MMDT5401 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • • A Epitaxial Planar Die Construction Complementary NPN Type Available (MMDT5551) Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 3) "Green" Device (Note 4 and 5) • • • • • • • B2 E2 C1 G H Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: K4M, See Page 3 Ordering & Date Code Information: See Page 3 Weight: 0.006 grams (approximate) Maximum Ratings E1 B C Mechanical Data • • SOT-363 B1 C2 K M J D F L Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J — 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 α 0° 8° All Dimensions in mm @TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitter-Base Voltage Collector Current – Continuous Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage and Temperature Range Notes: VEBO -5.0 V IC -200 mA (Note 1) (Note 1,2) (Note 1) Pd 200 mW RθJA 625 °C/W Tj, TSTG -55 to +150 °C 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Maximum combined dissipation. 3. No purposefully added lead. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30169 Rev. 9 - 2 1 of 4 www.diodes.com MMDT5401 © Diodes Incorporated Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -160 ⎯ V IC = -100μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -150 ⎯ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ⎯ V IE = -10μA, IC = 0 VCB = -120V, IE = 0 VCB = -120V, IE = 0, TA = 100°C Collector Cutoff Current ICBO ⎯ -50 nA μA Emitter Cutoff Current IEBO ⎯ -50 nA VEB = -3.0V, IC = 0 hFE 50 60 50 ⎯ 240 ⎯ ⎯ IC = -1.0mA, VCE = -5.0V IC = -10mA, VCE = -5.0V IC = -50mA, VCE = -5.0V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -0.2 -0.5 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA Base-Emitter Saturation Voltage VBE(SAT) ⎯ -1.0 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA Cobo ⎯ 6.0 pF VCB = -10V, f = 1.0MHz, IE = 0 Small Signal Current Gain hfe 40 200 ⎯ VCE = -10V, IC = -1.0mA, f = 1.0kHz Current Gain-Bandwidth Product fT 100 300 MHz Noise Figure NF ⎯ 8.0 dB ON CHARACTERISTICS (Note 6) DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Notes: VCE = -5.0V, IC = -200μA, RS = 10Ω, f = 1.0kHz 6. Short duration pulse test used to minimize self-heating effect. 10.0 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 200 PD, POWER DISSIPATION (mW) VCE = -10V, IC = -10mA, f = 100MHz 150 100 50 IC IB = 10 1.0 TA = 150°C 0.1 TA = -50°C TA = 25°C 0 0 25 DS30169 Rev. 9 - 2 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 0.01 1 200 2 of 4 www.diodes.com 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current MMDT5401 © Diodes Incorporated 1.0 10,000 VBE(ON), BASE EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN 0.9 1,000 100 10 1 1 VCE = 5V T A = -50°C 0.8 0.7 0.6 T A = 25°C 0.5 0.4 T A = 150°C 0.3 0.2 0.1 0.1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs. Collector Current 1.0 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs. Collector Current 1,000 ft, GAIN BANDWIDTH PRODUCT (MHz) VCE = 10V 100 10 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs Collector Current 1 Ordering Information Notes: 7. (Note 7) Device Packaging Shipping MMDT5401-7-F SOT-363 3000/Tape & Reel For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM Data Code Key Year Code Month Code DS30169 Rev. 9 - 2 1998 J Jan 1 1999 K Feb 2 2000 L 2001 M Mar 3 K4M = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September YM K4M K4M 2002 N Apr 4 2003 P May 5 2004 R 2005 S Jun 6 3 of 4 www.diodes.com 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D MMDT5401 © Diodes Incorporated IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30169 Rev. 9 - 2 4 of 4 www.diodes.com MMDT5401 © Diodes Incorporated