MJD44H11 (NPN) MJD45H11 (PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS, 20 WATTS Features • Lead Formed for Surface Mount Application in Plastic Sleeves • • • • • • • • (No Suffix) Straight Lead Version in Plastic Sleeves (“−1” Suffix) Electrically Similar to Popular D44H/D45H Series Low Collector Emitter Saturation Voltage − VCE(sat) = 1.0 Volt Max @ 8.0 Amperes Fast Switching Speeds Complementary Pairs Simplifies Designs Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb−Free Packages are Available MARKING DIAGRAMS 4 1 2 3 Rating Emitter−Base Voltage Collector Current − Continuous − Peak DPAK CASE 369C STYLE 1 4 MAXIMUM RATINGS Collector−Emitter Voltage YWW J4 xH11G Symbol Max Unit VCEO 80 Vdc VEB 5 Vdc IC 8 16 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD Operating and Storage Junction Temperature Range TJ, Tstg YWW J4 xH11G 1 2 3 DPAK−3 CASE 369D STYLE 1 W 20 0.16 W/°C W 1.75 0.014 W/°C −55 to +150 °C Y WW J4xH11 G = Year = Work Week = Device Code x = 4 or 5 = Pb−Free Package THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Case Characteristic RqJC 6.25 °C/W Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 71.4 °C/W TL 260 °C Lead Temperature for Soldering Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 7 1 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MJD44H11/D MJD44H11 (NPN) MJD45H11 (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 80 − − Vdc Collector Cutoff Current (VCE = Rated VCEO, VBE = 0) ICES − − 10 mA Emitter Cutoff Current (VEB = 5 Vdc) IEBO − − 50 mA Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc) VCE(sat) − − 1 Vdc Base−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) VBE(sat) − − 1.5 Vdc hFE 60 − − − 40 − − − − 130 230 − − − − 50 40 − − − − 300 135 − − − − 500 500 − − − − 140 100 − − OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 30 mA, IB = 0) ON CHARACTERISTICS DC Current Gain (VCE = 1 Vdc, IC = 2 Adc) DC Current Gain (VCE = 1 Vdc, IC = 4 Adc) DYNAMIC CHARACTERISTICS Collector Capacitance (VCB = 10 Vdc, ftest = 1 MHz) Ccb MJD44H11 MJD45H11 Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) pF fT MJD44H11 MJD45H11 MHz SWITCHING TIMES Delay and Rise Times (IC = 5 Adc, IB1 = 0.5 Adc) td + tr MJD44H11 MJD45H11 Storage Time (IC = 5 Adc, IB1 = IB2 = 0.5 Adc) ns ts MJD44H11 MJD45H11 Fall Time (IC = 5 Adc, IB1 = IB2 = 0.5 Adc ns tf MJD44H11 MJD45H11 http://onsemi.com 2 ns MJD44H11 (NPN) MJD45H11 (PNP) ORDERING INFORMATION Device MJD44H11 MJD44H11G MJD44H11−001 MJD44H11−001G MJD44H11RL MJD44H11RLG MJD44H11T4 MJD44H11T4G MJD44H11T5 MJD44H11T5G MJD45H11 MJD45H11G MJD45H11−001 MJD45H11−001G MJD45H11RL MJD45H11RLG Package Type Package Shipping † DPAK 369C DPAK (Pb−Free) 75 Units / Rail DPAK−3 369D DPAK−3 (Pb−Free) DPAK 1800 Tape & Reel DPAK (Pb−Free) DPAK DPAK (Pb−Free) 369C DPAK 2500 Tape & Reel DPAK (Pb−Free) DPAK DPAK (Pb−Free) 75 Units / Rail DPAK−3 369D DPAK−3 (Pb−Free) DPAK 1800 Tape & Reel DPAK (Pb−Free) 369C MJD45H11T4 MJD45H11T4G DPAK 2500 Tape & Reel DPAK (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 3 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJD44H11 (NPN) MJD45H11 (PNP) 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 RqJC(t) = r(t) RqJC RqJC = 6.25°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) qJC(t) 0.1 0.1 0.07 0.05 0.05 0.02 0.01 0.03 0.02 P(pk) t1 SINGLE PULSE 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 t, TIME (ms) 10 20 30 t2 DUTY CYCLE, D = t1/t2 50 100 200 300 500 1k Figure 1. Thermal Response IC, COLLECTOR CURRENT (AMP) 20 10 500ms 5 3 2 dc There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150_C. T J(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100ms 1ms 5ms 1 0.5 0.3 THERMAL LIMIT @ TC = 25°C WIRE BOND LIMIT 0.1 0.05 1 3 5 7 10 20 30 50 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 70 100 Figure 2. Maximum Forward Bias Safe Operating Area TA TC 2.5 25 PD, POWER DISSIPATION (WATTS) 0.02 2 20 TC 1.5 15 TA SURFACE MOUNT 1 10 0.5 5 0 0 25 50 75 100 T, TEMPERATURE (°C) Figure 3. Power Derating http://onsemi.com 4 125 150 MJD44H11 (NPN) MJD45H11 (PNP) 1000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 1000 VCE = 4 V 100 VCE = 1 V TJ = 25°C 10 0.1 1 1 10 IC, COLLECTOR CURRENT (AMPS) Figure 4. MJD44H11 DC Current Gain Figure 5. MJD45H11 DC Current Gain 1000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN TJ = 25°C IC, COLLECTOR CURRENT (AMPS) TJ = 125°C 25°C 100 −40 °C VCE = 1 V 0.1 1 VCE = 1 V 0.1 1 10 Figure 6. MJD44H11 Current Gain versus Temperature Figure 7. MJD45H11 Current Gain versus Temperature SATURATION VOLTAGE (VOLTS) 1.2 VBE(sat) 0.6 0 0.1 100 IC, COLLECTOR CURRENT (AMPS) 0.8 0.2 25°C −40 °C IC, COLLECTOR CURRENT (AMPS) 1 0.4 TJ = 125°C 10 10 1.2 SATURATION VOLTAGE (VOLTS) 1V 10 0.1 10 1000 10 VCE = 4 V 100 IC/IB = 10 TJ = 25°C VCE(sat) 1 IC, COLLECTOR CURRENT (AMPS) 1 0.8 0.6 0.4 IC/IB = 10 TJ = 25°C VCE(sat) 0.2 0 0.1 10 VBE(sat) Figure 8. MJD44H11 On−Voltages 1 IC, COLLECTOR CURRENT (AMPS) Figure 9. MJD45H11 On−Voltages http://onsemi.com 5 10 MJD44H11 (NPN) MJD45H11 (PNP) PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M T INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− MJD44H11 (NPN) MJD45H11 (PNP) PACKAGE DIMENSIONS DPAK−3 CASE 369D−01 ISSUE B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C B E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F H D G 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− STYLE 1: PIN 1. 2. 3. 4. T MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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