Freescale Semiconductor Technical Data Document Number: MRF6S21050L Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 450 mA, Pout = 11.5 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 16 dB Drain Efficiency — 27.7% IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 50 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. 2110 - 2170 MHz, 11.5 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465E - 04, STYLE 1 NI - 400 MRF6S21050LR3 CASE 465F - 04, STYLE 1 NI - 400S MRF6S21050LSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +68 Vdc Gate- Source Voltage VGS - 0.5, +12 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 151 0.86 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF6S21050LR3 MRF6S21050LSR3 1 Table 2. Thermal Characteristics Characteristic Value (1,2) Symbol Thermal Resistance, Junction to Case Case Temperature 80°C, 50 W CW Case Temperature 76°C, 12 W CW RθJC Unit °C/W 1.16 1.28 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1C (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) III (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μAdc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 450 mAdc) VGS(Q) 2 2.9 4 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 1.1 Adc) VDS(on) — 0.21 0.3 Vdc gfs — 5.3 — S Crss — 0.75 — pF Characteristic Off Characteristics On Characteristics Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) Dynamic Characteristics (3) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, Pout = 11.5 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 15 16 Drain Efficiency ηD 26 27.7 — % Intermodulation Distortion IM3 — - 37 - 35 dBc ACPR — - 40 - 38 dBc IRL — - 15 -9 dB Adjacent Channel Power Ratio Input Return Loss 18 dB 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Part is internally matched both on input and output. MRF6S21050LR3 MRF6S21050LSR3 2 RF Device Data Freescale Semiconductor B1 R1 VBIAS VSUPPLY + C7 + C6 C5 C4 C3 C8 Z6 RF INPUT Z1 Z2 Z3 Z4 Z8 C10 C11 Z9 Z10 + C13 + C14 RF OUTPUT C2 Z5 C1 Z1, Z10 Z2 Z3 Z4 Z5 Z7 C9 + C12 DUT 0.750″ x 0.084″ Microstrip 0.905″ x 0.084″ Microstrip 0.435″ x 0.173″ Microstrip 0.073″ x 0.333″ Microstrip 0.070″ x 0.333″ Microstrip Z6 Z7 Z8 Z9 PCB 0.113″ x 0.590″ Microstrip 0.325″ x 0.590″ Microstrip 0.214″ x 0.150″ Microstrip 0.723″ x 0.084″ Microstrip Arlon GX - 0300- 5022, 0.030″, εr = 2.5 Figure 1. MRF6S21050LR3(LSR3) Test Circuit Schematic Table 5. MRF6S21050LR3(LSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Bead, Surface Mount 2743019447 Fair- Rite C1, C2, C3, C8 6.8 pF Chip Capacitors 100B6R8CP500X ATC C4 0.01 μF Chip Capacitor (1825) C1825C103J1RAC Kemet C5, C11 2.2 μF, 50 V Chip Capacitors (1825) C1825C225J5RAC Kemet C6 22 μF, 25 V Tantalum Capacitor ECS - T1ED226R Panasonic TE Series C7 47 μF, 16 V Tantalum Capacitor T491D476K016AS Kemet C9, C10 10 μF, 50 V Chip Capacitors (2220) GRM55DR61H106KA88B Murata C12 47 μF, 50 V Electrolytic Capacitor MVK50VC47RM8X10TP Nippon C13, C14 220 μF, 50 V Electrolytic Capacitors MVY50VC221MJ10TP Nippon R1 3.3 W, 1/4 W Chip Resistor (1210) ERJ - 14YJ3R3U Dale/Vishay MRF6S21050LR3 MRF6S21050LSR3 RF Device Data Freescale Semiconductor 3 C11 C10 C12 C13 C3 B1 C8 R1 C9 C4, C5* C7 C6 C14 CUT OUT AREA C1 C2 MRF6S21050L Rev. 1 * C4 on bottom, C5 on top. Figure 2. MRF6S21050LR3(LSR3) Test Circuit Component Layout MRF6S21050LR3 MRF6S21050LSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 16.3 26 VDD = 28 Vdc, Pout = 11.5 W (Avg.) 16.1 I = 450 mA, 2−Carrier W−CDMA DQ 16 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% 15.9 Probability (CCDF) Gps −32 IRL −34 −36 IM3 15.6 15.5 24 22 15.8 15.7 28 IM3 (dBc), ACPR (dBc) Gps, POWER GAIN (dB) 16.2 30 −38 −40 ACPR 15.4 −42 2100 2110 2120 2130 2140 2150 2160 2170 2180 2190 2200 −10 −20 −30 −40 −50 −60 IRL, INPUT RETURN LOSS (dB) ηD ηD, DRAIN EFFICIENCY (%) 16.4 f, FREQUENCY (MHz) Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 11.5 Watts 41 15.9 15.7 15.6 15.5 40 39 VDD = 28 Vdc, Pout = 23 W (Avg.) IDQ = 450 mA, 2−Carrier W−CDMA 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 38 Gps 37 −24 15.4 −26 15.3 −28 15.2 IRL IM3 IM3 (dBc), ACPR (dBc) Gps, POWER GAIN (dB) 15.8 −30 −32 ACPR 15 −34 2100 2110 2120 2130 2140 2150 2160 2170 2180 2190 2200 15.1 −10 −15 −20 −25 −30 −35 IRL, INPUT RETURN LOSS (dB) ηD ηD, DRAIN EFFICIENCY (%) 16 f, FREQUENCY (MHz) Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 23 Watts 17.5 17 Gps, POWER GAIN (dB) 560 mA 16.5 450 mA 16 15.5 335 mA 15 14.5 VDD = 28 Vdc, f1 = 2135 MHz f2 = 2145 MHz, Two−Tone Measurements, 10 MHz Tone Spacing 225 mA 14 13.5 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) −10 IDQ = 675 mA VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two−Tone Measurements, 10 MHz Tone Spacing −20 675 mA −30 IDQ = 225 mA −40 335 mA −50 560 mA 450 mA −60 0.1 1 10 100 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S21050LR3 MRF6S21050LSR3 RF Device Data Freescale Semiconductor 5 −10 52 VDD = 28 Vdc, Pout = 60 W (PEP), IDQ = 450 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz 3rd Order −30 5th Order −40 7th Order −50 50 P1dB = 47.89 dBm (61.52 W) 49 Actual 48 47 46 VDD = 28 Vdc, IDQ = 450 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 2140 MHz 45 −60 0.01 1 0.1 44 28 100 10 Ideal P3dB = 48.66 dBm (73.43 W) 51 Pout, OUTPUT POWER (dBm) −20 29 30 31 32 33 35 34 TWO−TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing Figure 8. Pulse CW Output Power versus Input Power 40 35 30 36 −20 VDD = 28 Vdc, IDQ = 450 mA, f1 = 2135 MHz f2 = 2145 MHz, 2 x W−CDMA, 10 MHz @ 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) IM3 −25 −30 −35 25 ACPR 20 −40 Gps 15 −45 10 −50 −55 ηD 5 IM3 (dBc), ACPR (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS 0 −60 0.2 10 1 30 Pout, OUTPUT POWER (WATTS) AVG. W−CDMA Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 16.5 48 15 40 14.5 32 24 14 13.5 VDD = 28 Vdc IDQ = 450 mA f = 2140 MHz ηD 16 8 10 15.5 15 14.5 14 13.5 16 V 13 13 3 16 Gps, POWER GAIN (dB) 15.5 IDQ = 450 mA f = 2140 MHz 16.5 56 Gps ηD, DRAIN EFFICIENCY (%) 16 Gps, POWER GAIN (dB) 17 64 100 12.5 20 V 32 V 28 V 24 V VDD = 12 V 12 0 10 20 30 40 50 60 70 80 90 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Drain Efficiency versus CW Output Power Figure 11. Power Gain versus Output Power 100 MRF6S21050LR3 MRF6S21050LSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS MTTF FACTOR (HOURS x AMPS2) 109 108 107 106 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 12. MTTF Factor versus Junction Temperature W - CDMA TEST SIGNAL 100 +20 3.84 MHz Channel BW +30 0 −10 1 (dB) PROBABILITY (%) 10 0.1 W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF 0.01 −20 −30 −40 −50 −60 0.001 −70 0.0001 0 2 4 6 8 10 PEAK−TO−AVERAGE (dB) Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal −ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW −IM3 in 3.84 MHz BW −80 −25 −20 −15 −10 −5 0 5 10 +IM3 in 3.84 MHz BW 15 20 25 f, FREQUENCY (MHz) Figure 14. 2-Carrier W-CDMA Spectrum MRF6S21050LR3 MRF6S21050LSR3 RF Device Data Freescale Semiconductor 7 Zo = 25 Ω f = 2200 MHz Zload f = 2080 MHz Zsource f = 2200 MHz f = 2080 MHz VDD = 28 Vdc, IDQ = 450 mA, Pout = 11.5 W Avg. f MHz Zsource Ω Zload Ω 2080 2090 2100 2110 4.09 3.74 3.95 4.44 - j14.65 j13.95 j13.36 j13.00 2.36 2.25 2.40 2.68 - j7.52 j7.11 j6.78 j6.59 2120 2130 2140 2150 2160 2170 2180 2190 2200 5.03 5.55 5.76 5.57 4.86 4.04 3.69 3.91 4.41 - j12.89 j13.05 j13.26 j13.70 j13.92 j13.61 j12.91 j12.44 j12.32 2.99 3.26 3.32 3.20 2.82 2.44 2.33 2.49 2.77 - j6.52 j6.64 j6.68 j6.87 j6.93 j6.70 j6.29 j6.05 j5.96 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF6S21050LR3 MRF6S21050LSR3 8 RF Device Data Freescale Semiconductor NOTES MRF6S21050LR3 MRF6S21050LSR3 RF Device Data Freescale Semiconductor 9 NOTES MRF6S21050LR3 MRF6S21050LSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 2X G bbb Q M T B M A M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. INFORMATION ONLY: CORNER BREAK (4X) TO BE .060±.005 (1.52±0.13) RADIUS OR .06±.005 (1.52±0.13) x 45° CHAMFER. B SEE NOTE 4 1 3 2X K B 2 DIM A B C D E F G H K M N Q R S aaa bbb ccc 2X D bbb M T A B M M N (LID) ccc M T A M B ccc M aaa M T A B M M A M F T M (INSULATOR) B M R (LID) C E T A M S (INSULATOR) SEATING PLANE aaa M T A H B M M INCHES MIN MAX .795 .805 .380 .390 .125 .163 .275 .285 .035 .045 .004 .006 .600 BSC .057 .067 .092 .122 .395 .405 .395 .405 .120 .130 .395 .405 .395 .405 .005 BSC .010 BSC .015 BSC MILLIMETERS MIN MAX 20.19 20.44 9.65 9.9 3.17 4.14 6.98 7.24 0.89 1.14 0.10 0.15 15.24 BSC 1.45 1.7 2.33 3.1 10 10.3 10 10.3 3.05 3.3 10 10.3 10 10.3 0.127 BSC 0.254 BSC 0.381 BSC STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE A CASE 465E - 04 ISSUE F NI - 400 MRF6S21050LR3 2X D bbb M T A M B NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M 1 2 2X K ccc M T A M N E B R M (LID) ccc (LID) C M T A M B M M B M F 3 A T A (FLANGE) M aaa M T A M SEATING PLANE (INSULATOR) B M H S (INSULATOR) aaa B (FLANGE) M T A B DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX .395 .405 .395 .405 .125 .163 .275 .285 .035 .045 .004 .006 .057 .067 .092 .122 .395 .405 .395 .405 .395 .405 .395 .405 .005 REF .010 REF .015 REF MILLIMETERS MIN MAX 10.03 10.29 10.03 10.29 3.18 4.14 6.98 7.24 0.89 1.14 0.10 0.15 1.45 1.70 2.34 3.10 10.03 10.29 10.03 10.29 10.03 10.29 10.03 10.29 0.127 REF 0.254 REF 0.38 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465F - 04 ISSUE E NI - 400S MRF6S21050LSR3 MRF6S21050LR3 MRF6S21050LSR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF6S21050LR3 MRF6S21050LSR3 Document Number: MRF6S21050L Rev. 1, 5/2006 12 RF Device Data Freescale Semiconductor