in im el Pr MSC23CV23257A-xxBS4 2,097,152-Word ¥ 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The Oki MSC23CV23257A-xxBS4 is a fully decoded 2,097,152-word ¥ 32-bit CMOS dynamic random access memory composed of four 16-Mb DRAMs (2M ¥ 8) in TSOP packages mounted with decoupling capacitors on a 72-pin glass epoxy Small Outline DIMM Package supports any application where high density and large capacity of storage memory are required. FEATURES • 2,097,152-word ¥ 32-bit organization • 72-pin Small Outline DIMM • Single 3.3 V supply ±0.3 V tolerance • Input : LVTTL compatible • Output : LVTTL compatible, 3-state • Refresh : 2048 cycles/32 ms • CAS before RAS refresh, CAS before RAS hidden refresh, RAS-only refresh capability • Multi-bit test mode capability • Fast Page Mode with EDO capability PRODUCT FAMILY Family Access Time (Max.) Power Dissipation Cycle Time Operating (Max.) Standby (Max.) (Min.) tRAC tAA tCAC MSC23CV23257A-60BS4 60 ns 30 ns 15 ns 110 ns 2160 mW MSC23CV23257A-70BS4 70 ns 35 ns 20 ns 130 ns 1872 mW 14.4 mW 315 y ar ¡ Semiconductor MSC23CV23257A-xxBS4 ¡ Semiconductor MSC23CV23257A-xxBS4 ¡ Semiconductor PIN CONFIGURATION MSC23CV23257A-xxBS4 (Unit : mm) 2.4 Max. 25.4 ±0.13 3.18 ±0.13 1 5.5 Min. 71 2.0 ±0.13 2.62 Typ. 44.45 ±0.1 1.00 ±0.1 *1 59.69 ±0.2 R2.0 1.0 ±0.1 17.78 ±0.13 0.25 Max. 1.8 ±0.1 72 2 – φ1.8 2 44.45 ±0.1 3.03 51.66 ±0.1 R2.0 3.25 Typ. 5.00 *1 The common size difference of the board width 19.78 mm of its height is specified as ±0.2. The value above 19.78 mm is specified as ±0.5. 316 0.23 Min. 1.27 ±0.1 ¡ Semiconductor MSC23CV23257A-xxBS4 Pin Configuration Pin No. Pin Name 1 VSS Pin No. Pin Name 16 Pin No. Pin Name A4 31 Pin No. Pin Name A8 46 NC Pin No. Pin Name 61 VCC 2 DQ0 17 A5 32 A9 47 WE 62 DQ29 3 DQ1 18 A6 33 NC 48 NC 63 DQ30 4 DQ2 19 A10 34 RAS2 49 DQ18 64 DQ31 5 DQ3 20 NC 35 DQ15 50 DQ19 65 NC 6 DQ4 21 DQ8 36 NC 51 DQ20 66 PD2 7 DQ5 22 DQ9 37 DQ16 52 DQ21 67 PD3 8 DQ6 23 DQ10 38 DQ17 53 DQ22 68 PD4 9 DQ7 24 DQ11 39 VSS 54 DQ23 69 PD5 10 VCC 25 DQ12 40 CAS0 55 NC 70 PD6 11 PD1 26 DQ13 41 CAS2 56 DQ24 71 PD7 12 A0 27 DQ14 42 CAS3 57 DQ25 72 VSS 13 A1 28 A7 43 CAS1 58 DQ26 14 A2 29 NC 44 RAS0 59 DQ27 15 A3 30 VCC 45 NC 60 DQ28 Presence Detect Pins Pin No. Pin Name MSC23CV23257A -60BS4 MSC23CV23257A -70BS4 11 PD1 VSS VSS 66 PD2 NC NC 67 PD3 VSS VSS 68 PD4 NC NC 69 PD5 NC VSS 70 PD6 NC NC 71 PD7 NC NC 317 MSC23CV23257A-xxBS4 ¡ Semiconductor BLOCK DIAGRAM A0 - A10R DQ DQ RAS DQ DQ CAS DQ WE DQ DQ DQ A0 - A10 RAS0 CAS0 WE VCC VCC VCC VCC VCC 318 C1 C4 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 OE VSS A0 - A10R DQ DQ RAS DQ DQ CAS DQ WE DQ DQ DQ CAS3 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 OE VSS A0 - A10R DQ DQ RAS DQ DQ CAS DQ WE DQ DQ DQ RAS2 CAS2 VSS OE VSS A0 - A10R DQ DQ RAS DQ DQ CAS DQ WE DQ DQ DQ CAS1 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 OE VSS DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 ¡ Semiconductor MSC23CV23257A-xxBS4 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Parameter Symbol Rating Unit Voltage on Any Pin Relative to VSS VIN, VOUT –0.5 to 4.6 V Voltage VCC Supply Relative to VSS VCC –0.5 to 4.6 V Short Circuit Output Current IOS 50 mA Power Dissipation PD 4 W Operating Temperature Topr 0 to 70 °C Storage Temperature Tstg –40 to 125 °C Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Recommended Operating Conditions (Ta = 0°C to 70°C) Symbol Min. Typ. Max. Unit VCC 3.0 3.3 3.6 V VSS 0 0 0 V Input High Voltage VIH 2.0 — VCC + 0.3 V Input Low Voltage VIL –0.3 — 0.8 V Parameter Power Supply Voltage Capacitance (Ta = 25°C, f = 1 MHz) Symbol Typ. Max. Unit Input Capacitance (A0 - A10) CIN1 — 27 pF Input Capacitance (RAS0, RAS2) CIN2 — 20 pF Input Capacitance (CAS0 - CAS3) CIN3 — 13 pF Input Capacitance (WE) CIN4 — 35 pF I/O Capacitance (DQ0 - DQ31) CDQ — 13 pF Parameter Note : Capacitance measured with Boonton Meter. 319 MSC23CV23257A-xxBS4 ¡ Semiconductor DC Characteristics Parameter (VCC = 3.3 V ±0.3 V, Ta = 0°C to 70°C) Symbol MSC23CV23257A MSC23CV23257A -60BS4 -70BS4 Condition Unit Note Min. Max. Min. Max. –40 40 –40 40 µA –10 10 –10 10 µA 0 V £ VI £ VCC + 0.3 V; Input Leakage Current ILI All other pins not under test = 0 V DOUT disable Output Leakage Current ILO Output High Voltage VOH IOH = –2.0 mA 2.4 VCC 2.4 VCC V Output Low Voltage VOL IOL = 2.0 mA 0 0.4 0 0.4 V — 600 — 520 — 8 — 8 mA 1 — 4 — 4 mA 1 — 600 — 520 mA 1, 2 — 600 — 520 mA 1, 2 — 600 — 520 mA 1, 3 Average Power Supply Current ICC1 (Operating) Power Supply Current (Standby) ICC3 CAS = VIH, tRC = Min. RAS cycling, ICC6 (CAS before RAS Refresh) CAS before RAS, tRC = Min. RAS = VIL, Average Power (Fast Page Mode) RAS, CAS ICC7 CAS cycling, tHPC = Min. Notes: 1. ICC Max. is specified as ICC for output open condition. 2. Address can be changed once or less while RAS=VIL. 3. Address can be changed once or less while CAS=VIH. 320 mA 1, 2 RAS cycling, Average Power Supply Current tRC = Min. ≥ VCC –0.2 V (RAS-only Refresh) Supply Current RAS, CAS cycling, RAS, CAS = VIH ICC2 Average Power Supply Current 0 V £ VO £ 3.6 V ¡ Semiconductor MSC23CV23257A-xxBS4 AC Characteristics (1/2) Parameter (VCC = 3.3 V ±0.3 V, Ta = 0°C to 70°C) Symbol Note 1,2,3,10,11 MSC23CV23257A MSC23CV23257A -60BS4 Min. Max. -70BS4 Min. Max. Unit Note Random Read or Write Cycle Time tRC 110 — 130 — ns Fast Page Mode Cycle Time tHPC 25 — 30 — ns Access Time from RAS tRAC — 60 — 70 ns 4, 5, 6 Access Time from CAS tCAC — 15 — 20 ns 4, 5 Access Time from Column Address tAA — 30 — 35 ns 4, 6 Access Time from CAS Precharge tCPA — 35 — 40 ns 4 4 Output Low Impedance Time from CAS tCLZ 0 — 0 — ns Output Hold Time from CAS Low tDOH 5 — 5 — ns CAS to Data Output Buffer Turn-off Delay Time tCEZ 0 15 0 15 ns 7, 8 RAS to Data Output Buffer Turn-off Delay Time tREZ 0 15 0 15 ns 7, 8 WE to Data Output Buffer Turn-off Delay Time tWEZ 0 15 0 15 ns 7 Transition Time tT 3 50 3 50 ns 3 Refresh Period tREF — 32 — 32 ms RAS Precharge Time tRP 40 — 50 — ns RAS Pulse Width tRAS 60 10k 70 10k ns RAS Pulse Width (Fast Page Mode) tRASP 60 100k 70 100k ns RAS Hold Time tRSH 15 — 20 — ns CAS Precharge Time tCP 10 — 10 — ns CAS Pulse Width tCAS 10 10k 10 10k ns RAS Low to CAS High Delay Time tCSH 40 — 45 — ns CAS High to RAS Low Delay Time tCRP 5 — 5 — ns RAS Hold Time from CAS Precharge tRHCP 35 — 40 — ns RAS to CAS Delay Time tRCD 20 45 20 50 ns 5 6 RAS to Column Address Delay Time tRAD 15 30 15 35 ns RAS to Second CAS Delay Time tRSCD 60 — 70 — ns Row Address Set-up Time tASR 0 — 0 — ns Row Address Hold Time tRAH 10 — 10 — ns Column Address Set-up Time tASC 0 — 0 — ns Column Address Hold Time tCAH 15 — 15 — ns Column Address Hold Time from RAS tAR 40 — 45 — ns Column Address to RAS Lead Time tRAL 30 — 35 — ns 321 MSC23CV23257A-xxBS4 ¡ Semiconductor AC Characteristics (2/2) Parameter (VCC = 3.3 V ±0.3 V, Ta = 0°C to 70°C) Symbol Note 1,2,3,10,11 MSC23CV23257A MSC23CV23257A -60BS4 Min. Max. -70BS4 Min. Max. Unit Note Read Command Set-up Time tRCS 0 — 0 — ns Read Command Hold Time tRCH 0 — 0 — ns 9 Read Command Hold Time referenced to RAS tRRH 0 — 0 — ns 9 Write Command Set-up Time tWCS 0 — 0 — ns Write Command Hold Time tWCH 10 — 15 — ns Write Command Hold Time from RAS tWCR 40 — 45 — ns Write Command Pulse Width tWP 10 — 15 — ns Write Command Pulse Width (Output Disable) tWPE 5 — 10 — ns Write Command to RAS Lead Time tRWL 15 — 20 — ns Write Command to CAS Lead Time tCWL 15 — 20 — ns Data-in Set-up Time tDS 0 — 0 — ns Data-in Hold Time tDH 15 — 15 — ns Data-in Hold Time from RAS tDHR 40 — 45 — ns CAS Active Delay Time from RAS Precharge tRPC 5 — 5 — ns RAS to CAS Set-up Time (CAS before RAS) tCSR 5 — 5 — ns RAS to CAS Hold Time (CAS before RAS) tCHR 10 — 15 — ns WE to RAS Precharge Time (CAS before RAS) tWRP 10 — 10 — ns WE Hold Time from RAS (CAS before RAS) tWRH 10 — 10 — ns RAS to WE Set-up Time (Test Mode) tWTS 10 — 10 — ns RAS to WE Hold Time (Test Mode) tWTH 10 — 10 — ns 322 ¡ Semiconductor Notes: MSC23CV23257A-xxBS4 1. A start-up delay of 200 µs is required after power-up, followed by a minimum of eight initialization cycles (RAS-only refresh or CAS before RAS refresh) before proper device operation is achieved. 2. The AC characteristics assume tT = 5 ns. 3. VIH (Min.) and VIL (Max.) are reference levels for measuring input timing signals. Transition times (tT) are measured between VIH and VIL. 4. This parameter is measured with a load circuit equivalent to 2 TTL loads and 100 pF. 5. Operation within the tRCD (Max.) limit ensures that tRAC (Max.) can be met. tRCD (Max.) is specified as a reference point only. If tRCD is greater than the specified tRCD (Max.) limit, access time is controlled by tCAC. 6. Operation within the tRAD (Max.) limit ensures that tRAC (Max.) can be met. tRAD (Max.) is specified as a reference point only. If tRAD is greater than the specified tRAD (Max.) limit, access time is controlled by tAA. 7. tCEZ (Max.), tREZ (Max.) and tWEZ (Max.) define the time at which the output achieves the open circuit condition and are not referenced to output voltage levels. 8. tCEZ and tREZ must be satisfied for open circuit condition. 9. tRCH or tRRH must be satisfied for a read cycle. 10. The test mode is initiated by performing a WE and CAS before RAS refresh cycle. This mode is latched and remains in effect until the exit cycle is generated. The test mode specified in this data sheet is a 2-bit parallel test function. CA9 is not used. In a read cycle, if all internal bits are equal, the DQ pin will indicate a high level. If any internal bits are not equal, the DQ pin will indicate a low level. The test mode is cleared and the memory device returned to its normal operating state by performing a RAS-only refresh cycle or a CAS before RAS refresh cycle. 11. In a test mode read cycle, the value of access time parameters is delayed for 5 ns for the specified value. These parameters should be specified in test mode cycle by adding the above value to the specified value in this data sheet. See ADDENDUM I for AC Timing Waveforms 323 MSC23CV23257A-xxBS4 324 ¡ Semiconductor