Freescale Semiconductor Technical Data MRF6S9130HR3/HSR3 replaced by MRFE6S9130HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9130HR3 MRF6S9130HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. • Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 19.2 dB Drain Efficiency — 30.5% ACPR @ 750 kHz Offset — - 48.1 dBc in 30 kHz Bandwidth GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ = 950 mA, Pout = 130 Watts, Full Frequency Band (921 - 960 MHz) Power Gain — 18 dB Drain Efficiency — 63% GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 950 mA, Pout = 56 Watts Avg., Full Frequency Band (921 - 960 MHz) Power Gain — 18.5 dB Drain Efficiency — 44% Spectral Regrowth @ 400 kHz Offset = - 63 dBc Spectral Regrowth @ 600 kHz Offset = - 75 dBc EVM — 1.5% rms • Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 130 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. LIFETIME BUY 880 MHz, 27 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF6S9130HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF6S9130HSR3 Table 1. Maximum Ratings Symbol Value Unit Drain- Source Voltage Rating VDSS - 0.5, +68 Vdc Gate- Source Voltage VGS - 0.5, +12 Vdc Storage Temperature Range Tstg - 65 to +150 °C TC 150 °C TJ 225 °C Symbol Value (2,3) Unit Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 130 W CW Case Temperature 75°C, 27 W CW RθJC 0.45 0.51 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2005 - 2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor °C/W LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 Document Number: MRF6S9130H Rev. 5, 8/2008 MRF6S9130HR3 MRF6S9130HSR3 1 Table 3. ESD Protection Characteristics Class 1A (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 μAdc) VGS(th) 1 2.1 3 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 950 mAdc, Measured in Functional Test) VGS(Q) 2 2.9 4 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2.74 Adc) VDS(on) — 0.22 0.5 Vdc Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 66 — pF Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.6 — pF Characteristic Off Characteristics LIFETIME BUY On Characteristics Dynamic Characteristics (1) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg. N - CDMA, f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain Gps 18 19.2 21 dB Drain Efficiency ηD 29 30.5 — % ACPR — - 48.1 - 46 dBc IRL — - 30 -9 dB Adjacent Channel Power Ratio Input Return Loss Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 56 W Avg., 921 MHz<Frequency<960 MHz Power Gain Gps — 18.5 — dB Drain Efficiency ηD — 44 — % Error Vector Magnitude EVM — 1.5 — % rms Spectral Regrowth at 400 kHz Offset SR1 — - 63 — dBc Spectral Regrowth at 600 kHz Offset SR2 — - 75 — dBc Typical CW Performances (In Freescale GSM Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 130 W, 921 MHz<Frequency<960 MHz Power Gain Gps — 18 — dB Drain Efficiency ηD — 63 — % Input Return Loss IRL — - 12 — dB P1dB — 135 — W Pout @ 1 dB Compression Point, CW (f = 940 MHz) LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 Test Methodology Human Body Model (per JESD22 - A114) 1. Part is internally matched on input. MRF6S9130HR3 MRF6S9130HSR3 2 RF Device Data Freescale Semiconductor B2 + + + VSUPPLY L2 + C7 Z1 Z2 C6 Z3 L1 Z4 Z5 Z9 Z6 Z7 Z10 Z11 Z12 RF OUTPUT Z13 Z14 Z15 Z16 Z17 C13 Z8 C8 C9 C10 C11 C12 C1 C2 LIFETIME BUY Z1 Z2 Z3 Z4 Z5 Z6, Z11 C3 C4 0.383″ x 0.080″ Microstrip 1.250″ x 0.080″ Microstrip 0.190″ x 0.220″ Microstrip 0.127″ x 0.220″ Microstrip 0.173″ x 0.220″ Microstrip 0.200″ x 0.220″ x 0.620″ Taper C5 Z7 Z8 Z9 Z10 Z12 Z13 DUT 0.220″ x 0.630″ Microstrip 0.077″ x 0.630″ Microstrip 0.146″ x 0.630″ Microstrip 0.152″ x 0.630″ Microstrip 0.184″ x 0.220″ Microstrip 0.261″ x 0.220″ Microstrip Z14 Z15 Z16 Z17 PCB 0.045″ x 0.220″ Microstrip 0.755″ x 0.080″ Microstrip 0.496″ x 0.080″ Microstrip 0.384″ x 0.080″ Microstrip Arlon CuClad 250GX - 0300- 55- 22, 0.030″, εr = 2.55 Figure 1. MRF6S9130HR3(SR3) Test Circuit Schematic Table 5. MRF6S9130HR3(SR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1, B2 Ferrite Beads, Short 2743019447 Fair Rite C1, C13, C14 47 pF Chip Capacitors ATC100B470JT500XT ATC C2 8.2 pF Chip Capacitor ATC100B8R2BT500XT ATC C3, C11 0.8- 8.0 pF Variable Capacitors, Gigatrim 27291SL Johanson C4, C5 12 pF Chip Capacitors ATC100B120JT500XT ATC C6 20 K pF Chip Capacitor ATC200B203KT50XT ATC C7, C16, C17, C18 10 μF, 35 V Tantalum Chip Capacitors T491D106K035AT Kemet C8, C9 10 pF Chip Capacitors ATC100B7R5JT500XT ATC C10 11 pF Chip Capacitor ATC100B110JT500XT ATC C12 0.6- 4.5 pF Variable Capacitor, Gigatrim 27271SL Johanson C15 0.56 μF, 50 V Chip Capacitor C1825C564J5GAC Kemet C19 470 μF, 63 V Electrolytic Capacitor EKME630ELL471MK25S United Chemi - Con L1, L2 12.5 nH Inductors A04T- 5 Coilcraft LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 C14 C15 C16 C17 C18 C19 VBIAS RF INPUT + B1 MRF6S9130HR3 MRF6S9130HSR3 RF Device Data Freescale Semiconductor 3 B2 900 MHz Rev 02 C7 C6 C16 C17 C18 C15 B1 C4 C8 L1 C14 L2 C1 C2 LIFETIME BUY C3 C5 CUT OUT AREA C10 C12 C9 C11 Figure 2. MRF6S9130HR3(SR3) Test Circuit Component Layout C13 LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 C19 MRF6S9130HR3 MRF6S9130HSR3 4 RF Device Data Freescale Semiconductor 32 19 30 18.5 ηD 18 Gps 17.5 28 VDD = 28 Vdc, Pout = 27 W (Avg.) IDQ = 950 mA, N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 26 IRL 17 −5 −46 −15 −48 16.5 16 −44 ACPR −50 −25 −35 15.5 −52 −45 15 −54 920 −55 840 850 860 870 880 890 900 910 19.5 44 41 ηD 38 18 Gps 17.5 17 IRL 35 VDD = 28 Vdc, Pout = 54 W (Avg.) IDQ = 950 mA, N−CDMA IS−95 Pilot, Sync Paging, Traffic Codes 8 Through 13 −34 −5 −36 −10 −38 16.5 16 ACPR −40 15.5 −42 15 −44 920 840 850 860 870 880 890 900 910 ACPR (dBc) 18.5 −15 −20 −25 −30 IRL, INPUT RETURN LOSS (dB) 47 19 f, FREQUENCY (MHz) Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 54 Watts Avg. 20 −10 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1400 mA 19 Gps, POWER GAIN (dB) 20 ηD, DRAIN EFFICIENCY (%) Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 27 Watts Avg. Gps, POWER GAIN (dB) LIFETIME BUY f, FREQUENCY (MHz) 1100 mA 950 mA 18 700 mA 17 500 mA 16 VDD = 28 Vdc, f1 = 878.75 MHz, f2 = 881.25 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing VDD = 28 Vdc, f1 = 878.75 MHz, f2 = 881.25 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing −20 −30 IDQ = 500 mA 700 mA −40 −50 1400 mA 1100 mA 950 mA −60 15 1 10 100 400 1 10 100 LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 19.5 IRL, INPUT RETURN LOSS (dB) 34 ηD, DRAIN EFFICIENCY (%) 20 ACPR (dBc) Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS 400 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S9130HR3 MRF6S9130HSR3 RF Device Data Freescale Semiconductor 5 0 3rd Order −30 5th Order −40 7th Order −60 0.1 10 1 100 −30 20 −35 19 −40 30 −45 Gps −50 −55 ACPR ηD −60 100 150 0 1 51.5 VDD = 28 Vdc, IDQ = 950 mA 51 Pulsed CW, 8 μsec(on), 1 msec(off) 50.5 f = 880 MHz 50 31 31.5 32 32.5 33 33.5 34 34.5 35 35.5 36 36.5 37 Figure 8. Pulsed CW Output Power versus Input Power 40 10 Actual Figure 7. Intermodulation Distortion Products versus Tone Spacing VDD = 28 Vdc, IDQ = 950 mA, f = 880 MHz N−CDMA IS−95, Pilot, Sync, Paging Traffic Codes 8 Through 13 20 52.5 52 Pin, INPUT POWER (dBm) 60 50 P1dB = 51.8 dBm (151.36 W) TWO−TONE SPACING (MHz) ACPR (dBc) −50 54.5 54 53.5 53 10 70 60 Gps 18 50 17 40 16 30 15 20 VDD = 28 Vdc IDQ = 950 mA f = 880 MHz ηD 14 13 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. Pout, OUTPUT POWER (WATTS) CW Figure 9. Single - Carrier N - CDMA ACPR, Power Gain and Drain Efficiency versus Output Power Figure 10. Power Gain and Drain Efficiency versus CW Output Power 20 19.5 Gps, POWER GAIN (dB) 19 18.5 18 17.5 17 16.5 32 V 28 V 16 VDD = 24 V 15.5 15 14.5 IDQ = 950 mA f = 880 MHz 14 0 50 100 150 200 Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain versus Output Power 250 10 0 300 ηD, DRAIN EFFICIENCY (%) −20 Ideal P3dB = 52.54 dBm (179.47 W) 55 Pout, OUTPUT POWER (dBm) −10 55.5 LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 56 VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 950 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz Gps, POWER GAIN (dB) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) LIFETIME BUY IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS MRF6S9130HR3 MRF6S9130HSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 107 106 105 90 110 130 150 170 190 210 230 250 This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 27 W Avg., and ηD = 30.5%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 12. MTTF versus Junction Temperature N - CDMA TEST SIGNAL 100 −10 −20 10 −30 1 −40 −50 0.1 (dB) PROBABILITY (%) LIFETIME BUY TJ, JUNCTION TEMPERATURE (°C) IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 −60 −70 −80 −90 0.0001 0 2 4 6 8 10 1.2288 MHz Channel BW ................................................. .. .. . . ............. .. ... ... ... .. . . .. .. .. .. −ALT1 in 30 kHz +ALT1 in 30 kHz .. . . Integrated BW Integrated BW .... . . . .. ... . ................ ................... .... ..... . . . .. . . .. . . . . . . . . . . . ....... . ...... . ........... ................ ........ .............. ......... .. . ......... .... . . . . .......... . .................... ............... . . .. . . . . . .. .... . ............. . −ACPR in 30 kHz +ACPR in 30 kHz . . . ... .. . . . . . . . . ..................... . . ..... ...... Integrated BW Integrated BW ................ ...... .............. ..... ... ........ ....... ... −100 PEAK−TO−AVERAGE (dB) Figure 13. Single - Carrier CCDF N - CDMA −110 −3.6 −2.9 −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 f, FREQUENCY (MHz) Figure 14. Single - Carrier N - CDMA Spectrum 3.6 LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 MTTF (HOURS) 108 MRF6S9130HR3 MRF6S9130HSR3 RF Device Data Freescale Semiconductor 7 Zload f = 850 MHz Zo = 2 Ω f = 910 MHz LIFETIME BUY Zsource f = 850 MHz VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg. f MHz Zsource Ω Zload Ω 850 0.89 - j1.18 1.50 - j0.09 865 0.87 - j1.03 1.52 + j0.11 880 0.85 - j0.89 1.55 + j0.31 895 0.83 - j0.75 1.60 + j0.51 910 0.84 - j0.64 1.68 + j0.71 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08 f = 910 MHz load Figure 15. Series Equivalent Source and Load Impedance MRF6S9130HR3 MRF6S9130HSR3 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G Q bbb 2X 1 T A M M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 3 B K 2 (FLANGE) D bbb M T A B M M M bbb N R (INSULATOR) M T A M B M ccc M T A M M aaa M T A M ccc H B S (LID) M T A M B (LID) M (INSULATOR) B M C F E A T A SEATING PLANE DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE (FLANGE) CASE 465 - 06 ISSUE G NI - 780 MRF6S9130HR3 4X U (FLANGE) 4X Z (LID) B 1 K 2X 2 B (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. D bbb M T A M B M N (LID) ccc M R M T A M B M ccc M T A M M B M aaa M T A M S (INSULATOR) bbb M T A (LID) B M (INSULATOR) B M H C 3 E A A F T SEATING PLANE (FLANGE) CASE 465A - 06 ISSUE H NI - 780S MRF6S9130HSR3 DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF6S9130HR3 MRF6S9130HSR3 RF Device Data Freescale Semiconductor 9 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 5 Aug. 2008 Description • Listed replacement part and Device Migration notification reference number, p. 1 • Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality is standard, p. 1 • Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use of maximum temperature will affect MTTF” footnote added, p. 1 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in Functional Test”, On Characteristics table, p. 2 • Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 • Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3 • Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers, p. 3 • Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 6 • Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 • Added Product Documentation and Revision History, p. 10 MRF6S9130HR3 MRF6S9130HSR3 10 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800- 521- 6274 or +1 - 480- 768- 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2005 - 2006, 2008. All rights reserved. MRF6S9130HR3 MRF6S9130HSR3 Document RF DeviceNumber: Data MRF6S9130H Rev. 5, 8/2008 Freescale Semiconductor 11