2N6520 PNP Epitaxial Silicon Transistor Features • High Voltage Transistor • Collector-Emitter Voltage: VCBO= -350V • Collector Dissipation: PC (max)=625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Unit VCBO Collector-Base Voltage -350 V VCEO Collector-Emitter Voltage -350 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA IB Base Current -250 mA PC Collector Power Dissipation 0.625 W 5 mW/°C Derate above 25°C TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to +150 °C © 2009 Fairchild Semiconductor Corporation 2N6520 Rev. B1 www.fairchildsemi.com 1 2N6520 — PNP Epitaxial Silicon Transistor June 2009 Symbol Parameter Test Conditions IC= -100μA, IE=0 Min. Max. Units BVCBO Collector-Base Breakdown Voltage -350 V BVCEO * Collector-Emitter Breakdown Voltage IC= -1mA, IB=0 -350 V BVEBO Emitter-Base Breakdown Voltage IE= -10μA, IC=0 -5 V ICBO Collector Cut-off Current VCB= -250V, IE=0 -50 nA IEBO Emitter Cut-off Current VEB= -4V, IC=0 -50 nA hFE * DC Current Gain VCE= -10V, IC= -1mA VCE= -10V, IC= -10mA VCE= -10V, IC= -30mA VCE= -10V, IC= -50mA VCE= -10V, IC= -100mA 20 30 30 20 15 200 200 VCE (sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -1mA IC= -20mA, IB= -2mA IC= -30mA, IB= -3mA IC= -50mA, IB= -5mA -0.30 -0.35 -0.50 -1 V V V V VBE (sat) Base-Emitter Saturation Voltage IC= -10mA, IB= -1mA IC= -20mA, IB= -2mA IC= -30mA, IB= -3mA -0.75 -0.85 -0.90 V V V VBE (on) Base-Emitter On Voltage VCE= -10V, IC= -100mA -2 V 200 MHz fT * Current Gain Bandwidth Product VCE= -20V, IC= -10mA, f=20MHz 40 Cob Output Capacitance VCB= -20V, IE=0, f=1MHz 6 pF CEB Emitter-Base Capacitance VEB= -0.5V, IC=0, f=1MHz 100 pF tON Turn On Time VBE (off)= -2V, VCC= -100V IC= -50mA, IB1= -10mA 200 ns tOFF Turn Off Time VCC= -100V, IC= -50mA IB1=IB2= -10mA 3.5 ns * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% © 2009 Fairchild Semiconductor Corporation 2N6520 Rev. B1 www.fairchildsemi.com 2 2N6520 — PNP Epitaxial Silicon Transistor Electrical Characteristics TA=25°C unless otherwise noted VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE 1000 hFE, DC CURRENT GAIN VCE = -20V 100 10 1 -1 -10 -100 -1000 -10000 VCE(sat) IC = 10 IB -1000 VBE(sat) -100 -10 -10000 -1 -10 IC[mA], COLLECTOR CURRENT -100 -1000 -10000 IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 tSTG VCE(off) = -100V tD @ VBE(off)=-2.0V 1000 VCE(off) = -100V tR tF t[ns] ,TIME t[ns] ,TIME IC/IB= 5 o TJ=25 C 100 IC/IB= 5 IB1 = IB2 o TJ=25 C 100 10 -1 -10 -1 -100 -10 IC[mA], COLLECTOR CURRENT Figure 3. Turn-On Time Figure 4. Turn-Off Time 100 3.0 Cib[pF], Cob[pF], CAPACITANCE 2.0 o o -55 C to 125 C 1.5 1.0 0.5 o o -55 C to 25 C Rθ VB for VBE 0.0 -0.5 -1.0 o o R[mV/ C], THERMAL COEFFICIENTS f=1MHz IC/IB = 10 2.5 RθVC for VCE(sat) -1.5 o -55 C to 125 C Cib 10 Cob -2.0 1 -0.1 -2.5 -1 -10 -100 IC[mA], COLLECTOR CURRENT -1 -10 -100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Temperature Coefficients Figure 6. Capacitance © 2009 Fairchild Semiconductor Corporation 2N6520 Rev. B1 -100 IC[mA], COLLECTOR CURRENT www.fairchildsemi.com 3 2N6520 — PNP Epitaxial Silicon Transistor Typical Performance Characteristics fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 2N6520 — PNP Epitaxial Silicon Transistor Typical Performance Characteristics (Continued) 1000 VCE = -20V 100 10 -1 -10 -100 IC[mA], COLLECTOR CURRENT Figure 7. Current Gain Bandwidth Product © 2009 Fairchild Semiconductor Corporation 2N6520 Rev. B1 www.fairchildsemi.com 4 2N6520 — PNP Epitaxial Silicon Transistor Physical Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 14.47 ±0.40 0.46 ±0.10 +0.10 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] 0.38 –0.05 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 ±0.20 (R2.29) Dimensions in Millimeters © 2009 Fairchild Semiconductor Corporation 2N6520 Rev. B1 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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