SEMICONDUCTOR TECHNICAL DATA L SUFFIX CERAMIC CASE 620 The MC14572UB hex functional gate is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is desired. The chip contains four inverters, one NOR gate and one NAND gate. • • • • • • • • Diode Protection on All Inputs Single Supply Operation Supply Voltage Range = 3.0 Vdc to 18 Vdc NOR Input Pin Adjacent to VSS Pin to Simplify Use As An Inverter NAND Input Pin Adjacent to VDD Pin to Simplify Use As An Inverter NOR Output Pin Adjacent to Inverter Input Pin For OR Application NAND Output Pin Adjacent to Inverter Input Pin For AND Application Capable of Driving Two Low–power TTL Loads or One Low–Power Schottky TTL Load over the Rated Temperature Range ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS* (Voltages Referenced to VSS) Symbol VDD Parameter DC Supply Voltage Value Unit – 0.5 to + 18.0 V Vin, Vout Input or Output Voltage (DC or Transient) – 0.5 to VDD + 0.5 V Iin, Iout Input or Output Current (DC or Transient), per Pin ± 10 mA PD Power Dissipation, per Package† Tstg Storage Temperature TL Lead Temperature (8–Second Soldering) 500 mW – 65 to + 150 _C 260 _C * Maximum Ratings are those values beyond which damage to the device may occur. †Temperature Derating: Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C Ceramic “L” Packages: – 12 mW/_C From 100_C To 125_C CIRCUIT SCHEMATIC VDD P SUFFIX PLASTIC CASE 648 D SUFFIX SOIC CASE 751B ORDERING INFORMATION MC14XXXUBCP MC14XXXUBCL MC14XXXUBD Plastic Ceramic SOIC TA = – 55° to 125°C for all packages. LOGIC DIAGRAM 2 1 4 3 6 5 7 10 9 12 11 VDD VDD 7 2 1 13 14 13 15 6 5 VSS VDD = PIN 16 VSS = PIN 8 14 15 VSS VSS REV 3 1/94 MOTOROLA Motorola, Inc. 1995 CMOS LOGIC DATA MC14572UB 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS) Characteristic Symbol – 55_C 25_C 125_C VDD Vdc Min Max Min Typ # Max Min Max Unit Output Voltage Vin = VDD or 0 “0” Level VOL 5.0 10 15 — — — 0.05 0.05 0.05 — — — 0 0 0 0.05 0.05 0.05 — — — 0.05 0.05 0.05 Vdc Vin = 0 or VDD “1” Level VOH 5.0 10 15 4.95 9.95 14.95 — — — 4.95 9.95 14.95 5.0 10 15 — — — 4.95 9.95 14.95 — — — Vdc 5.0 10 15 — — — 1.0 2.0 2.5 — — — 2.25 4.50 6.75 1.0 2.0 2.5 — — — 1.0 2.0 2.5 5.0 10 15 4.0 8.0 12.5 — — — 4.0 8.0 12.5 2.75 5.50 8.25 — — — 4.0 8.0 12.5 — — — 5.0 5.0 10 15 – 1.2 – 0.25 – 0.62 – 1.8 — — — — – 1.0 – 0.2 – 0.5 – 1.5 – 1.7 – 0.36 – 0.9 – 3.5 — — — — – 0.7 – 0.14 – 0.35 – 1.1 — — — — IOL 5.0 10 15 0.64 1.6 4.2 — — — 0.51 1.3 3.4 0.88 2.25 8.8 — — — 0.36 0.9 2.4 — — — mAdc Input Current Iin 15 — ± 0.1 — ± 0.00001 ± 0.1 — ± 1.0 µAdc Input Capacitance (Vin = 0) Cin — — — — 5.0 7.5 — — pF Quiescent Current (Per Package) IDD 5.0 10 15 — — — 0.25 0.5 1.0 — — — 0.0005 0.0010 0.0015 0.25 0.5 1.0 — — — 7.5 15 30 µAdc IT 5.0 10 15 Input Voltage “0” Level (VO = 4.5 or 0.5 Vdc) (VO = 9.0 or 1.0 Vdc) (VO = 13.5 or 1.5 Vdc) VIL “1” Level VIH (VO = 0.5 or 4.5 Vdc) (VO = 1.0 or 9.0 Vdc) (VO = 1.5 or 13.5 Vdc) Output Drive Current (VOH = 2.5 Vdc) (VOH = 4.6 Vdc) (VOH = 9.5 Vdc) (VOH = 13.5 Vdc) (VOL = 0.4 Vdc) (VOL = 0.5 Vdc) (VOL = 1.5 Vdc) Vdc Vdc IOH Source Sink Total Supply Current**† (Dynamic plus Quiescent, Per Package) (CL = 50 pF on all outputs, all buffers switching) mAdc IT = (1.89 µA/kHz) f + IDD IT = (3.80 µA/kHz) f + IDD IT = (5.68 µA/kHz) f + IDD µAdc #Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. ** The formulas given are for the typical characteristics only at 25_C. †To calculate total supply current at loads other than 50 pF: IT(CL) = IT(50 pF) + (CL – 50) Vfk where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.006. This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, Vin and Vout should be constrained to the range VSS ≤ (Vin or Vout) ≤ VDD. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). Unused outputs must be left open. MC14572UB 2 PIN ASSIGNMENT OUTA 1 16 VDD INA 2 15 IN 2F OUTB 3 14 IN 1F INB 4 13 OUTF OUTC 5 12 INE IN 1C 6 11 OUTE IN 2C 7 10 IND VSS 8 9 OUTD MOTOROLA CMOS LOGIC DATA ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ SWITCHING CHARACTERISTICS* (CL = 50 pF, TA = 25_C) Characteristic Symbol Output Rise Time tTLH = (3.0 ns/pF) CL + 30 ns tTLH = (1.5 ns/pF) CL + 15 ns tTLH = (1.1 ns/pF) CL + 10 ns tTLH Output Fall Time tTHL = (1.5 ns/pF) CL + 25 ns tTHL = (0.75 ns/pF) CL + 12.5 ns tTHL = (0.55 ns/pF) CL + 9.5 ns tTHL Propagation Delay Time tPLH, tPHL = (1.7 ns/pF) CL + 5 ns tPLH, tPHL = (0.66 ns/pF) CL + 17 ns tPLH, tPHL = (0.5 ns/pF) CL + 15 ns tPLH, tPHL VDD Min Typ # Max 5.0 10 15 — — — 180 90 65 360 180 130 5.0 10 15 — — — 100 50 40 200 100 80 5.0 10 15 — — — 90 50 40 180 100 80 Unit ns ns ns * The formulas given are for the typical characteristics only at 25_C. #Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. VDD VDD PULSE GENERATOR INPUT 7 16 INPUT 2 PULSE GENERATOR OUTPUT 16 6 OUTPUT 1 8 VSS 5 CL 8 VSS CL VDD 20 ns 16 PULSE GENERATOR INPUT 15 INPUT 14 OUTPUT VSS 90% 50% 10% tPHL 13 8 90% 50% 10% CL OUTPUT 20 ns VDD VSS tPLH 90% 50% 10% 90% 50% 10% tf tr VOH VOL Figure 1. Switching Time Test Circuits and Waveforms MOTOROLA CMOS LOGIC DATA MC14572UB 3 OUTLINE DIMENSIONS L SUFFIX CERAMIC DIP PACKAGE CASE 620–10 ISSUE V –A– 16 9 1 8 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 4. DIMENSION F MAY NARROW TO 0.76 (0.030) WHERE THE LEAD ENTERS THE CERAMIC BODY. –B– C L DIM A B C D E F G H K L M N –T– K N SEATING PLANE M E F J G D 16 PL 0.25 (0.010) 16 PL 0.25 (0.010) M T A T B M S INCHES MIN MAX 0.750 0.785 0.240 0.295 ––– 0.200 0.015 0.020 0.050 BSC 0.055 0.065 0.100 BSC 0.008 0.015 0.125 0.170 0.300 BSC 0_ 15 _ 0.020 0.040 MILLIMETERS MIN MAX 19.05 19.93 6.10 7.49 ––– 5.08 0.39 0.50 1.27 BSC 1.40 1.65 2.54 BSC 0.21 0.38 3.18 4.31 7.62 BSC 0_ 15 _ 0.51 1.01 S P SUFFIX PLASTIC DIP PACKAGE CASE 648–08 ISSUE R NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 5. ROUNDED CORNERS OPTIONAL. –A– 16 9 1 8 B F C L S –T– K H G D J 16 PL 0.25 (0.010) MC14572UB 4 SEATING PLANE M T A M M DIM A B C D F G H J K L M S INCHES MIN MAX 0.740 0.770 0.250 0.270 0.145 0.175 0.015 0.021 0.040 0.70 0.100 BSC 0.050 BSC 0.008 0.015 0.110 0.130 0.295 0.305 0_ 10 _ 0.020 0.040 MILLIMETERS MIN MAX 18.80 19.55 6.35 6.85 3.69 4.44 0.39 0.53 1.02 1.77 2.54 BSC 1.27 BSC 0.21 0.38 2.80 3.30 7.50 7.74 0_ 10 _ 0.51 1.01 MOTOROLA CMOS LOGIC DATA OUTLINE DIMENSIONS D SUFFIX PLASTIC SOIC PACKAGE CASE 751B–05 ISSUE J –A– 16 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 9 –B– 1 P 8 PL 0.25 (0.010) 8 M B S G R K F X 45 _ C –T– SEATING PLANE M D 16 PL 0.25 (0.010) M T B S A S J DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 Motorola reserves the right to make changes without further notice to any products herein. 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How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315 MFAX: [email protected] – TOUCHTONE 602–244–6609 INTERNET: http://Design–NET.com ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 MOTOROLA CMOS LOGIC DATA ◊ *MC14572UB/D* MC14572UB MC14572UB/D 5