¡ Semiconductor 1A MR27V801D 1,048,576-Word x 8-Bit One Time PROM DESCRIPTION The MR27V801D is a 8Mbit electrically Programmable Read-Only Memory organized as 1,048,576 word x 8bit. The MR27V801D operates on a single +3V-3.3V power supply and is TTL compatible. Since the MR27V801D operates asynchronously , external clocks are not required , making this device easy-to-use. The MR27V801D is suitable as large-capacity fixed memory for microcomputers and data terminals. It is manufactured using a CMOS double silicon gate technology and is offered in 32-pin DIP, 32-pin SOP or 32-pin TSOP packages. FEATURES • 1,048,576 word x 8bit • Single +3V-3.3V power supply • Access time 100ns access time (Vcc=+3V) 80ns access time (Vcc=+3.3V) • Input / Output TTL compatible • Three-state output • Packages 32-pin plastic DIP (DIP32-P-600-2.54) (Product name : MR27V801DRA) 32-pin plastic SOP (SOP32-P-525-1.27-K) (Product name : MR27V801DMA) 32-pin plastic TSOP (TSOP I 32-P-814-0.50-K) (Product name : MR27V801DTA) November 1999 1/10 MR27V801D PIN CONFIGURATION (TOP VIEW) A19 1 32 VCC A19 1 32 VCC A16 2 31 A18 A16 2 31 A18 A15 3 30 A17 A15 3 30 A17 A12 4 29 A14 A12 4 29 A14 A7 5 28 A13 A7 5 28 A13 A6 6 27 A8 A6 6 27 A8 A5 7 26 A9 A5 7 26 A9 A4 8 25 A11 A4 8 25 A11 A3 9 24 OE/Vpp A3 9 24 OE/Vpp A2 10 23 A10 A2 10 23 A10 A1 11 22 CE A1 11 22 CE A0 12 21 D7 A0 12 21 D7 D0 13 20 D6 D0 13 20 D6 D1 14 19 D5 D1 14 19 D5 D2 15 VSS 16 18 D4 D2 15 VSS 16 18 D4 17 D3 32-pin DIP 17 D3 32-pin SOP A5 A7 A15 A19 A18 A14 A11 A8 VCC A6 A12 A13 A9 A4 A16 A17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 32-pin TSOP 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 D3 D5 D7 A3 A1 D0 D2 A10 VSS D4 D6 A2 D1 CE OE/Vpp A0 PIN NAMES FUNCTIONS A0 - A19 Address input D0 - D7 Data output CE Chip enable OE/VPP Output enable / Program power supply voltage VCC Power supply voltage VSS GND 2/10 MR27V801D BLOCK DIAGRAM CE PGM Row Decoder OE Memory Matrix 1,048,576X8-Bit Column Decoder A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 Address Buffer CE OE/VPP Multiplexer Output Buffer D0 D1 D2 D3 D4 D5 D6 D7 FUNCTION TABLE MODE READ CE L OE/VPP L VCC 3.0V to 3.3V OUTPUT DISABLE L H STAND-BY H * PROGRAM L PROGRAM INHIBIT H PROGRAM VERIFY L 9.75V L D0 - D7 DOUT Hi-Z Hi-Z DIN 4.0V Hi-Z DOUT *: Don't Care 3/10 MR27V801D ABSOLUTE MAXIMUM RATINGS Symbol Parameter Operating temperature under bias Topr Storage temperature Tstg Condition Output voltage VO Power supply voltage Program power supply voltage VCC VPP Power dissipation per package PD Unit -55 to 125 °C °C -0.5 to VCC + 0.5 V -0.5 to VCC + 0.5 V -0.5 to 5 V - VI Input voltage Value 0 to 70 relative to VSS -0.5 to 11.5 V 1.0 W - RECOMMENDED OPERATING CONDITIONS (Ta=0 to 70°C) VCC power supply voltage Parameter Symbol VCC VPP power supply voltage OE/VPP Input "H" level Input "L" level VIH Condition VCC=2.7V - 3.6V VIL Min. 2.7 Typ. - Max. 3.6 Unit V -0.5 VCC+0.5 V 2.2 - VCC+0.5* V -0.5** - 0.6 V Voltage is relative to Vss * : Vcc+1.5V (Max.) when pulse width of overshoot is less than 10nS. ** : -1.5V (Min.) when pulse width of undershoot is less than 10nS. 4/10 MR27V801D ELECTRICAL CHARACTERISTICS (Read operation) DC Characteristics 1 (VCC=3V±0.3V, Ta=0 to 70°C) Parameter Input leakage current Output leakage current VCC power supply current (Standby) VCC power supply current (Read) Symbol ILI Condition VI=0 to Vcc Min. - Typ. - Max. 10 Unit µA ILO VO=0 to Vcc - - 10 µA ICCSC CE=VCC - µA CE=VIH - 50 ICCST 1 mA - - 25 mA µA ICCA CE=VIL,OE/VPP=VIH tc=100ns VPP power supply current IPP - 10 Input "H" level OE/VPP=VCC - - VIH 2.2 - VCC+0.5* V Input "L" level VIL - -0.5** - 0.6 V Output "H" level VOH IOH=-400µA - - V Output "L" level VOL IOL=2.1mA 2.4 - - 0.4 V Voltage is relative to Vss * : Vcc+1.5V (Max.) when pulse width of overshoot is less than 10nS. ** : -1.5V (Min.) when pulse width of undershoot is less than 10nS. DC Characteristics 2 (VCC=3.3V±0.3V, Ta=0 to 70°C) Parameter Input leakage current Output leakage current VCC power supply current (Standby) Symbol ILI Condition VI=0 to Vcc Min. - Typ. - Max. 10 Unit µA ILO VO=0 to Vcc - - 10 µA ICCSC CE=VCC µA CE=VIH - 50 ICCST - 1 mA - - 30 mA VCC power supply current (Read) ICCA VPP power supply current IPP Input "H" level Input "L" level CE=VIL,OE/VPP=VIH tc=80ns - - 10 µA VIH OE/VPP=VCC - 2.2 - VCC+0.5* V VIL - -0.5** - 0.6 V Output "H" level VOH IOH=-400µA - V VOL IOL=2.1mA 2.4 - - Output "L" level - 0.4 V Voltage is relative to Vss * : Vcc+1.5V (Max.) when pulse width of overshoot is less than 10nS. ** : -1.5V (Min.) when pulse width of undershoot is less than 10nS. 5/10 MR27V801D AC Characteristics 1 (VCC=3V±0.3V, Ta=0 to 70°C) Parameter Symbol Min. TC Condition - TACC CE=OE/VPP=VIL CE access time TCE OE access time TOE TCHZ Address cycle time Address access time Output disable time Output hold time Unit 100 Max. - - 100 ns OE/VPP=VIL - 100 ns CE=VIL - 50 ns ns OE/VPP=VIL 0 30 ns TOHZ CE=VIL 0 ns TOH CE=OE/VPP=VIL 0 25 - Measurement conditions Input signal level Input timing reference level Output load Output timing reference level ns 0V/3V 0.8V/2.0V 100pF 0.8V/2.0V AC Characteristics 2 (VCC=3.3V±0.3V, Ta=0 to 70°C) Parameter Symbol Condition - Min. TC 80 Max. - Address access time TACC CE=OE/VPP=VIL - 80 ns CE access time TCE OE/VPP=VIL - 80 ns OE access time TOE CE=VIL - 40 ns TCHZ OE/VPP=VIL 0 30 ns TOHZ CE=VIL 0 CE=OE/VPP=VIL 25 - ns 0 Address cycle time Output disable time Output hold time TOH Measurement conditions Input signal level Input timing reference level Output load Output timing reference level Unit ns ns 0V/3V 0.8V/2.0V 100pF 0.8V/2.0V 2.08V 800ohms Output 100pF 6/10 MR27V801D TIMING CHART (READ CYCLE) tC A0 - A19 tOH tCE CE tCHZ tOE OE/VPP tOHZ tACC D0 - D7 Valid Data Hi-Z Hi-Z PIN Capacitance (VCC=3.3V, Ta=25°C, f=1MHz) Parameter Input OE/VPP Output ( Symbol CIN1 CIN2 COUT Condition VI=0V VO=0V Min. - Typ. - 8 (10) - - 60 - - 10 (12) Max. Unit pF ) : DIP only 7/10 MR27V801D ELECTRICAL CHARACTERISTICS (Programming operation) DC Characteristics (Ta=25°C±5°C) Symbol ILI Parameter Input leakage current VPP power supply current (Program) IPP2 VCC power supply current Condition VI=VCC+0.5V Min. - Typ. - Max. 10 Unit µA - - 50 mA ICC CE=VIL - - - 50 mA Input "H" level VIH - 3.0 - VCC+0.5 V Input "L" level - -0.5 2.4 - Output "H" level VIL VOH - 0.8 - V V Output "L" level VOL - - 0.45 V Program voltage VPP VCC 9.5 3.9 9.75 10.0 V 4.0 4.1 V VCC power supply voltage IOH=-400µA IOL=2.1mA - Voltage is relative to Vss AC Characteristics (Vcc=4.0V±0.1V,Vpp=9.75V±0.25V,Ta=25°C±5°C) Symbol TAS Condition - Min. 100 Typ. - TDS 100 Address hold time TAH - 2 - - Data hold time Output float delay from CE TDH - 100 - - TCHZ - 0 - 100 TVS 2 - - ns ns µs 9 10 11 µs ns Parameter Address set-up time Data set-up time Max. VPP voltage set-up time Program pulse width TPW - Data valid from CE TCE - - - Address hold from CE high TAHC - 0 - 100 - VPP voltage recovery time TVR - 2 - - Unit ns ns µs ns µs Pin Check Function Pin Check Function is to check contact between each device-pin and each socket-lead with EPROM programmer. Setting up address as the following condition call the preprogrammed codes on device outputs. (Vcc=3.3V±0.3V,CE=VIL,OE/Vpp=VIL,Ta=25°C±5°C) A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 DATA 0 1 0 1 0 1 0 1 0 VH* 1 1 0 1 0 1 0 1 0 1 AA 1 0 1 0 1 0 1 0 1 VH* 0 0 1 0 1 0 1 0 1 0 55 Other conditions FF * :VH=8V±0.25V 8/10 MR27V801D Consecutive Programming Waveforms A0 - A19 tAS tAH tPW CE tVS 9.75V OE/VPP tDS tDH Din D0 - D7 Din Consecutive Program Verify Waveforms A0 - A19 tAS tAHC CE tVR OE/VPP tCE D0 - D7 tCHZ Dout Dout 9/10 MR27V801D Programming / Verify Flow Chart Programming Verify Start Start NO Bad insertion Pin Check NO Pin Check Bad insertion OK OK Address = First location Address = First location VCC=3.0V VCC=4.0V Verify (One Byte) NG VPP=9.75V PASS VCC=3.6V Program 10µs NO Increment Address Verify (One Byte) Last Address ? NG PASS YES Device Passed Address = First location Device Failed NG Verify (One Byte) PASS NO Increment Address Last Address ? YES VCC=3.0V NG Verify (One Byte) PASS Device Passed Device Failed 10/10