MPSA13, MPSA14 MPSA14 is a Preferred Device Darlington Transistors NPN Silicon Features http://onsemi.com • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating BASE 2 Symbol Value Unit Collector −Emitter Voltage VCES 30 Vdc Collector −Base Voltage VCBO 30 Vdc Emitter −Base Voltage VEBO 10 Vdc Collector Current − Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C MARKING DIAGRAM Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C −55 to +150 °C MPS A1x AYWWG G Operating and Storage Junction Temperature Range TJ, Tstg 1 2 THERMAL CHARACTERISTICS Characteristic EMITTER 1 Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/mW Thermal Resistance, Junction−to−Case RqJC 83.3 °C/mW Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 3 TO−92 (TO−226AA) CASE 29−11 STYLE 1 x = 3 or 4 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 June, 2005 − Rev. 3 1 Publication Order Number: MPSA13/D MPSA13, MPSA14 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)CES 30 − Vdc Collector Cutoff Current (VCB= 30 Vdc, IE = 0) ICBO − 100 nAdc Emitter Cutoff Current (VEB= 10 Vdc, IC = 0) IEBO − 100 nAdc 5,000 10,000 10,000 20,000 − − − − OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 100 mAdc, IB = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) hFE MPSA13 MPSA14 MPSA13 MPSA14 (IC = 100 mAdc, VCE = 5.0 Vdc) − Collector −Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) VCE(sat) − 1.5 Vdc Base −Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc) VBE(on) − 2.0 Vdc fT 125 − MHz SMALL− SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (Note 2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. 2. fT = |hfe| S ftest. ORDERING INFORMATION Package Shipping † TO−92 5000 Units / Box TO−92 (Pb−Free) 5000 Units / Box TO−92 2000 / Tape & Reel TO−92 (Pb−Free) 2000 / Tape & Reel TO−92 2000 / Ammo Pack TO−92 (Pb−Free) 2000 / Ammo Pack TO−92 2000 / Ammo Pack TO−92 (Pb−Free) 2000 / Ammo Pack TO−92 2000 / Ammo Pack TO−92 (Pb−Free) 2000 / Ammo Pack TO−92 5000 Units / Box TO−92 (Pb−Free) 5000 Units / Box TO−92 2000 / Tape & Reel TO−92 (Pb−Free) 2000 / Tape & Reel TO−92 2000 / Ammo Pack TO−92 (Pb−Free) 2000 / Ammo Pack Device MPSA13 MPSA13G MPSA13RLRA MPSA13RLRAG MPSA13RLRM MPSA13RLRMG MPSA13RLRP MPSA13RLRPG MPSA13ZL1 MPSA13ZL1G MPSA14 MPSA14G MPSA14RLRA MPSA14RLRAG MPSA14RLRP MPSA14RLRPG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MPSA13, MPSA14 RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) 2.0 BANDWIDTH = 1.0 Hz RS ≈ 0 200 BANDWIDTH = 1.0 Hz i n, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 500 100 10 mA 50 100 mA 20 IC = 1.0 mA 10 1.0 0.7 0.5 IC = 1.0 mA 0.3 0.2 100 mA 0.1 0.07 0.05 10 mA 0.03 5.0 10 20 50 100 200 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) 50k 100k 0.02 10 20 50 100 200 50k 100k Figure 3. Noise Current 14 200 BANDWIDTH = 10 Hz TO 15.7 kHz 12 BANDWIDTH = 10 Hz TO 15.7 kHz 100 NF, NOISE FIGURE (dB) VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) Figure 2. Noise Voltage 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) IC = 10 mA 70 50 100 mA 30 20 1.0 mA 10 1.0 2.0 10 10 mA 8.0 100 mA 6.0 4.0 IC = 1.0 mA 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kW) 500 1000 0 1.0 Figure 4. Total Wideband Noise Voltage 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kW) Figure 5. Wideband Noise Figure http://onsemi.com 3 500 1000 MPSA13, MPSA14 SMALL−SIGNAL CHARACTERISTICS 4.0 |h fe |, SMALL−SIGNAL CURRENT GAIN C, CAPACITANCE (pF) 20 TJ = 25°C 10 7.0 Cibo Cobo 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 VCE = 5.0 V f = 100 MHz TJ = 25°C 2.0 1.0 0.8 0.6 0.4 0.2 0.5 40 1.0 200k hFE , DC CURRENT GAIN TJ = 125°C 100k 70k 50k 25°C 30k 20k 10k 7.0k 5.0k −55 °C VCE = 5.0 V 3.0k 2.0k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 TJ = 25°C 2.5 IC = 10 mA RθV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C V, VOLTAGE (VOLTS) 1.4 VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 VCE(sat) @ IC/IB = 1000 5.0 7.0 10 50 mA 250 mA 500 mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) 500 1000 Figure 9. Collector Saturation Region 1.6 0.6 500 3.0 Figure 8. DC Current Gain 0.8 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 7. High Frequency Current Gain VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 6. Capacitance 2.0 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 −1.0 −2.0 *APPLIES FOR IC/IB ≤ hFE/3.0 25°C TO 125°C *RqVC FOR VCE(sat) −55 °C TO 25°C −3.0 25°C TO 125°C −4.0 qVB FOR VBE −5.0 −55 °C TO 25°C −6.0 5.0 7.0 10 Figure 10. “On” Voltages 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 11. Temperature Coefficients http://onsemi.com 4 500 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MPSA13, MPSA14 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.05 SINGLE PULSE 0.1 0.07 0.05 SINGLE PULSE ZqJC(t) = r(t) • RqJCTJ(pk) − TC = P(pk) ZqJC(t) ZqJA(t) = r(t) • RqJATJ(pk) − TA = P(pk) ZqJA(t) 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k Figure 12. Thermal Response IC, COLLECTOR CURRENT (mA) 1.0k 700 500 300 200 FIGURE A 1.0 ms TA = 25°C tP TC = 25°C 100 ms PP 1.0 s 100 70 50 t1 30 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 20 10 PP 0.4 0.6 1/f t DUTYCYCLE + t1f + 1 tP PEAK PULSE POWER = PP 40 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data http://onsemi.com 5 MPSA13, MPSA14 PACKAGE DIMENSIONS TO−92 TO−226AA CASE 29−11 ISSUE AL A B R P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X−X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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