MJD47/50 NPN Epitaxial Silicon Transistor Features • • • • High Voltage and High Reliability D-PAK for Surface Mount Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, “- I” Suffix) Electrically Similar to Popular TIP47 and TIP50 D-PAK 1 1.Base Absolute Maximum Ratings VCEO 2.Collector I-PAK 3.Emitter Ta = 25°C unless otherwise noted Symbol VCBO 1 Value Units Collector-Emitter Voltage : MJD47 : MJD50 Parameter 350 500 V V Collector-Emitter Voltage : MJD47 : MJD50 250 400 V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 1 A ICP Collector Current (Pulse) 2 A IB Base Current 0.6 A PC Collector Dissipation (TC = 25°C) 15 W Collector Dissipation (Ta = 25°C) 1.56 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 to 150 °C Ordering Information Part Number Marking Package Packing Method MJD47TF MJD47 D-PAK Tape & Reel MJD50TF MJD50 D-PAK Tape & Reel © 2012 Fairchild Semiconductor Corporation MJD47/50 Rev. B0 Remarks www.fairchildsemi.com 1 MJD47/50 — NPN Epitaxial Silicon Transistor February 2012 Symbol VCEO(sus) ICEO ICES Ta = 25°C unless otherwise noted Parameter Test Condition * Collector-Emitter Sustaining Voltage : MJD47 IC = 30mA, IB = 0 IC = 30mA, IB = 0 : MJD50 Min. Max. 250 400 Units V V Collector Cut-off Current : MJD47 : MJD50 VCE = 150V, IB = 0 VCE = 300V, IB = 0 0.2 0.2 mA mA Collector Cut-off Current : MJD47 : MJD50 VCE = 350, VEB = 0 VCE = 500, VEB = 0 0.1 0.1 mA mA 1 mA IEBO Emitter Cut-off Current VBE = 5V, IC = 0 hFE * DC Current Gain VCE = 10V, IC = 0.3A VCE = 10V, IC = 1A VCE(sat) * Collector-Emitter Saturation Voltage IC = 1A, IB = 0.2A VBE(sat) * Base-Emitter Saturation Voltage VCE = 10A, IC = 1A fT Current Gain Bandwidth Product VCE =10V, IC = 0.2A 30 10 150 1 1.5 10 V V MHz * Pulse Test: PW≤300μs, Duty Cycle≤2% © 2012 Fairchild Semiconductor Corporation MJD47/50 Rev. B0 www.fairchildsemi.com 2 MJD47/50 — NPN Epitaxial Silicon Transistor Electrical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 hFE, DC CURRENT GAIN VCE = 2V 100 10 1 0.01 0.1 1 10 I C = 5 IB VBE(sat) 1 0.1 VCE(sat) 0.01 0.01 10 0.1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 10 VCC = 200V IC = 5IB VCC = 200V IC = 5IB tSTG, tF [μs], TURN OFF TIME tR, tD [μs], TURN ON TIME 1 1 tR 0.1 tSTG 1 0.1 tF tD 0.01 0.01 0.1 1 0.01 0.01 10 0.1 IC[A], COLLECTOR CURRENT Figure 4. Turn Off Time 20 ICP(max) 1 PC[W], POWER DISSIPATION 10 10 50 0μ s 0μ s IC(max) DC 1m s 0.01 MJD50 0.1 MJD47 IC[A], COLLECTOR CURRENT 10 IC[A], COLLECTOR CURRENT Figure 3. Turn On Time 15 10 5 0 1E-3 1 10 100 0 1000 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area Figure 6. Power Derating © 2012 Fairchild Semiconductor Corporation MJD47/50 Rev. B0 1 www.fairchildsemi.com 3 MJD47/50 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics MJD47/50 — NPN Epitaxial Silicon Transistor Physical Dimensions D-PAK Dimensions in Millimeters © 2012 Fairchild Semiconductor Corporation MJD47/50 Rev. B0 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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