KST3904 NPN Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 1A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Range Electrical Characteristics Value Units 60 40 6 200 350 -55 to 150 V V V mA mW °C Ta=25°C unless otherwise noted Symbol Parameter BVCBO BVCEO BVEBO ICEX hFE Collector-Base Breakdown Voltage * Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current * DC Current Gain Test Condition IC=10μA, IE=0 IC=1mA, IB=0 IE=10μA, IC=0 VCE=30V, VEB=3V VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=50mA VCE=1V, IC=100mA VCE(sat) * Collector-Emitter Saturation Voltage IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA VBE(sat) * Base-Emitter Saturation Voltage IC=50mA, IB=5mA Output Capacitance VCB=5V, IE=0, f=1MHz Cob Current Gain-Bandwidth Product VCE=20V, IC=10mA, f=100MHz fT NF Noise Figure IC=100μA, VCE=5V, RS=1KΩ, f=10Hz to 15.7KHz Turn On Time VCC=3V, VBE=0.5V, tON IC=10mA, IB1=1mA Turn Off Time VCC=3V, IC=10mA, tOFF IB1=IB2=1mA * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% © 2011 Fairchild Semiconductor Corporation KST3904 Rev. A2 Min. Max. Units 50 V V V nA 60 40 6 40 70 100 60 30 300 0.65 0.2 0.3 0.85 0.95 4 5 V V V V pF MHz dB 70 ns 250 ns 300 www.fairchildsemi.com 1 KST3904 — NPN Epitaxial Silicon Transistor November 2011 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 240 VCE = 1V hFE, DC CURRENT GAIN 200 160 120 80 40 0 0.1 1 10 100 10 IC = 10 IB VBE(sat) 1 0.1 VCE(sat) 0.01 0.1 Figure 1. DC current Gain 100 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 1000 IE = 0 f = 1MHz Cob [pF], CAPACITANCE 10 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 1 0.1 1 10 100 VCB [V], COLLECTOR-BASE VOLTAGE VCE = 20V 100 10 0.1 1 10 100 IC[mA], COLLECTOR CURRENT Figure 3. Output Capacitance Figure 4. Current Gain Bandwidth Product © 2011 Fairchild Semiconductor Corporation KST3904 Rev. A2 1 IC[mA], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT www.fairchildsemi.com 2 KST3904 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics KST3904 — NPN Epitaxial Silicon Transistor Physical Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters © 2011 Fairchild Semiconductor Corporation KST3904 Rev. A2 www.fairchildsemi.com 3 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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