MJB44H11 (NPN), MJB45H11 (PNP) Preferred Devices Complementary Power Transistors D2PAK for Surface Mount http://onsemi.com Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. Features • Low Collector−Emitter Saturation Voltage − • • • • • SILICON POWER TRANSISTORS 10 AMPERES, 80 VOLTS, 50 WATTS MARKING DIAGRAM VCE(sat) = 1.0 V (Max) @ 8.0 A Fast Switching Speeds Complementary Pairs Simplifies Designs Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V Pb−Free Packages are Available D2PAK CASE 418B STYLE 1 x A Y WW G MAXIMUM RATINGS Rating Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous − Peak Symbol Value Unit VCEO 80 Vdc VEB 5 Vdc IC 10 20 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD Total Power Dissipation @ TA = 25°C Derate above 25°C PD Operating and Storage Junction Temperature Range W W/°C 2.0 0.016 TJ, Tstg W W/°C °C −55 to 150 Package Shipping † D2PAK 50 Units/Rail MJB44H11G D2PAK (Pb−Free) 50 Units/Rail MJB44H11T4 D2PAK 800/Tape & Reel MJB44H11T4G D2PAK 800/Tape & Reel MJB44H11 (Pb−Free) THERMAL CHARACTERISTICS Characteristic = 4 or 5 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device 50 1.67 B4xH11G AYWW D2PAK 50 Units/Rail MJB45H11G D2PAK (Pb−Free) 50 Units/Rail MJB45H11T4 D2PAK 800/Tape & Reel D2PAK (Pb−Free) 800/Tape & Reel MJB45H11 Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 2.5 °C/W Thermal Resistance, Junction−to−Ambient RqJA 75 °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MJB45H11T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 December, 2005 − Rev. 2 1 Publication Order Number: MJB44H11/D MJB44H11 (NPN), MJB45H11 (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 80 − − Vdc Collector Cutoff Current (VCE = Rated VCEO, VBE = 0) ICES − − 10 mA Emitter Cutoff Current (VEB = 5 Vdc) IEBO − − 50 mA Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc) VCE(sat) − − 1.0 Vdc Base−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) VBE(sat) − − 1.5 Vdc hFE 60 − − − 40 − − − − 130 230 − − − − 50 40 − − − − 300 135 − − − − 500 500 − − − − 140 100 − − OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 30 mA, IB = 0) ON CHARACTERISTICS DC Current Gain (VCE = 1 Vdc, IC = 2 Adc) DC Current Gain (VCE = 1 Vdc, IC = 4 Adc) DYNAMIC CHARACTERISTICS Collector Capacitance (VCB = 10 Vdc, ftest = 1 MHz) Ccb pF MJB44H11 MJB45H11 Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) fT MHz MJB44H11 MJB45H11 SWITCHING TIMES Delay and Rise Times(IC = 5 Adc, IB1 = 0.5 Adc) td + tr MJB44H11 MJB45H11 Storage Time(IC = 5 Adc, IB1 = IB2 = 0.5 Adc) ts ns MJB44H11 MJB45H11 Fall Time(IC = 5 Adc, IB1 = IB2 = 0.5 Adc) tf ns r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJB44H11 MJB45H11 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.01 0.01 0.02 0.01 SINGLE PULSE 0.02 0.05 0.1 P(pk) ZqJC(t) = r(t) RqJC RqJC = 1.56°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) ZqJC(t) 0.05 0.03 0.02 ns 0.2 0.5 1.0 2.0 t, TIME (ms) 5.0 10 Figure 1. Thermal Response http://onsemi.com 2 20 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 500 1.0 k MJB44H11 (NPN), MJB45H11 (PNP) 50 30 20 1.0 ms 5.0 3.0 2.0 1.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on T J(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150°C. T J(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 ms 10 10 ms TC ≤ 70° C DUTY CYCLE ≤ 50% dc 1.0 ms 0.5 0.3 0.2 0.1 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 2. Maximum Rated Forward Bias Safe Operating Area PD, POWER DISSIPATION (WATTS) IC, COLLECTOR CURRENT (AMPS) 100 TA TC 3.0 60 2.0 40 TC 1.0 20 0 0 TA 0 20 40 60 80 100 120 T, TEMPERATURE (°C) Figure 3. Power Derating http://onsemi.com 3 140 160 MJB44H11 (NPN), MJB45H11 (PNP) 1000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 1000 VCE = 4 V 100 VCE = 1 V TJ = 25°C 10 0.1 1 1 10 IC, COLLECTOR CURRENT (AMPS) Figure 4. MJB44H11 DC Current Gain Figure 5. MJB45H11 DC Current Gain 1000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN TJ = 25°C IC, COLLECTOR CURRENT (AMPS) TJ = 125°C 25°C 100 −40 °C VCE = 1 V 0.1 1 VCE = 1 V 0.1 1 10 Figure 6. MJB44H11 Current Gain versus Temperature Figure 7. MJB45H11 Current Gain versus Temperature SATURATION VOLTAGE (VOLTS) 1.2 VBE(sat) 0.6 0 0.1 100 IC, COLLECTOR CURRENT (AMPS) 0.8 0.2 25°C −40 °C IC, COLLECTOR CURRENT (AMPS) 1 0.4 TJ = 125°C 10 10 1.2 SATURATION VOLTAGE (VOLTS) 1V 10 0.1 10 1000 10 VCE = 4 V 100 IC/IB = 10 TJ = 25°C VCE(sat) 1 IC, COLLECTOR CURRENT (AMPS) 1 0.8 0.6 0.4 IC/IB = 10 TJ = 25°C VCE(sat) 0.2 0 0.1 10 VBE(sat) Figure 8. MJB44H11 On−Voltages 1 IC, COLLECTOR CURRENT (AMPS) Figure 9. MJB45H11 On−Voltages http://onsemi.com 4 10 MJB44H11 (NPN), MJB45H11 (PNP) PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E V W −B− 4 DIM A B C D E F G H J K L M N P R S V A 1 2 S 3 −T− SEATING PLANE K W J G H D 3 PL 0.13 (0.005) M T B M STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR VARIABLE CONFIGURATION ZONE N R P U L M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 L M L M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 8.38 0.33 1.016 0.04 10.66 0.42 5.08 0.20 3.05 0.12 17.02 0.67 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 MJB44H11 (NPN), MJB45H11 (PNP) ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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