FREESCALE MRF7S18125BHSR3

Freescale Semiconductor
Technical Data
Document Number: MRF7S18125BH
Rev. 0, 11/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF7S18125BHR3
MRF7S18125BHSR3
Designed for GSM and GSM EDGE base station applications with
frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulations.
GSM Application
• Typical GSM Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout =
125 Watts CW, f = 1930 MHz.
Power Gain — 16.5 dB
Drain Efficiency — 55%
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 1100 mA,
Pout = 57 Watts Avg., Full Frequency Band (1930 - 1990 MHz).
Power Gain — 17 dB
Drain Efficiency — 39%
Spectral Regrowth @ 400 kHz Offset = - 60 dBc
Spectral Regrowth @ 600 kHz Offset = - 74 dBc
EVM — 2.6% rms
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 125 Watts CW
Output Power
• Typical Pout @ 1 dB Compression Point ] 140 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
1930- 1990 MHz, 125 W CW, 28 V
GSM, GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF7S18125BHR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF7S18125BHSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81°C, 125 W CW
Case Temperature 81°C, 71 W CW
RθJC
0.31
0.35
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S18125BHR3 MRF7S18125BHSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 316 μAdc)
VGS(th)
1.2
1.9
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1100 mAdc)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage (1)
(VDD = 28 Vdc, ID = 1100 mAdc, Measured in Functional Test)
VGG(Q)
4
5.3
7
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 3.16 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.15
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
673
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
309
—
pF
Characteristic
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, Pout = 125 W CW, f = 1930 MHz
Power Gain
Gps
15
16.5
18
dB
Drain Efficiency
ηD
51
55
—
%
Input Return Loss
IRL
—
- 12
-7
dB
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF7S18125BHR3 MRF7S18125BHSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, 1930 - 1990 MHz Bandwidth
Pout @ 1 dB Compression Point
P1dB
—
140
—
—
10
—
W
IMD Symmetry @ 125 W PEP, Pout where IMD Third Order
Intermodulation ` 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
35
—
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 125 W CW
GF
—
1.02
—
dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout = 125 W CW
Φ
—
3.3
—
°
Delay
—
2.49
—
ns
Part - to - Part Insertion Phase Variation @ Pout = 125 W CW,
f = 1960 MHz, Six Sigma Window
ΔΦ
—
6.7
—
°
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.016
—
dB/°C
ΔP1dB
—
0.01
—
dBm/°C
Average Group Delay @ Pout = 125 W CW, f = 1960 MHz
Output Power Variation over Temperature
( - 30°C to +85°C)
MHz
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, Pout = 57 W
Avg., 1930 - 1990 MHz EDGE Modulation
Power Gain
Gps
—
17
—
dB
Drain Efficiency
ηD
—
39
—
%
Error Vector Magnitude
EVM
—
2.6
—
% rms
Spectral Regrowth at 400 kHz Offset
SR1
—
- 60
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
- 74
—
dBc
MRF7S18125BHR3 MRF7S18125BHSR3
RF Device Data
Freescale Semiconductor
3
Z13
R1
VBIAS
VSUPPLY
+
R2
C1
Z12
C8
R3
RF
INPUT
Z1
Z2
Z3
Z4
C2
C3
C14
C16 Z9
C15
C17
C11
C4
C6
Z6
Z7
Z5
C7
C9
Z8
RF
OUTPUT
Z11
C18 Z10
C10
DUT
C12
C13
Z14
Z1
Z2
Z3
Z4
Z5
Z6
Z7
0.227″ x 0.083″ Microstrip
0.697″ x 0.083″ Microstrip
0.618″ x 0.083″ Microstrip
0.568″ x 1.000″ Microstrip
0.092″ x 1.000″ Microstrip
0.095″ x 1.000″ Microstrip
0.565″ x 1.000″ Microstrip
Z8
Z9
Z10
Z11
Z12
Z13, Z14
PCB
C5
0.200″ x 0.083″ Microstrip
1.045″ x 0.083″ Microstrip
0.071″ x 0.083″ Microstrip
0.227″ x 0.083″ Microstrip
1.280″ x 0.080″ Microstrip
0.760″ x 0.080″ Microstrip
Taconic TLX - 8 RF35, 0.031″, εr = 2.55
Figure 1. MRF7S18125BHR3(HSR3) Test Circuit Schematic
Table 5. MRF7S18125BHR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
1 μF, 50 V Chip Capacitor
12065G105AT2A
AVX
C2, C3, C4, C5
4.7 μF, 50 V Chip Capacitors
GRM55ER71H475KA01L
Murata
C6
220 μF, 63 V Electrolytic Chip Capacitor
2222 136 68221
Vishay
C7, C8, C9, C10, C11
6.8 pF Chip Capacitors
ATC100B6R8BT500XT
ATC
C12, C13
1 pF Chip Capacitors
ATC100B1R0BT500XT
ATC
C14, C15, C16, C17, C18
0.2 pF Chip Capacitors
ATC100B0R2BT500XT
ATC
R1, R2
10 kΩ, 1/4 W Chip Resistors
CRCW12061001FKEA
Vishay
R3
10 Ω, 1/4 W Chip Resistor
CRCW120610R1FKEA
Vishay
MRF7S18125BHR3 MRF7S18125BHSR3
4
RF Device Data
Freescale Semiconductor
VDD
VGS
R1
R2
C1 C8
C9
C2
C3
R3
C6
C14
C18
C16
C10
C7
C12
C13
CUT OUT AREA
C15
C17
C11
C4
C5
MRF7S18125BH
Rev. 0
Figure 2. MRF7S18125BHR3(HSR3) Test Circuit Component Layout
MRF7S18125BHR3 MRF7S18125BHSR3
RF Device Data
Freescale Semiconductor
5
Gps, POWER GAIN (dB)
17.5
VDD = 28 Vdc
Pout = 125 W CW, IDQ = 1100 mA
17
58
−7
57
−9
56
Gps
55
16.5
ηD
54
16
15.5
53
ηD, DRAIN EFFICIENCY (%)
18
−11
−13
−15
−17
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
IRL
15
1930
1940
1950
1960
1970
1980
52
1990
−19
f, FREQUENCY (MHz)
Gps
Gps, POWER GAIN (dB)
17
50
ηD
16.5
40
VDD = 28 Vdc, Pout = 57 W Avg.
IDQ = 1100 mA, EDGE Modulation
16
IRL
15.5
30
20
15
10
EVM
14.5
1930
1940
1950
1960
1970
1980
0
1990
−9
−11
−13
−15
−17
−19
IRL, INPUT RETURN LOSS (dB)
60
EVM, ERROR VECTOR
MAGNITUDE (% rms)
17.5
ηD, DRAIN
EFFICIENCY (%)
Figure 3. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 125 Watts CW
−21
f, FREQUENCY (MHz)
Figure 4. Power Gain, Input Return Loss, EVM and Drain
Efficiency versus Frequency @ Pout = 57 Watts Avg.
18
IMD, INTERMODULATION DISTORTION (dBc)
0
IDQ = 1650 mA
1375 mA
Gps, POWER GAIN (dB)
17
1100 mA
16 825 mA
550 mA
15
14
VDD = 28 Vdc
f = 1960 MHz
13
10
100
300
VDD = 28 Vdc, Pout = 125 W (PEP)
IDQ = 1100 mA, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
−10
−20
IM3−U
−30
IM3−L IM5−U
−40
IM5−L
IM7−U
−50
IM7−L
−60
0.1
1
10
100
Pout, OUTPUT POWER (WATTS) CW
TWO−TONE SPACING (MHz)
Figure 5. Power Gain versus Output Power
Figure 6. Intermodulation Distortion Products
versus Two - Tone Spacing
MRF7S18125BHR3 MRF7S18125BHSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
18
P6dB = 52.59 dBm (181.6 W)
Ideal
17
58
P3dB = 52.16 dBm (164.4 W)
57
56
55
54 P1dB = 51.61 dBm
(145 W)
53
Actual
52
51
34
35
36
37
38
40
39
41
42
EVM, ERROR VECTOR MAGNITUDE (% rms)
Gps
16
5
15
35
30
14.5
ηD
25
20
15
300
100
Pin, INPUT POWER (dBm)
Pout, OUTPUT POWER (WATTS) CW
Figure 7. Pulsed CW Output Power versus
Input Power
Figure 8. Power Gain and Drain Efficiency
versus Output Power
4
3
50 W Avg.
2
18 W Avg.
1
1940
1950
1960
1970
1980
1990
−50
Pout = 78 W Avg.
−55
VDD = 28 Vdc
IDQ = 1100 mA
EDGE Modulation
SR @ 400 kHz
−60
50 W Avg.
−65
78 W Avg.
−70
18 W Avg.
SR @ 600 kHz
−75
−80
1930
50 W Avg.
18 W Avg.
1940
1950
1960
1970
1980
1990
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 9. EVM versus Frequency
Figure 10. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
−35
−45
−40
−45
25_C
−50
85_C
−55
TC = −30_C
−60
VDD = 28 Vdc
IDQ = 1100 mA
f = 1960 MHz
EDGE Modulation
−65
−70
−75
SPECTRAL REGROWTH @ 600 kHz (dBc)
SPECTRAL REGROWTH @ 400 kHz (dBc)
VDD = 28 Vdc
IDQ = 1100 mA
f = 1960 MHz
10
43
Pout = 78 W Avg.
0
1930
45
40
13
VDD = 28 Vdc
IDQ = 1100 mA
EDGE Modulation
50
85_C
15.5
13.5
6
55
85_C
SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc)
50
33
60
25_C
25_C
16.5
14
VDD = 28 Vdc, IDQ = 1100 mA, Pulsed CW
12 μsec(on), 1% Duty Cycle, f = 1960 MHz
65
−30_C
TC = −30_C
17.5
Gps, POWER GAIN (dB)
Pout, OUTPUT POWER (dBc)
59
ηD, DRAIN EFFICIENCY (%)
60
−50
25_C
−55
−60
85_C
−65
TC = −30_C
−70
−75
VDD = 28 Vdc, IDQ = 1100 mA
f = 1960 MHz, EDGE Modulation
−80
−85
0
20
40
60
80
100
120
140
160
180 200
Pout, OUTPUT POWER (WATTS)
Figure 11. Spectral Regrowth at 400 kHz
versus Output Power
0
20
40
60
80
100
120
140
160
180
200
Pout, OUTPUT POWER (WATTS)
Figure 12. Spectral Regrowth at 600 kHz
versus Output Power
MRF7S18125BHR3 MRF7S18125BHSR3
RF Device Data
Freescale Semiconductor
7
60
VDD = 28 Vdc, IDQ = 1100 mA
f = 1960 MHz, EDGE Modulation
20
50
TC = 25_C
85_C
16
12
ηD
19
25_C
40
30
−30_C
8
20
−30_C
85_C
4
10
18
Gps, POWER GAIN (dB)
24
ηD, DRAIN EFFICIENCY (%)
EVM, ERROR VECTOR MAGNITUDE (% rms)
TYPICAL CHARACTERISTICS
TC = −30_C
17
25_C
16
85_C
15
VDD = 28 Vdc
Pout = 125 W CW
IDQ = 1100 mA
EVM
0
1
10
0
500
100
14
1930
1940
1950
1960
1970
1980
Pout, OUTPUT POWER (WATTS) AVG.
f, FREQUENCY (MHz)
Figure 13. EVM and Drain Efficiency versus
Output Power
Figure 14. Power Gain versus Frequency
1990
109
MTTF (HOURS)
108
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 125 W CW, and ηD = 55%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 15. MTTF versus Junction Temperature
MRF7S18125BHR3 MRF7S18125BHSR3
8
RF Device Data
Freescale Semiconductor
GSM TEST SIGNAL
−10
−20
Reference Power
VWB = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
−30
−40
(dB)
−50
−60
−70
−80
−90
400 kHz
400 kHz
600 kHz
600 kHz
−100
−110
Center 1.96 GHz
200 kHz
Span 2 MHz
Figure 16. EDGE Spectrum
MRF7S18125BHR3 MRF7S18125BHSR3
RF Device Data
Freescale Semiconductor
9
Zo = 5 Ω
f = 2040 MHz
Zload
f = 1880 MHz
f = 2040 MHz
f = 1880 MHz
Zsource
VDD = 28 Vdc, IDQ = 1100 mA, Pout = 125 W CW
f
MHz
Zsource
W
Zload
W
1880
1.31 - j3.61
1.32 - j3.06
1900
1.25 - j3.06
1.30 - j2.92
1920
1.21 - j3.30
1.28 - j2.79
1940
1.17 - j3.17
1.26 - j2.67
1960
1.13 - j3.06
1.23 - j2.55
1980
1.10 - j2.92
1.20 - j2.42
2000
1.06 - j2.83
1.18 - j2.30
2020
0.99 - j2.75
1.16 - j2.18
2040
0.91 - j2.66
1.12 - j2.07
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 17. Series Equivalent Source and Load Impedance
MRF7S18125BHR3 MRF7S18125BHSR3
10
RF Device Data
Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
Pout, OUTPUT POWER (dBm)
61
60
59
Ideal
P6dB = 54.29 dBm (268.5 W)
P3dB = 53.76 dBm (237.7 W)
58
57
56
55
P1dB = 52.89 dBm
(194.5 W)
Actual
54
53
52
51
VDD = 28 Vdc, IDQ = 1100 mA, Pulsed CW
10 μsec(on), 10% Duty Cycle, f =1960 MHz
50
49
32
33
34
35
36
37
38
39
40
41
42
43
44
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
Test Impedances per Compression Level
P1dB
Zsource
Ω
Zload
Ω
0.65 - j4.06
0.73 - j2.62
Figure 18. Pulsed CW Output Power
versus Input Power @ 28 V
MRF7S18125BHR3 MRF7S18125BHSR3
RF Device Data
Freescale Semiconductor
11
PACKAGE DIMENSIONS
B
G
Q
bbb
2X
1
M
T A
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3
B
K
2
(FLANGE)
D
bbb
T A
M
B
M
M
M
R
(INSULATOR)
bbb
N
M
T A
B
M
M
ccc
M
T A
M
M
aaa
M
T A
M
ccc
H
B
S
(LID)
M
T A
B
M
(LID)
M
(INSULATOR)
B
M
C
F
E
A
T
A
SEATING
PLANE
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465 - 06
ISSUE G
NI - 780
MRF7S18125BHR3
(FLANGE)
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
4X U
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4X Z
(LID)
B
1
2X
2
B
(FLANGE)
K
D
bbb
M
T A
B
M
N
M
(LID)
ccc
M
R
M
T A
M
B
M
ccc
M
T A
S
(INSULATOR)
bbb
M
T A
M
M
B
M
aaa
M
T A
M
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
F
T
SEATING
PLANE
(FLANGE)
CASE 465A - 06
ISSUE H
NI - 780S
MRF7S18125BHSR3
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−−
0.040
−−−
0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MRF7S18125BHR3 MRF7S18125BHSR3
12
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Nov. 2008
Description
• Initial Release of Data Sheet
MRF7S18125BHR3 MRF7S18125BHSR3
RF Device Data
Freescale Semiconductor
13
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MRF7S18125BHR3 MRF7S18125BHSR3
Document Number: MRF7S18125BH
Rev. 0, 11/2008
14
RF Device Data
Freescale Semiconductor