BC368 (NPN), BC369 (PNP) Amplifier Transistors Voltage and Current are Negative for PNP Transistors Features http://onsemi.com • Pb−Free Packages are Available* COLLECTOR 2 COLLECTOR 2 3 BASE 3 BASE MAXIMUM RATINGS Rating NPN Symbol Value Unit Collector −Emitter Voltage VCEO 20 Vdc Collector −Emitter Voltage VCES 25 Vdc Emitter −Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 1.0 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 Watt 12 mW/°C −55 to +150 °C Operating and Storage Junction Temperature Range TJ, Tstg Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. PNP 1 EMITTER 1 EMITTER MARKING DIAGRAM CASE 29 TO−92 STYLE 14 1 2 3 BC36x = Specific Device Code x = 8 or 9 Y = Year WW = Work Week ORDERING INFORMATION THERMAL CHARACTERISTICS Package Shipping† BC368 TO−92 5000 Units/Box BC368ZL1 TO−92 2000/Ammo Pack TO−92 (Pb−Free) 2000/Ammo Pack BC369 TO−92 5000 Units/Box BC369ZL1 TO−92 2000/Ammo Pack TO−92 (Pb−Free) 2000/Ammo Pack Device Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RJA 200 °C/W Thermal Resistance, Junction−to−Case RJC 83.3 °C/W BC 36x YWW BC368ZL1G BC369ZL1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2004 May, 2004 − Rev. 4 1 Publication Order Number: BC368/D BC368 (NPN), BC369 (PNP) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = 10 mA, IB = 0) V(BR)CEO 20 − − Vdc Collector −Base Breakdown Voltage (IC = 100 A, IE = 0 ) V(BR)CBO 25 − − Vdc Emitter −Base Breakdown Voltage (IE = 100 A, IC = 0) V(BR)EBO 5.0 − − Vdc Collector Cutoff Current (VCB = 25 V, IE = 0) (VCB = 25 V, IE = 0, TJ = 150°C) ICBO − − − − 10 1.0 Adc mAdc Emitter Cutoff Current (VEB = 5.0 V, IC = 0) IEBO − − 10 Adc 50 85 170 60 − − − − − 375 375 − fT 65 − − MHz Collector−Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA) VCE(sat) − − 0.5 V Base−Emitter On Voltage (IC = 1.0 A, VCE = 1.0 V) VBE(on) − − 1.0 V OFF CHARACTERISTICS ON CHARACTERISTICS hFE DC Current Gain (VCE = 10 V, IC = 5.0 mA) (VCE = 1.0 V, IC = 0.5 A) BC368, 369 BC368−25 (VCE = 1.0 V, IC = 1.0 A) Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 20 MHz) http://onsemi.com 2 − BC368 (NPN), BC369 (PNP) 1.0 VCE , COLLECTOR VOLTAGE (VOLTS) hFE, CURRENT GAIN 200 100 70 50 20 VCE = 1.0 V TJ = 25°C 10 20 200 50 100 IC, COLLECTOR CURRENT (mA) 500 1000 TJ = 25°C 0.8 0.6 1000 mA 500 mA 0.2 IC = 10 mA 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IB, BASE CURRENT (mA) 250 mA 20 50 100 Figure 2. Collector Saturation Region TJ = 25°C θ VB , TEMPERATURE COEFFICIENT (mV/ °C) −0.8 1.0 VBE(sat) @ IC/IB = 10 0.8 V, VOLTAGE (VOLTS) 100 mA 0.4 Figure 1. DC Current Gain VBE(on) @ VCE = 1.0 V 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 1.0 2.0 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) −1.2 −1.6 −2.0 VB for VBE −2.4 −2.8 1.0 2.0 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) Figure 4. Temperature Coefficient Figure 3. “On” Voltages 300 160 TJ = 25°C 200 C, CAPACITANCE (pF) f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz) 50 mA 100 70 VCE = 10 V TJ = 25°C f = 20 MHz 50 30 10 20 50 120 80 Cibo 40 Cobo 100 200 500 0 Cobo Cibo 1000 5.0 1.0 10 2.0 15 3.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 5. Current−Gain — Bandwidth Product Figure 6. Capacitance http://onsemi.com 3 20 4.0 25 5.0 BC368 (NPN), BC369 (PNP) PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K D X X G J H V C SECTION X−X 1 N DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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