = 2.4V
Other Inputs at
V CC or GND
IO= 0
4.4
4.5
4.4
4.31
4.13
0.0
0.17
V
0.8
4.18
Unit
V
V
0.1
0.26
0.1
0.33
V
±0.1
±1
µA
4
40
µA
æ0.5
±5
µA
2.0
2.9
mA
M74HCT646/648
AC ELECTRICAL CHARACTERISTICS (C L = 50 pF, Input t r = tf = 6 ns)
Test Conditions
Value
TA = 25 C
-40 to 85 oC
54HC and 74HC
74HC
o
Symbol
Parameter
VCC
(V)
CL
(pF)
Min.
Typ.
Max.
Min.
Unit
Max.
tTLH
tTHL
tPLH
tPHL
Output Transition Time
4.5
50
7
12
15
Propagation Delay Time
(BUS - BUS)
4.5
50
20
30
38
ns
tPLH
tPHL
Propagation Delay Time
(CLOCK - BUS)
4.5
4.5
150
50
25
29
38
44
48
55
ns
ns
tPLH
tPHL
Propagation Delay Time
(SELECT - BUS)
4.5
4.5
4.5
150
50
150
34
24
29
52
34
42
65
43
53
ns
ns
ns
tPZL
tPZH
3-State Output Enable Time
(G, DIR - BUS)
tPLZ
tPHZ
fMAX
3-State Output Disable Time
(G, DIR - BUS)
Maximum Clock Frequency
4.5
4.5
4.5
50
150
50
26
31
26
38
46
35
48
58
44
ns
ns
ns
4.5
50
tW(H)
tW(L)
ts
th
Minimum Pulse Width
4.5
50
8
15
19
ns
Minimum Set-up Time
Minimum Hold Time
4.5
4.5
50
50
3
10
5
13
5
ns
ns
CIN
CI/O
Input Capacitance
Bus Terminal Capacitance
5
13
10
10
pF
pF
CPD (*)
Power Dissipation Capacitance
RL = 1 KΩ
RL = 1 KΩ
RL = 1 KΩ
for HCT646
for HCT648
31
55
40
39
25
ns
MHz
pF
(*) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load.
(Refer to Test Circuit). Average operting current can be obtained by the following equation. ICC(opr) = CPD •VCC •fIN + ICC/8 (per bit)
7/12
M74HCT646/648
SWITCHING CHARACTERISTICS TEST CIRCUIT AND WAVEFORM
WAVEFORM 1
WAVEFORM 2
WAVEFORM 3
WAVEFORM 4
WAVEFORM 5
8/12
M74HCT646/648
TEST WAVEFORM ICC (Opr.)
* INPUT TRANSITION TIME IS THE SAME AS THAT IN CASE OF SWITCHING CHARACTERISTICSTEST.
9/12
M74HCT646/648
Plastic DIP24 (0.25) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
a1
0.63
0.025
b
0.45
0.018
b1
0.23
b2
0.31
1.27
D
E
0.009
0.012
0.050
32.2
15.2
16.68
1.268
0.598
0.657
e
2.54
0.100
e3
27.94
1.100
F
MAX.
14.1
0.555
I
4.445
0.175
L
3.3
0.130
P043A
10/12
M74HCT646/648
SO24 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
A
a1
MIN.
TYP.
MAX.
2.65
0.10
0.104
0.20
a2
0.004
0.007
2.45
0.096
b
0.35
0.49
0.013
0.019
b1
0.23
0.32
0.009
0.012
C
0.50
0.020
c1
45° (typ.)
D
15.20
15.60
0.598
0.614
E
10.00
10.65
0.393
0.420
e
1.27
0.05
e3
13.97
0.55
F
7.40
7.60
0.291
0.299
L
0.50
1.27
0.19
0.050
S
8° (max.)
L
s
e3
b1
e
a1
b
A
a2
C
c1
E
D
13
1
12
F
24
11/12
M74HCT646/648
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
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