¡ Semiconductor MSC23B236A-xxBS8/DS8 ¡ Semiconductor MSC23B236A-xxBS8/DS8 2,097,152-Word ¥ 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The Oki MSC23B236A-xxBS8/DS8 is a fully decoded 2,097,152-word ¥ 36-bit CMOS dynamic random access memory composed of four 16-Mb (1M ¥ 16) DRAMs in SOJ and four 2-Mb (1M ¥ 2) DRAMs in SOJ. The mounting of eight DRAMs together with decoupling capacitors on a 72pin glass epoxy SIMM Package supports any application where high density and large capacity of storage memory are required. FEATURES • 2,097,152-word ¥ 36-bit (Parity) organization • 72-pin SIMM MSC23B236A-xxBS8 : Gold tab MSC23B236A-xxDS8 : Solder tab • Single 5 V supply ±10% tolerance • Input : TTL compatible • Output : TTL compatible, 3-state, nonlatch • Refresh : 1024 cycles/16 ms • CAS before RAS refresh, CAS before RAS hidden refresh, RAS-only refresh capability • Fast Page Mode capability PRODUCT FAMILY Family Access Time (Max.) Power Dissipation Cycle Time Operating (Max.) Standby (Max.) (Min.) tRAC tAA tCAC MSC23B236A-60BS8/DS8 60 ns 30 ns 15 ns 110 ns 3410 mW MSC23B236A-70BS8/DS8 70 ns 35 ns 20 ns 130 ns 3080 mW 44 mW 159 MSC23B236A-xxBS8/DS8 ¡ Semiconductor PIN CONFIGURATION (Unit : mm) MSC23B236A-xxBS8/DS8 *1 107.95 ±0.2 101.19 Typ. 3.38 ±0.13 9.3 Max. f 3.18 25.4 ±0.13 10.16 6.35 ±0.13 ±0.13 72 1 2.03 ±0.13 5.7 Min. R1.57 6.35 1.27 ±0.1 6.35 Typ. +0.1 1.27 –0.08 1.04 Typ. 95.25 *1 The common size difference of the board width 12.5 mm of its height is specified as ±0.2. The value above 12.5 mm is specified as ±0.5. Pin No. Pin Name Pin No. Pin Name Pin No. Pin Name Pin No. Pin Name Pin No. Pin Name 1 VSS 16 A4 31 A8 46 NC 61 DQ14 2 DQ0 17 A5 32 A9 47 WE 62 DQ33 3 DQ18 18 A6 33 RAS3 48 NC 63 DQ15 4 DQ1 19 NC 34 RAS2 49 DQ9 64 DQ34 5 DQ19 20 DQ4 35 DQ26 50 DQ27 65 DQ16 6 DQ2 21 DQ22 36 DQ8 51 DQ10 66 NC 7 DQ20 22 DQ5 37 DQ17 52 DQ28 67 PD1 8 DQ3 23 DQ23 38 DQ35 53 DQ11 68 PD2 9 DQ21 24 DQ6 39 VSS 54 DQ29 69 PD3 10 VCC 25 DQ24 40 CAS0 55 DQ12 70 PD4 11 NC 26 DQ7 41 CAS2 56 DQ30 71 NC 12 A0 27 DQ25 42 CAS3 57 DQ13 72 VSS 13 A1 28 A7 43 CAS1 58 DQ31 14 A2 29 NC 44 RAS0 59 VCC 15 A3 30 VCC 45 RAS1 60 DQ32 Presence Detect Pins 160 Pin No. Pin Name MSC23B236A -60BS8/DS8 MSC23B236A -70BS8/DS8 67 PD1 NC NC 68 PD2 NC NC 69 PD3 NC VSS 70 PD4 NC NC ¡ Semiconductor MSC23B236A-xxBS8/DS8 BLOCK DIAGRAM A0 - A9 CAS0 CAS1 WE A0 - A9 RAS RAS0 LCAS UCAS WE OE VSS A0 - A9 RAS CAS1 CAS2 WE OE VSS A0 - A9 RAS RAS2 LCAS UCAS WE OE VSS A0 - A9 RAS CAS1 CAS2 WE OE VSS CAS2 CAS3 VCC VSS C1 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ16 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ16 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ16 VCC DQ1 DQ2 DQ8 DQ17 VCC VCC DQ1 DQ2 VCC DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQ24 DQ25 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ16 DQ27 DQ28 DQ29 DQ30 DQ31 DQ32 DQ33 DQ34 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ16 VCC DQ1 DQ2 DQ26 DQ35 VCC VCC DQ1 DQ2 VCC A0 - A9 RAS RAS1 LCAS UCAS WE OE VSS A0 - A9 RAS CAS1 CAS2 WE OE VSS A0 - A9 RAS RAS3 LCAS UCAS WE OE VSS A0 - A9 RAS CAS1 CAS2 WE OE VSS C8 161 MSC23B236A-xxBS8/DS8 ¡ Semiconductor ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Parameter Symbol Rating Unit Voltage on Any Pin Relative to VSS VIN, VOUT –1.0 to 7.0 V Voltage VCC Supply Relative to VSS VCC –1.0 to 7.0 V Short Circuit Output Current IOS 50 mA Power Dissipation PD 9.2 W Operating Temperature Topr 0 to 70 °C Storage Temperature Tstg –40 to 125 °C Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Recommended Operating Conditions (Ta = 0°C to 70°C) Symbol Min. Typ. Max. Unit VCC 4.5 5.0 5.5 V VSS 0 0 0 V Input High Voltage VIH 2.4 — 6.5 V Input Low Voltage VIL –1.0 — 0.8 V Parameter Power Supply Voltage Capacitance (Ta = 25°C, f = 1 MHz) Symbol Typ. Max. Unit Input Capacitance (A0 - A9) CIN1 — 53 pF Input Capacitance (WE) CIN2 — 65 pF Input Capacitance (RAS0 - RAS3) CIN3 — 20 pF Input Capacitance (CAS0 - CAS3) CIN4 — 35 pF I/O Capacitance (DQ0 - DQ35) CDQ — 20 pF Parameter Note : Capacitance measured with Boonton Meter. 162 ¡ Semiconductor MSC23B236A-xxBS8/DS8 DC Characteristics Parameter (VCC = 5 V ±10%, Ta = 0°C to 70°C) Symbol Condition MSC23B236A MSC23B236A -60BS8/DS8 -70BS8/DS8 Unit Note Min. Max. Min. Max. –80 80 –80 80 µA –20 20 –20 20 µA 0 V £ VI £ 6.5 V; Input Leakage Current ILI All other pins not under test = 0 V DOUT disable Output Leakage Current ILO Output High Voltage VOH IOH = –5.0 mA 2.4 VCC 2.4 VCC V Output Low Voltage VOL IOL = 4.2 mA 0 0.4 0 0.4 V — 620 — 560 mA 1, 2 — 16 — 16 mA 1 — 8 — 8 mA 1 — 620 — 560 mA 1, 2 — 620 — 560 mA 1, 2 — 480 — 450 mA 1, 3 Average Power Supply Current ICC1 (Operating) Power Supply Current (Standby) ICC3 CAS = VIH, tRC = Min. RAS cycling, ICC6 (CAS before RAS Refresh) CAS before RAS, tRC = Min. RAS = VIL, Average Power (Fast Page Mode) RAS, CAS RAS cycling, Average Power Supply Current tRC = Min. ≥ VCC –0.2 V (RAS-only Refresh) Supply Current RAS, CAS cycling, RAS, CAS = VIH ICC2 Average Power Supply Current 0 V £ VO £ 5.5 V ICC7 CAS cycling, tPC = Min. Notes: 1. ICC Max. is specified as ICC for output open condition. 2. Address can be changed once or less while RAS=VIL. 3. Address can be changed once or less while CAS=VIH. 163 MSC23B236A-xxBS8/DS8 ¡ Semiconductor AC Characteristics (1/2) Parameter (VCC = 5 V ±10%, Ta = 0°C to 70°C) Symbol MSC23B236A MSC23B236A -60BS8/DS8 -70BS8/DS8 Note 1,2,3 Unit Note Min. Max. Min. Max. tRC 110 — 130 — ns Fast Page Mode Cycle Time tPC 40 — 45 — ns Access Time from RAS tRAC — 60 — 70 Access Time from CAS tCAC — 15 — 20 ns 4, 5, 6 ns 4, 5 Access Time from Column Address tAA — 30 — 35 ns 4, 6 Access Time from CAS Precharge tCPA — 35 — 40 ns 4 Output Low Impedance Time from CAS tCLZ 0 — 0 — ns 4 Output Buffer Turn-off Delay Time tOFF 0 15 0 20 ns 7 3 Random Read or Write Cycle Time Transition Time tT 3 50 3 50 ns Refresh Period tREF — 16 — 16 ms RAS Precharge Time tRP 40 — 50 — ns RAS Pulse Width tRAS 60 10k 70 10k ns RAS Pulse Width (Fast Page Mode) tRASP 60 100k 70 100k ns RAS Hold Time tRSH 15 — 20 — ns CAS Precharge Time tCP 10 — 10 — ns CAS Pulse Width tCAS 15 10k 20 10k ns CAS Hold Time tCSH 60 — 70 — ns CAS to RAS Precharge Time tCRP 5 — 5 — ns RAS Hold Time from CAS Precharge tRHCP 35 — 40 — ns RAS to CAS Delay Time tRCD 20 45 20 50 ns 5 RAS to Column Address Delay Time tRAD 15 30 15 35 ns 6 Row Address Set-up Time tASR 0 — 0 — ns Row Address Hold Time tRAH 10 — 10 — ns Column Address Set-up Time tASC 0 — 0 — ns Column Address Hold Time tCAH 15 — 15 — ns Column Address Hold Time from RAS tAR 50 — 55 — ns Column Address to RAS Lead Time tRAL 30 — 35 — ns 164 ¡ Semiconductor MSC23B236A-xxBS8/DS8 AC Characteristics (2/2) Parameter (VCC = 5 V ±10%, Ta = 0°C to 70°C) Note 1,2,3 Symbol MSC23B236A MSC23B236A -60BS8/DS8 Min. Max. -70BS8/DS8 Min. Max. Unit Note Read Command Set-up Time tRCS 0 — 0 — ns Read Command Hold Time tRCH 0 — 0 — ns 8 Read Command Hold Time referenced to RAS tRRH 0 — 0 — ns 8 Write Command Set-up Time tWCS 0 — 0 — ns Write Command Hold Time tWCH 10 — 15 — ns Write Command Hold Time from RAS tWCR 45 — 55 — ns Write Command Pulse Width tWP 10 — 15 — ns Write Command to RAS Lead Time tRWL 15 — 20 — ns Write Command to CAS Lead Time tCWL 15 — 20 — ns Data-in Set-up Time tDS 0 — 0 — ns Data-in Hold Time tDH 15 — 15 — ns Data-in Hold Time from RAS tDHR 50 — 55 — ns CAS Active Delay Time from RAS Precharge tRPC 5 — 5 — ns RAS to CAS Set-up Time (CAS before RAS) tCSR 5 — 5 — ns RAS to CAS Hold Time (CAS before RAS) tCHR 10 — 15 — ns WE to RAS Precharge Time (CAS before RAS) tWRP 10 — 10 — ns WE Hold Time from RAS (CAS before RAS) tWRH 10 — 10 — ns 165 MSC23B236A-xxBS8/DS8 Notes: ¡ Semiconductor 1. A start-up delay of 200 µs is required after power-up followed by a minimum of eight initialization cycles (RAS-only refresh or CAS before RAS refresh) before proper device operation is achieved. When using the internal refresh counter, a minimum of eight CAS before RAS initialization cycles is required. 2. AC mesurement assume tT = 5 ns. 3. VIH (Min.) and VIL (Max.) are reference levels for measuring input timing signals. Transition times are measured between VIH and VIL. 4. Measured with a load circuit equivalent to 2 TTL loads and 100 pF. 5. Operation within the tRCD (Max.) limit ensures that tRAC (Max.) can be met. tRCD (Max.) is specified as a reference point only. If tRCD is greater than the specified tRCD (Max.) limit, access time is controlled by tCAC. 6. Operation within the tRAD (Max.) limit ensures that tRAC (Max.) can be met. tRAD (Max.) is specified as a reference point only. If tRAD is greater than the specified tRAD (Max.) limit, access time is controlled by tAA. 7. tOFF (Max.) defines the time at which the output achieves an open circuit condition and is not referenced to output voltage levels. 8. tRCH or tRRH must be satisfied for a read cycle. See ADDENDUM B for AC Timing Waveforms 166