Order this document by MHW927A/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed specifically for the United States digital 3.0 W, mobile radio. The MHW927A / B are capable of wide power range control, operate from a 12.5 V supply and require 1.0 mW of RF input power. *Motorola Preferred Device • MHW927A Operates from a 9.5 Volt Bias Supply (VB) MHW927B Operates from a 8.0 Volt Bias Supply (VB) 6.0 W 824 to 849 MHz RF LINEAR POWER AMPLIFIERS • Specified 12.5 Volt Characteristics for MHW927A/B: RF Input Power — 1.0 mW (0 dBm) Max RF Output Power — 6.0 W Power Gain — 40 dB Typ Harmonics — – 30 dBc Max @ 2 f0 • Linearity (IMD) — – 29 dBc Max for 3rd Order; – 34 dBc Max for 5th Order • New Biasing and Control Techniques Providing Dynamic Range and Control Circuit Bandwidth Ideal for USDC • 50 Ω Input / Output Impedances • Guaranteed Stability and Ruggedness CASE 301AA–01, STYLE 1 MAXIMUM RATINGS (Recommended Values for Safe Operation — Not Guaranteed Performance) Rating DC Supply Voltage DC Bias Voltage RF Input Power MHW927A, B RF Output Power Symbol Value Unit VS2, VS3 16.5 Vdc VB 10 Vdc Pin 3.0 mW Pout 13 W Operating Case Temperature Range TC – 30 to +100 °C Storage Temperature Range Tstg – 30 to +100 °C ELECTRICAL CHARACTERISTICS (VS2 = VS3 = 12.5 Vdc; VB = 9.5 Vdc (MHW927A); VB = 8.0 Vdc (MHW927B); Pin ≤ 1.0 mW (MHW927A / B); TC = +25°C, 50 ohm system, unless otherwise noted) Symbol Min Typ Max Unit Frequency Range BW 824 — 849 MHz Input Power (Pout = 6.0 W) (1) Pin — — 1.0 mW Efficiency (Pout = 6.0 W) (1) η1 28 30 — % Characteristic η2 28 30 — % VSWRin — — 2.5:1 — — — — — — – 30 – 45 dBc Noise Power (In 30 kHz Bandwidth, 45 MHz Above f0; TC = +25°C to TC = +100°C; Pout = 6.0 W) (1) — — — – 82 dBm Linearity (Pout (Avg.) = 6.0 W; f1 & f2 are 10 kHz apart) (1) 3rd Order IMD 5th Order IMD — — — – 31 – 36 – 29 – 34 dBc Load Mismatch Stress (VS2 = VS3 = 16 Vdc; Pout = 12.5 W; Pulsed at 50% Duty Cycle; Load VSWR = 20:1, All Phase Angles At Frequency of Test) (1) ψ No Degradation In Output Power Between Before and After Test Stability (VS2 = VS3 = 10 to 16 Vdc; Pout = 0.012 to 12 W; Load VSWR = 4:1, All Phase Angles At Frequency of Test) (1) — All Spurious Outputs More Than 70 dB Below Desired Signal Efficiency, Two Tone (Pout (Avg.) = 6.0 W; f1 & f2 10 kHz apart) (1) Input VSWR (Pout = 6.0 W) (1) Harmonics (Pout = 6.0 W) (1) 2 f0 3 f0 NOTE: 1. Adjust Pin for Specified Pout. Preferred devices are Motorola recommended choices for future use and best overall value. REV 6 RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MHW927A MHW927B 1 MHW927 INTERNAL DIAGRAM 1 2 3 INPUT* REFLECTED POWER POWER METER METER 4 OUTPUT POWER SPECTRUM METER ANALYZER 5 TEST FIXTURE Z1 C1 C4 C2 C5 C6 + + + C7 C8 C9 C3 Z2 20 dB ATTENUATOR RF IN 20 dB DUAL DIRECTIONAL COUPLER 10 dB MINIMUM ATTENUATION RF OUT VBIAS (TYPICAL)(1) VS2 12.5 V @ 160 mA (TYPICAL) VS3 12.5 V @ 1.25 mA (TYPICAL) 20 dB DUAL DIRECTIONAL COUPLER POWER TERMINATION 50 Ω TERMINATION 6 dB PAD 90 DEGREE HYBRID JUNCTION RF SIGNAL GENERATOR CIRCULATORS RF SIGNAL GENERATOR 6 dB PAD 50 Ω TERMINATION C1, 2, 3 — 0.018 µF C4, 5, 6 — 0.1 µF C7, 8, 9 — 1.0 µF (tant.)(tant.) Z1, Z2 — 50 Ω MICROSTRIP (1) V BIAS = 9.5 V @ 140 mA (MHW927A) or 8.0 V @ 140 mA (MHW927B) *Module input power is forward power as sampled by the directional *coupler and read on the input power meter. Figure 1. MHW927A / B Test Circuit Diagram MHW927A MHW927B 2 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 33 η 0.55 31 Po = 6.0 W VB = 9.5 V VS2 = VS3 = 12.5 V 0.50 30 Pin VSWR 0.45 1.3 1.2 0.40 815 825 835 845 849 MHz 1 0.1 0.01 0.02 0.05 0.2 0.1 0.5 2 1 5 f, FREQUENCY (MHz) Pin, INPUT POWER (mW) Figure 2. Input Power, Efficiency and VSWR versus Frequency Figure 3. Output Power versus Input Power 10 16 11 Po = 6.0 W @ TC = 25°C VB = 9.5 V VS2 = VS3 = 12.5 V 9 8 7 6 f = 849 MHz 5 14 Po, OUTPUT POWER (W) 10 Po, OUTPUT POWER (W) f = 824 MHz VB = 9.5 V VS2 = VS3 = 12.5 V 1.1 855 10 VSWR in Pin, INPUT POWER (mW) 32 100 Po, OUTPUT POWER (W) 0.60 η, EFFICIENCY (%) (MHW927A) 4 12 f = 824 MHz 10 8 849 MHz 6 Pin = 1.0 mW VB = 9.5 V VS2 = VS3 = 12.5 V 4 2 824 MHz 3 – 40 0 40 80 0 120 –4 0 TC, CASE TEMPERATURE (°C) –2 0 –3 0 –4 0 –5 0 –6 0 – 70 IM3 IM5 IM7 f1 = 824.00 MHz f2 = 824.01 MHz VB = 9.5 V VS2 = VS3 = 12.5 V – 80 – 90 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 Po, OUTPUT POWER (W) Figure 6. Intermodulation versus Output Power MOTOROLA RF DEVICE DATA 40 80 12 0 Figure 5. Output Power versus Case Temperature at Maximum Input Power IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) Figure 4. Output Power versus Case Temperature 0 TC, CASE TEMPERATURE (°C) 10 –2 0 –3 0 –4 0 –5 0 –6 0 – 70 IM3 IM5 IM7 f1 = 849.00 MHz f2 = 849.01 MHz VB = 9.5 V VS2 = VS3 = 12.5 V – 80 – 90 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 Po, OUTPUT POWER (W) Figure 7. Intermodulation versus Output Power MHW927A MHW927B 3 TYPICAL CHARACTERISTICS 33 η 32 0.8 31 0.7 30 Pin 0.6 1.6 0.5 VSWRin 0.4 0.3 815 825 1.4 835 845 100.0 10.0 849 MHz 1.0 0.1 0.01 1.2 855 f = 824 MHz VB = 8.0 V VS2 = VS3 = 12.5 V VSWR in Pin, INPUT POWER (mW) Po = 6.0 W 1.0 VB = 8.0 V VS2 = VS3 = 12.5 V 0.9 Po, OUTPUT POWER (W) 34 1.1 η , EFFICIENCY (%) (MHW927B) 0.02 0.05 11 13 10 12 9 Pout = 6.0 W @ TC = 25°C VB = 8.0 V VS2 = VS3 = 12.5 V 7 0.2 0.5 1.0 2 5 10.0 Figure 9. Output Power versus Input Power Po, OUTPUT POWER (W) Po, OUTPUT POWER (W) Figure 8. Input Power, Efficiency and VSWR versus Frequency 8 0.1 Pin, INPUT POWER (mW) f, FREQUENCY (MHz) 6 f = 824 MHz 5 11 Pin = 1.0 mW VB = 8.0 V VS2 = VS3 = 12.5 V 10 9 8 f = 824 MHz 7 849 MHz 6 4 849 MHz 3 – 40 0 40 80 5 120 – 40 TC, CASE TEMPERATURE (°C) – 20 – 30 IM3 – 50 IM5 – 60 IM7 f 1= 824.00 MHz f2 = 824.01 MHz VB = 8.0 V VS2 = VS3 = 12.5 V – 70 – 80 – 90 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 Po, OUTPUT POWER (W) Figure 12. Intermodulation versus Output Power MHW927A MHW927B 4 40 80 120 Figure 11. Output Power versus Case Temperature at Maximum Input Power IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) Figure 10. Output Power versus Case Temperature – 40 0 TC, CASE TEMPERATURE (°C) 1 0 – 20 – 30 IM3 – 40 – 50 IM5 – 60 IM7 – 70 f 1= 849.00 MHz f2 = 849.01 MHz VB = 8.0 V VS2 = VS3 = 12.5 V – 80 – 90 0.01 0.02 0.05 0.1 0.2 0.5 0.1 2 5 Po, OUTPUT POWER (W) 1 0 Figure 13. Intermodulation versus Output Power MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION F TO CENTER OF LEADS. –A– G 0.13 (0.005) M T A M B –S– R J 1 2 34 5 K X W D 5 PL 0.13 (0.005) M T Z Q 2 PL 0.13 (0.005) V N H –Z– C –T– SEATING PLANE P E 5 PL 0.13 (0.005) M T F M T S M DIM A B C D E F G H J K N P Q R S V W X INCHES MIN MAX 2.190 2.210 1.395 1.415 0.355 0.380 0.018 0.022 0.120 0.135 0.164 BSC 1.900 BSC 1.700 BSC 0.345 0.385 0.225 ––– 1.600 BSC 0.008 0.012 0.150 0.160 0.690 0.770 0.595 0.615 0.700 BSC 0.600 BSC 0.500 BSC STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 55.63 56.13 35.44 35.94 9.02 9.65 0.46 0.55 3.05 3.42 4.16 BSC 48.26 BSC 43.18 BSC 8.77 9.77 5.72 ––– 40.64 BSC 0.21 0.30 3.81 4.06 17.53 19.55 15.12 15.62 17.78 BSC 15.24 BSC 12.70 BSC RF INPUT VBIAS (8.0 V) VCC2 (12.5 V) VCC3 (12.5 V) RF OUTPUT CASE 301AA–01 ISSUE O MOTOROLA RF DEVICE DATA MHW927A MHW927B 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MHW927A MHW927B 6 ◊ *MHW927A/D* MHW927A/D MOTOROLA RF DEVICE DATA