Order this document by MC12147/D
The MC12147 is intended for applications requiring high frequency signal
generation up to 1300 MHz. An external tank circuit is used to determine the
desired frequency of operation. The VCO is realized using an
emitter–coupled pair topology. The MC12147 can be used with an integrated
PLL IC such as the MC12202 1.1 GHz Frequency Synthesizer to realize a
complete PLL sub–system. The device is specified to operate over a voltage
supply range of 2.7 to 5.5 V. It has a typical current consumption of 13 mA at
3.0 V which makes it attractive for battery operated handheld systems.
LOW POWER
VOLTAGE CONTROLLED
OSCILLATOR BUFFER
SEMICONDUCTOR
TECHNICAL DATA
NOTE: The MC12147 is NOT suitable as a crystal oscillator.
•
•
•
•
•
•
•
Operates Up to 1.3 GHz
Space–Efficient 8–Pin SOIC or SSOP Package
8
Low Power 13 mA Typical @ 3.0 V Operation
1
Supply Voltage of 2.7 to 5.5 V
D SUFFIX
PLASTIC PACKAGE
CASE 751
(SO–8)
Typical 900MHz Performance
– Phase Noise –105 dBc/Hz @ 100 kHz Offset
– Tuning Voltage Sensitivity of 20 MHz/V
Output Amplitude Adjustment Capability
Two High Drive Outputs With a Typical Range from –8.0 to –2.0 dBm
The device has two high frequency outputs which make it attractive for
transceiver applications which require both a transmit and receive local
oscillator (LO) signal. The outputs Q and QB are available for servicing the
receiver IF and transmitter up–converter single–ended. In receiver
applications, the outputs can be used together if it is necessary to generate a
differential signal for the receiver IF. Because the Q and QB outputs are open
collector, terminations to the VCC supply are required for proper operation.
Since the outputs are complementary, BOTH outputs must be terminated
even if only one is needed. The Q and QB outputs have a nominal drive level
of –8dBm to conserve power. If addition signal amplitude is needed, a level
adjustment pin (CNTL) is available, which when tied to ground, boosts the
nominal output levels to –2.0 dBm.
External components required for the MC12147 are: (1) tank circuit (LC
network); (2) Inductor/capacitor to provide the termination for the open
collector outputs; and (3) adequate supply voltage bypassing. The tank
circuit consists of a high–Q inductor and varactor components. The
preferred tank configuration allows the user to tune the VCO across the full
supply range. VCO performance such as center frequency, tuning voltage
sensitivity, and noise characteristics are dependent on the particular
components and configuration of the VCO tank circuit.
8
1
SD SUFFIX
PLASTIC PACKAGE
CASE 940
(SSOP–8)
PIN CONNECTIONS
NC
Q
GND
QB
8
7
6
5
2
3
1
VCC
Pin
4
VREF
(Top View)
PIN NAMES
VCC
CNTL
TANK
VREF
QB
GND
Q
CNTL TANK
Function
Power Supply
Amplitude Control for Q, QB Output Pair
Tank Circuit Input
Bias Voltage Output
Open Collector Output
Ground
Open Collector Output
ORDERING INFORMATION
Device
MC12147D
MC12147SD
Operating
Temperature Range
TA = – 40° to +85°C
Motorola, Inc. 1997
Package
SO–8
SSOP–8
Rev 2
MC12147
MAXIMUM RATINGS (Note 1)
Parameter
Power Supply Voltage, Pin 1
Operating Temperature Range
Storage Temperature Range
Maximum Output Current, Pin 5,7
Symbol
Value
Unit
VCC
-0.5 to +7.0
V
TA
–40 to +85
°C
TSTG
-65 to +150
°C
IO
12
mA
NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
2. ESD data available upon request.
ELECTRICAL CHARACTERISTICS (VCC = 2.7 to 5.5 VDC, TA = -40 to 85°C, unless otherwise noted.)
Symbol
Min
Typ
Max
Unit
Supply Current (CNTL=GND)VCC = 3.3 V
VCC = 5.5 V
ICC
–
–
14.0
23.5
18
28
mA
Supply Current (CNTL=OPEN)VCC = 3.3 V
VCC = 5.5 V
ICC
–
–
8
13
13.0
22.5
mA
Output Amplitude (Pin 5 & 7) {Note 1]
VCC = 2.7 V
50Ω to VCC
VCC = 2.7 V
VOH,
VOL
2.6
2.1
2.7
2.3
–
2.4
Output Amplitude (Pin 5 & 7) [Note 1]
VCC = 5.5 V
50Ω to VCC
VCC = 5.5 V
VOH,
VOL
5.4
4.8
5.5
5.0
–
5.1
Tstg
FC
–
20
–
MHz/V
100
–
1300
MHz
–
–85
–
dBc/Hz
–
–105
–
dBc/Hz
–
–
0.8
50
–
–
MHz/V
KHz/°C
Characteristic
Tuning Voltage Sensitivity [Notes 2 and 3]
Frequency of Operation
CSR at 10 kHz Offset, 1.0 Hz BW [Notes 2 and 3]
CSR at 100 kHz Offset, 1.0 Hz BW [Notes 2 and 3]
Frequency Stability [Notes 2 and 3]
Supply Drift
Thermal Drift
V
V
L(f)
L(f)
Fsts
fstt
NOTES: 1. CNTL pin tied to ground.
2. Actual performance depends on tank components selected.
3. See Figure 12, 750 MHz tank.
4. T = 25°C, VCC = 5.0 V ±10%
2
MOTOROLA RF/IF DEVICE DATA
MC12147
OPERATIONAL CHARACTERISTICS
A simplified schematic of the MC12147 is found in
Figure 1. The oscillator incorporates positive feedback by
coupling the base of transistor Q2 to the collector of transistor
Q1. In order to minimize interaction between the VCO
outputs and the oscillator tank transistor pair, a buffer is
incorporated into the circuit. This differential buffer is realized
by the Q3 and Q4 transistor pair. The differential buffer drives
the gate which contains the primary open collector outputs, Q
and QB. The output is actually a current which has been set
by an internal bias driver to a nominal current of 4mA.
Additional circuitry is incorporated into the tail of the current
source which allows the current source to be increased to
approximately 10mA. This is accommodated by the addition
of a resistor which is brought out to the CNTL pin. When this
pin is tied to ground, the additional current is sourced through
the current source thus increasing the output amplitude of the
Q/QB output pair. If less than 10 mA of current is needed, a
resistor can be added to ground which reduces the amount of
current.
APPLICATION INFORMATION
Figure 2 illustrates the external components necessary for
the proper operation of the VCO buffer. The tank circuit
configuration in this figure allows the VCO to be tuned across
the full operating voltage of the power supply. This is very
important in 3V applications where it is desirable to utilize as
much of the operating supply range as possible so as to
minimize the VCO sensitivity (MHz/V). In most situations, it is
desirable to keep the sensitivity low so the circuit will be less
susceptible to external noise influences. An additional benefit
to this configuration is that additional regulation/ filtering can
be incorporated into the VCC line without compromising the
tuning range of the VCO. With the AC–coupled tank
configuration, the Vtune voltage can be greater than the VCC
voltage supplied to the device.
There are four main areas that the user directly influences
the performance of the VCO. These include Tank Design,
Output Termination Selection, Power Supply Decoupling,
and Circuit Board Layout/Grounding.
The design of the tank circuit is critical to the proper
operation of the VCO. This tank circuit directly impacts the
main VCO operating characteristics:
1)
2)
3)
4)
Frequency of Operation
Tuning Sensitivity
Voltage Supply Pushing
Phase Noise Performance
The tank circuit, in its simplest form, is realized as an LC
circuit which determines the VCO operating frequency. This
is described in Equation 1.
fo
+ Ǹ1
2p LC
Equation 1
In the practical case, the capacitor is replaced with a
varactor diode whose capacitance changes with the voltage
applied, thus changing the resonant frequency at which the
VCO tank operates. The capacitive component in Equation 1
also needs to include the input capacitance of the device and
other circuit and parasitic elements. Typically, the inductor is
realized as a surface mount chip or a wound–coil. In addition,
the lead inductance and board inductance and capacitance
also have an impact on the final operating point.
Figure 1. Simplified Schematic
VCC
Q3
Q4
TANK
VREF
Q1
Q
QB
Q5
Q6
Q2
VREF
136Ω
CNTL
200Ω
GND
MOTOROLA RF/IF DEVICE DATA
3
MC12147
Figure 2. MC12147 Typical External Component Connections
VCC Supply
C3a
C3a
VCC
1
8
CNTL
Q
2
7
C2a
Note 1
R1
C2a
3
LT
CV
Cb
VREF
4
C6a
VCO Output
GND
TANK
C1
Vin
L2a
6
VCO
QB
L2b
C6b
VCO Output
5
1. This input can be left open, tied to ground, or tied with a resistor to ground, depending
on the desired output amplitude needed at the Q and QB output pair.
2. Typical values for R1 range from 5.0 kΩ to 10 kΩ.
A simplified linear approximation of the device, package,
and typical board parasitics has been developed to aid the
designer in selecting the proper tank circuit values. All the
parasitic contributions have been lumped into a parasitic
capacitive component and a parasitic inductive component.
While this is not entirely accurate, it gives the designer a solid
starting point for selecting the tank components.
Below are the parameters used in the model.
Cp
Lp
LT
C1
Cb
CV
Parasitic Capacitance
Parasitic Inductance
Inductance of Coil
Coupling Capacitor Value
Capacitor for decoupling the Bias Pin
Varactor Diode Capacitance (Variable)
The values for these components are substituted into the
following equations:
Ci
C1 CV ) Cp
+ C1
) CV
Equation 2
C
Cb
+ CiCi ) Cb
Equation 3
L=
Lp + LT
Equation 4
From Figure 2, it can be seen that the varactor
capacitance (CV) is in series with the coupling capacitor
(C1). This is calculated in Equation 2. For analysis purposes,
the parasitic capacitances (CP) are treated as a lumped
element and placed in parallel with the series combination of
C1 and CV. This compound capacitance (Ci) is in series with
the bias capacitor (Cb) which is calculated in Equation 3. The
influences of the various capacitances; C1, CP, and Cb,
impact the design by reducing the variable capacitance
effects of the varactor which controls the tank resonant
frequency and tuning range.
4
Now the results calculated from Equation 2, Equation 3
and Equation 4 can be substituted into Equation 1 to
calculate the actual frequency of the tank.
To aid in analysis, it is recommended that the designer use
a simple spreadsheet based on Equation 1 through
Equation 4 to calculate the frequency of operation for various
varactor/inductor selections before determining the initial
starting condition for the tank.
The two main components at the heart of the tank are the
inductor (LT) and the varactor diode (CV). The capacitance of
a varactor diode junction changes with the amount of reverse
bias voltage applied across the two terminals. This is the
element which actually “tunes” the VCO. One characteristic
of the varactor is the tuning ratio which is the ratio of the
capacitance at specified minimum and maximum voltage
points. For characterizing the MC12147, a Matsushita
(Panasonic) varactor – MA393 was selected. This device has
a typical capacitance of 11 pF at 1V and 3.7 pF at 4V and the
C–V characteristic is fairly linear over that range. Similar
performance was also acheived with Loral varactors. A
multi–layer chip inductor was used to realize the LT
component. These inductors had typical Q values in the
35–50 range for frequencies between 500 and 1000MHz.
Note: There are many suppliers of high performance
varactors and inductors an Motorola can not recommend one
vendor over another.
The Q (quality factor) of the components in the tank circuit
has a direct impact on the resulting phase noise of the
oscillator. In general, the higher the Q, the lower the phase
noise of the resulting oscillator. In addition to the LT and CV
components, only high quality surface–mount RF chip
capacitors should be used in the tank circuit. These
capacitors should have very low dielectric loss (high–Q). At a
minimum, the capacitors selected should be operating 100
MHz below their series resonance point. As the desired
frequency of operation increases, the values of the C1 and
Cb capacitors will decrease since the series resonance point
MOTOROLA RF/IF DEVICE DATA
MC12147
is a function of the capacitance value. To simplify the
selection of C1 and Cb, a table has been constructed based
on t he int ende d o p e ra ti n g fre q u e n c y to prov i de
recommended starting points. These may need to be altered
depending on the value of the varactor selected.
Frequency
C1
Cb
200 – 500 MHz
47 pF
47 pF
500 – 900 MHz
5.1 pF
15 pF
900 – 1200 MHz
2.7 pF
15 pF
The value of the Cb capacitor influences the VCO supply
pushing. To minimize pushing, the Cb capacitor should be
kept small. Since C1 is in series with the varactor, there is a
strong relationship between these two components which
influences the VCO sensitivity. Increasing the value of C1
tends to increase the sensitivity of the VCO.
The parasitic contributions Lp and Cp are related to the
MC12147 as well as parasitics associated with the layout,
tank components, and board material selected. The input
capacitance of the device, bond pad, the wire bond,
package/lead capacitance, wire bond inductance, lead
inductance, printed circuit board layout, board dielectric, and
proximity to the ground plane all have an impact on these
parasitics. For example, if the ground plane is located directly
below the tank components, a parasitic capacitor will be
formed consisting of the solder pad, metal traces, board
dielectric material, and the ground plane. The test fixture
used for characterizing the device consisted of a two sided
copper clad board with ground plane on the back. Nominal
values where determined by selecting a varactor and
characterizing the device with a number of different tank/
frequency combinations and then performing a curve fit with
the data to determine values for Lp and Cp. The nominal
values for the parasitic effects are seen below:
Parasitic Capacitance
Parasitic Inductance
Cp
Lp
4.2 pF
2.2 nH
10. Perform worst case analysis of tank component
variation to insure proper VCO operation over full
temperature and voltage range and make any
adjustments as needed.
Outputs Q and QB are open collector outputs and need a
inductor to VCC to provide the voltage bias to the output
transistor. In most applications, dc–blocking capacitors are
placed in series with the output to remove the dc component
before interfacing to other circuitry. These outputs are
complementary and should have identical inductor values for
each output. This will minimize switching noise on the VCC
supply caused by the outputs switching. It is important that
both outputs be terminated, even if only one of the outputs is
used in the application.
Referring to Figure 2, the recommended value for L2a and
L2b should be 47 nH and the inductor components
resonance should be at least 300 MHz greater than the
maximum operating frequency. For operation above 1100
MHz, it may be necessary to reduce that inductor value to 33
nH. The recommended value for the coupling capacitors
C6a, C6b, and C7 is 47 pF. Figure 2 also includes decoupling
capacitors for the supply line as well as decoupling for the
output inductors. Good RF decoupling practices should be
used with a series of capacitors starting with high quality 100
pF chip capacitors close to the device. A typical layout is
shown below in Figure 3.
The output amplitude of the Q and QB can be adjusted
using the CNTL pin. Refering to Figure 1, if the CNTL pin is
connected to ground, additional current will flow through the
current source. When the pin is left open, the nominal current
flowing through the outputs is 4 mA. When the pin is
grounded, the current increases to a nominal value of 10 mA.
So if a 50 ohm resistor was connected between the outputs
and VCC, the output amplitude would change from 200 mV
pp to 500 mV pp with an additional current drain for the
device of 6 mA. To select a value between 4 and 10 mA, an
external resistor can be added to ground. The equation below
is used to calculate the current.
Iout(nom)
These values will vary based on the users unique circuit
board configuration.
Basic Guidelines:
1. Select a varactor with high Q and a reasonable
capacitance versus voltage slope for the desired
frequency range.
2. Select the value of Cb and C1 from the table above .
3. Calculate a value of inductance (L) which will result in
achieving the desired center frequency. Note that L
includes both LT and Lp.
4. Adjust the value of C1 to achieve the proper VCO
sensitivity.
5. Re–adjust value of L to center VCO.
6. Prototype VCO design using selected components. It
is important to use similar construction techniques and
materials, board thickness, layout, ground plane
spacing as intended for the final product.
7. Characterize tuning curve over the voltage operation
conditions.
8. Adjust, as necessary, component values – L,C1, and
Cb to compensate for parasitic board effects.
9. Evaluate over temperature and voltage limits.
MOTOROLA RF/IF DEVICE DATA
+
) 136 ) Rext) 0.8V
200 (136 ) Rext)
(200
Figure 4 through Figure 13 illustrate typical performance
achieved with the MC12147. The curves illustrate the tuning
curve, supply pushing characteristics, output power, current
drain, output spectrum, and phase noise performance. In
most cases, data is present for both a 750 MHz and 1200
MHz tank design. The table below illustrates the component
values used in the designs.
Component
750MHz Tank
1200MHz Tank
Units
R1
5000
5000
Ω
C1
5.1
2.7
pF
LT
4.7
1.8
nH
CV
3.7 @ 1.0 V
11 @ 4.0 V
3.7 @ 1.0 V
11 @ 4.0 V
pF
Cb
100*
15
pF
C6, C7
47
33
pF
L2
47
47
nH
* The value of Cb should be reduced to minimize pushing.
5
MC12147
Figure 3. MC12147 Typical Layout
(Not to Scale)
ÇÇ
ÇÇ
ÇÇ
C3a
C2a
VCO Output 1
1
R2
R1
ÇÇÇÇÇ
ÇÇÇÇÇ
ÇÇÇÇÇ
C1
Vtune
LT
Varactor
C6a
L2a
C3b
L2b
C2b
Cb
VCO Output 2
C6b
ÇÇÇ
ÇÇÇ
ÇÇÇ
= Via to/or Ground Plane
= Via to/or Power Plane
6
MOTOROLA RF/IF DEVICE DATA
MC12147
Figure 4. Typical VCO Tuning Curve, 750 MHz Tank
850
825
Frequency of Operation (MHz)
800
775
750
725
700
–40°C
+25°C
+85°C
675
650
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Tuning Voltage (V)
Figure 5. Typical Supply Pushing, 750MHz Tank
750
748
Frequency of Operation (MHz)
746
744
742
740
738
736
734
–40°C
+25°C
+85°C
732
730
2.7
3.0
3.3
3.6
3.9
4.2
4.5
4.8
5.1
5.4
VCC Supply Voltage (V)
MOTOROLA RF/IF DEVICE DATA
7
MC12147
Figure 6. Typical Q/QB Output Power versus Supply, 750 MHz Tank
0
–1
–2
Output Power (dBm)
–3
–4
–40°C
+25°C
+85°C
+25°C (LP)
CNTL to GND
–5
–6
–7
–8
–9
CNTL–N/C
–10
2.7
3.0
3.3
3.6
3.9
4.2
4.5
4.8
5.0
VCC Supply Voltage (V)
Figure 7. Typical Current Drain versus Supply, 750 MHz Tank
25
Current Drain (mA)
20
15
CNTL to GND
–40°C
+25°C
+85°C
+25°C (LP)
10
CNTL–N/C
5
2.7
3.0
3.3
3.6
3.9
4.2
4.5
4.8
5.1
5.4
VCC Supply Voltage (V)
8
MOTOROLA RF/IF DEVICE DATA
MC12147
Figure 8. Typical VCO Tuning Curve, 1200 MHz Tank
(VCC = 5.0 V)
1300
Frequency of Operation (MHz)
1275
1250
1225
1200
1175
–40°C
+25°C
+85°C
1150
0
0.6
1.2
1.8
2.4
3.0
3.6
4.2
4.8
Tuning Voltage (V)
Figure 9. Typical Supply Pushing, 1200 MHz Tank
1210
1208
Frequency of Operation (MHz)
1206
1204
1202
1200
1198
1196
1194
–40°C
+25°C
+85°C
1192
1190
2.7
3.0
3.3
3.6
3.9
4.2
4.5
4.8
5.1
5.4
VCC Supply Voltage (V)
MOTOROLA RF/IF DEVICE DATA
9
MC12147
Figure 10. Q/QB Output Power versus Supply, 1200 MHz Tank
2
1
Output Power (dBm)
0
–1
–2
–3
–40°C
+25°C
+85°C
–4
2.7
3.0
3.3
3.6
3.9
4.2
4.5
4.8
5.0
VCC Supply Voltage (V)
Figure 11. Typical VCO Output Spectrum
ATTEN 10
RL 0dBm
10dB/
MARKER
909MHz –7.1dBm
0
–10
–20
AMPLITUDE (dBm)
–30
–40
–50
–60
–70
–80
–90
–100
START 1.0MHz
RBW 1.0MHz
10
VBW 1.0MHz
STOP 10.0GHz
SWP 200ms
MOTOROLA RF/IF DEVICE DATA
MC12147
Figure 12. Typical Phase Noise Plot, 750 MHz Tank
HP 3048A
CARRIER
784.2MHz
0
–25
–50
dBc/Hz
–75
–100
–125
–150
–170
100
1K
10K
100K
1M
10M
40M
10M
40M
L(f) [dBc/Hz] vs f[Hz]
Figure 13. Typical Phase Noise Plot, 1200 MHz Tank
HP 3048A
CARRIER
1220MHz
0
–25
dBc/Hz
–50
–75
–100
–125
–150
–170
100
1K
10K
100K
1M
L(f) [dBc/Hz] vs f[Hz]
MOTOROLA RF/IF DEVICE DATA
11
MC12147
OUTLINE DIMENSIONS
D SUFFIX
PLASTIC PACKAGE
CASE 751–06
(SO–8)
ISSUE T
D
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. DIMENSIONS ARE IN MILLIMETER.
3. DIMENSION D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE B DIMENSION AT MAXIMUM MATERIAL
CONDITION.
C
8
5
0.25
H
E
B
M
M
1
4
h
B
X 45 _
q
e
DIM
A
A1
B
C
D
E
e
H
h
L
A
C
SEATING
PLANE
L
0.10
A1
B
0.25
C B
M
A
S
S
q
MILLIMETERS
MIN
MAX
1.35
1.75
0.10
0.25
0.35
0.49
0.19
0.25
4.80
5.00
3.80
4.00
1.27 BSC
5.80
6.20
0.25
0.50
0.40
1.25
0_
7_
SD SUFFIX
PLASTIC PACKAGE
CASE 940-03
(SSOP–8)
ISSUE B
8X
K REF
0.12 (0.005)
0.25 (0.010)
M
T U
S
V
N
S
M
8
L/2
N
5
F
B
L
DETAIL E
PIN 1
IDENT
1
4
ÉÉÉÉ
ÇÇÇÇ
ÇÇÇÇ
ÉÉÉÉ
K
–U–
A
–V–
0.20 (0.008)
M
T U
J
J1
K1
S
SECTION N–N
0.076 (0.003)
–T–
SEATING
PLANE
–W–
C
D
G
12
H
DETAIL E
NOTES:
1 DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2 CONTROLLING DIMENSION: MILLIMETER.
3 DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH
OR GATE BURRS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4 DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.15 (0.006)
PER SIDE.
5 DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION/INTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.13 (0.005) TOTAL IN
EXCESS OF K DIMENSION AT MAXIMUM
MATERIAL CONDITION. DAMBAR INTRUSION
SHALL NOT REDUCE DIMENSION K BY MORE
THAN 0.07 (0.002) AT LEAST MATERIAL
CONDITION.
6 TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7 DIMENSION A AND B ARE TO BE DETERMINED
AT DATUM PLANE –W–.
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
MIN
MAX
2.87
3.13
5.20
5.38
1.73
1.99
0.05
0.21
0.63
0.95
0.65 BSC
0.44
0.60
0.09
0.20
0.09
0.16
0.25
0.38
0.25
0.33
7.65
7.90
0_
8_
INCHES
MIN
MAX
0.113
0.123
0.205
0.212
0.068
0.078
0.002
0.008
0.024
0.037
0.026 BSC
0.017
0.023
0.003
0.008
0.003
0.006
0.010
0.015
0.010
0.013
0.301
0.311
0_
8_
MOTOROLA RF/IF DEVICE DATA
MC12147
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
Mfax is a trademark of Motorola, Inc.
How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;
P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447
JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141,
4–32–1 Nishi–Gotanda, Shagawa–ku, Tokyo, Japan. 03–5487–8488
Customer Focus Center: 1–800–521–6274
Mfax: [email protected] – TOUCHTONE 1–602–244–6609
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
Motorola Fax Back System
– US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
– http://sps.motorola.com/mfax/
HOME PAGE: http://motorola.com/sps/
MOTOROLA RF/IF DEVICE DATA◊
MC12147/D
13