DIODES MMBTA63_2

MMBTA63 / MMBTA64
PNP SURFACE MOUNT DARLINGTON TRANSISTOR
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Features
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Epitaxial Planar Die Construction
Complementary NPN Types Available
(MMBTA13 /MMBTA14)
Ideal for Low Power Amplification and Switching
High Current Gain
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
A
C
B
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C
E
D
E
G
Mechanical Data
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TOP VIEW
Dim
A
B
C
D
E
G
H
J
K
L
M
H
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe). Terminal Connections: See Diagram
MMBTA63 Marking K2E, K3E See Page 3
MMBTA64 Marking K3E See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
Maximum Ratings
K
J
D
M
L
C
SOT-23
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
0°
8°
α
All Dimensions in mm
E
B
@TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-30
V
Collector-Emitter Voltage
VCEO
-30
V
Emitter-Base Voltage
VEBO
-10
V
Collector Current - Continuous
(Note 1)
IC
-500
mA
Power Dissipation
(Note 1)
PD
300
mW
Thermal Resistance, Junction to Ambient
(Note 1)
RθJA
417
°C/W
TJ, TSTG
-55 to +150
°C
Operating and Storage Temperature Range
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 2)
Symbol
Min
Max
Unit
Test Condition
Collector-Emitter Breakdown Voltage
V(BR)CEO
-30
⎯
V
IC = -100μA VBE = 0V
Collector Cutoff Current
ICBO
⎯
-100
nA
VCB = -30V, IE = 0
Emitter Cutoff Current
IEBO
⎯
-100
nA
VEB = -10V, IC = 0
hFE
5,000
10,000
10,000
20,000
⎯
⎯
IC = -10mA, VCE = -5.0V
IC = -10mA, VCE = -5.0V
IC = -100mA, VCE = -5.0V
IC = -100mA, VCE = -5.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
-1.5
V
IC = -100mA, IB = -100μA
Base-Emitter Saturation Voltage
VBE(SAT)
⎯
-2.0
V
IC = -100mA, VCE = -5.0V
fT
125
⎯
MHz
VCE = -5.0V, IC = -10mA,
f = 100MHz
ON CHARACTERISTICS (Note 2)
DC Current Gain
MMBTA63
MMBTA64
MMBTA63
MMBTA64
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30055 Rev. 8 - 2
1 of 3
www.diodes.com
MMBTA63 / MMBTA64
© Diodes Incorporated
400
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
PD, POWER DISSIPATION (mW)
350
300
250
200
150
100
50
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
0
0
25
50
75
100
125
150
175
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current
200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs. Ambient Temperature
VBE(ON), BASE EMITTER VOLTAGE (V)
10,000,000
hFE, DC CURRENT GAIN
1,000,000
100,000
10,000
1,000
100
1
10
100
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.1
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs. Collector Current
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 4, Base Emitter Voltage vs. Collector Current
fT, GAIN BANDWIDTH PRODUCT (MHz)
1,000
100
10
1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5, Gain Bandwidth Product vs. Collector Current
DS30055 Rev. 8 - 2
2 of 3
www.diodes.com
MMBTA63 / MMBTA64
© Diodes Incorporated
Ordering Information (Note 5)
Device
MMBTA63-7-F
MMBTA64-7-F
Notes:
Packaging
Shipping
SOT-23
3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
YM
Marking Information
KxE
Date Code Key
Year
KxE = Product Type Marking Code, ex: K2E = MMBTA63
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
2011
2012
Code
J
K
L
M
N
P
R
S
T
U
V
W
X
Y
Z
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30055 Rev. 8 - 2
3 of 3
www.diodes.com
MMBTA63 / MMBTA64
© Diodes Incorporated