Schottky Barrier Diodes (SBD) MA2SD24 Silicon epitaxial planar type Unit: mm For super high speed switching 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 1.20+0.05 –0.03 (0.60) 0.80±0.05 0.01±0.01 5˚ (0.60) (0.80) • Forward current (Average) IF(AV) = 200 mA rectification is possible • Small reverse current IR 2 0.30±0.05 ■ Absolute Maximum Ratings Ta = 25°C Repetitive peak reverse voltage Peak forward current Symbol Rating Unit VR 20 V VRRM 20 V IFM 300 mA Forward current (Average) IF(AV) 200 mA Non-repetitive peak forward surge current * IFSM 1 A Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C (0.15) Reverse voltage 0+0 –0.05 5˚ 0.01±0.01 Parameter 1.60±0.05 1 ■ Features 1: Anode 2: Cathode EIAJ: SC-79 SSMini2-F1 Package Marking Symbol: 5L Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 200 mA 0.50 0.58 V Reverse current IR VR = 10 V 0.1 1.0 µA Terminal capacitance Ct VR = 0 V, f = 1 MHz 25 pF Reverse recovery time * trr IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 3 ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 250 MHz. 4. *: trr measurement circuit Bias Application Unit (N-50BU) Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω Publication date: April 2004 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Wave Form Analyzer (SAS-8130) Ri = 50 Ω SKH00028BED Output Pulse t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω 1 MA2SD24 IF V F IR V R 103 Ct VR 103 Ta = 25°C 1 10−1 10−2 10−3 75°C 1 10−1 25°C 10−2 0 0.2 0.4 Forward voltage VF (V) 2 10 0.6 10−3 0 10 20 Reverse voltage VR (V) SKH00028BED Terminal capacitance Ct (pF) Ta = 125°C 75°C 25°C 10 30 102 Ta = 125°C Reverse current IR (µA) Forward current IF (mA) 102 20 10 0 0 10 20 Reverse voltage VR (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. 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