MJD200 (NPN) MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS, 12.5 WATTS • High DC Current Gain − hFE = 70 (Min) @ IC = 500 mAdc • • • • • • • = 45 (Min) @ IC = 2 Adc = 10 (Min) @ IC = 5 Adc Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Low Collector−Emitter Saturation Voltage − VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc High Current−Gain − Bandwidth Product − fT = 65 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakage − ICBO = 100 nAdc @ Rated VCB Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb−Free Packages are Available 1 2 3 DPAK CASE 369C STYLE 1 MARKING DIAGRAM YWW J2x0G Y WW MAXIMUM RATINGS Rating 4 = = x = Year Work Week = 1 or 0 Pb−Free Package Symbol Max Unit VCB 40 Vdc VCEO 25 Vdc VEB 8.0 Vdc ORDERING INFORMATION IC 5.0 10 Adc See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 12.5 0.1 W W/°C Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD 1.4 0.011 W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 °C Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous − Peak G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 8 1 Publication Order Number: MJD200/D MJD200 (NPN) MJD210 (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 10 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 89.3 °C/W 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 25 − Vdc − − 100 100 nAdc mAdc − 100 nAdc 70 45 10 − 180 − − − − 0.3 0.75 1.8 OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 3), (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0, TJ = 125°C) VCBO Emitter Cutoff Current (VBE = 8 Vdc, IC = 0) VEBO ON CHARACTERISTICS DC Current Gain (Note 3), (IC = 500 mAdc, VCE = 1 Vdc) (IC = 2 Adc, VCE = 1 Vdc) (IC = 5 Adc, VCE = 2 Vdc) hFE − Collector−Emitter Saturation Voltage (Note 3) (IC = 500 mAdc, IB = 50 mAdc) (IC = 2 Adc, IB = 200 mAdc) (IC = 5 Adc, IB = 1 Adc) VCE(sat) Vdc Base−Emitter Saturation Voltage (Note 3), (IC = 5 Adc, IB = 1 Adc) VBE(sat) − 2.5 Vdc Base−Emitter On Voltage (Note 3), (IC = 2 Adc, VCE = 1 Vdc) VBE(on) − 1.6 Vdc fT 65 − MHz Cob − − 80 120 pF DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (Note 4) (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJD200 MJD210 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%. 4. fT = ⎪hfe⎪• ftest. ORDERING INFORMATION Device MJD200 Package Type DPAK MJD200G DPAK (Pb−Free) MJD200RL DPAK MJD200RLG MJD200T4 MJD200T4G MJD210 DPAK (Pb−Free) DPAK (Pb−Free) MJD210RL DPAK MJD210T4G 1800 / Tape & Reel 2500 / Tape & Reel DPAK DPAK (Pb−Free) MJD210T4 75 Units / Rail DPAK MJD210G MJD210RLG Shipping † DPAK (Pb−Free) 75 Units / Rail 1800 / Tape & Reel DPAK DPAK (Pb−Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 TA 2.5 TC 25 2 20 VCC +30 V 25 ms RC +11 V 1.5 0 15 SCOPE RB −9 V 1 10 0.5 5 0 0 TA (SURFACE MOUNT) tr, tf ≤ 10 ns DUTY CYCLE = 1% TC D1 51 −4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS 25 50 75 100 125 D1 MUST BE FAST RECOVERY TYPE, e.g.: FOR PNP TEST CIRCUIT, 1N5825 USED ABOVE IB ≈ 100 mA REVERSE ALL POLARITIES MSD6100 USED BELOW IB ≈ 100 mA 150 T, TEMPERATURE (°C) Figure 1. Power Derating Figure 2. Switching Time Test Circuit 1K 10K td 500 300 200 5K 3K 2K tr 10 t, TIME (ns) 50 30 20 5 3 2 ts 1K 100 t, TIME (ns) PD, POWER DISSIPATION (WATTS) MJD200 (NPN) MJD210 (PNP) VCC = 30 V IC/IB = 10 TJ = 25°C 500 300 200 100 50 30 20 MJD200 MJD210 1 1 2 3 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (A) VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 5 10 MJD200 MJD210 tf 10 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 IC, COLLECTOR CURRENT (A) Figure 3. Turn−On Time Figure 4. Turn−Off Time http://onsemi.com 3 3 5 10 MJD200 (NPN) MJD210 (PNP) NPN MJD200 400 PNP MJD210 400 TJ = 150°C hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 25°C 200 −55 °C 100 80 60 40 VCE = 1 V VCE = 2 V 20 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 IC, COLLECTOR CURRENT (A) 3 TJ = 150°C 200 25°C 100 80 −55 °C 60 40 VCE = 1 V VCE = 2 V 20 0.05 0.07 0.1 5 0.2 0.3 0.5 0.7 1 2 IC, COLLECTOR CURRENT (A) 3 5 Figure 5. DC Current Gain 2 2 TJ = 25°C TJ = 25°C 1.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.6 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1 V 0.4 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1 V 0.4 VCE(sat) @ IC/IB = 10 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 IC, COLLECTOR CURRENT (A) 2 3 VCE(sat) @ IC/IB = 10 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 IC, COLLECTOR CURRENT (A) 5 2 3 5 3 5 Figure 6. “On” Voltage +2 +2.5 θV, TEMPERATURE COEFFICIENTS (mV/C) ° θV, TEMPERATURE COEFFICIENTS (mV/C) ° +2.5 *APPLIES FOR IC/IB ≤ hFE/3 +1.5 +1 +0.5 25°C to 150°C qVC for VCE(sat) 0 −0.5 −55 °C to 25°C −1 25°C to 150°C −1.5 qVB for VBE −55 °C to 25°C −2 −2.5 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 3 +2 *APPLIES FOR IC/IB ≤ hFE/3 +1.5 25°C to 150°C +1 +0.5 *qVC for VCE(sat) 0 −55 °C to 25°C −0.5 25°C to 150°C −1 −1.5 qVB for VBE −2 −2.5 0.05 0.07 0.1 5 −55 °C to 25°C IC, COLLECTOR CURRENT (A) 0.2 0.3 0.5 0.7 1 IC, COLLECTOR CURRENT (A) Figure 7. Temperature Coefficients http://onsemi.com 4 2 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJD200 (NPN) MJD210 (PNP) 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 RqJC(t) = r(t) qJC RqJC = 10°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) qJC(t) 0.05 0.1 0.07 0.05 0.02 0.01 0.03 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0 (SINGLE PULSE) 0.02 0.01 0.02 0.05 0.1 0.2 0.5 1 2 t, TIME (ms) 5 10 20 50 100 200 Figure 8. Thermal Response 5 3 2 1 0.1 0.01 0.3 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 9 is based on T J(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150°C. T J(pk) may be calculated from the data in Figure 8. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 5ms TJ = 150°C 100ms 1ms 500ms dc BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 1 2 3 5 7 10 20 VCE, COLLECTOR−EMITTER VOLTAGE (V) 30 Figure 9. Active Region Safe Operating Area 200 TJ = 25°C C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (AMP) 10 Cib 100 70 50 Cob MJD200 (NPN) MJD210 (PNP) 30 20 0.4 0.6 1 2 4 6 10 VR, REVERSE VOLTAGE (V) Figure 10. Capacitance http://onsemi.com 5 20 40 MJD200 (NPN) MJD210 (PNP) PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− T STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJD200/D