MSC81111 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MSC81111 is Designed for Class "C" Amplifier Applicatioons from 0.4 to 1.2 GHz, Supplied in Common Base Package. PACKAGE STYLE HLP-1 MAXIMUM RATINGS IC 600 mA VCB 35 V PDISS 21.8 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +200 C θJC 8 C/W O O O O O 1 = Emitter 2 = Collector 3 = Base O Inches Min 0.790 0.225 0.144 0.115 0.055 0.045 0.115 0.003 0.225 0.220 0.125 0.552 Dim: A B C D E F H J K N Q U Max 0.810 0.235 0.180 0.125 0.065 0.055 0.135 0.006 0.275 0.240 0.135 0.572 Millimeters Min Max 20.07 20.6 5.72 5.97 3.66 4.58 2.93 3.17 1.40 1.65 1.15 1.39 2.93 3.42 0.08 0.15 5.72 6.98 5.59 6.09 3.18 3.42 14.03 14.5 NONE CHARACTERISTICS SYMBOL TEST CONDITIONS BVCER IC = 5.0 mA BVCBO IC = 1.0 mA ICBO VCB = 28 V BVEBO IE = 1.0 mA hFE VCE = 5.0 V COB VCB = 28 V Pout ηC GP O TC = 25 C VCC = 28 V MINIMUM TYPICAL MAXIMUM RBE = 10Ω V 45 V 1.0 3.5 IC = 200 mA 15 f = 1.0 GHz 5.0 50 10 6.6 52 11.2 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. mA V f = 1.0 MHz Pin = 500 mW UNITS 45 120 --- 6.5 pF W % dB REV. A 1/1