Spec. No. : C454J3 Issued Date : 2009.03.11 Revised Date : Page No. : 1/7 CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET MTB44P04J3 BVDSS -40V ID -12A RDSON(MAX) 44mΩ Features • Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package Equivalent Circuit Outline MTB44P04J3 TO-252 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=10A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH *2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature Symbol Limits VDS VGS ID ID IDM IAS EAS EAR -40 ±20 -12 -8 -48 -10 5 2 36 12 -55~+175 Pd Tj, Tstg Unit V A mJ W °C *2. Duty cycle ≤ 1% MTB44P04J3 CYStek Product Specification Spec. No. : C454J3 Issued Date : 2009.03.11 Revised Date : Page No. : 2/7 CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 4.1 80 Unit °C/W °C/W Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS *1 IDSS ID(ON) *1 RDS(ON) *1 Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr Min. Typ. Max. Unit Test Conditions -40 -1.8 -12 - -2.3 11 38 50 -3.2 ±100 -1 -25 44 70 V V S nA μA μA A mΩ mΩ VGS=0, ID=-250μA VDS =VGS, ID=-250μA VDS =-5V, ID=-10A VGS=±20, VDS=0 VDS =-32V, VGS =0 VDS =-30V, VGS =0, Tj=125°C VDS =-5V, VGS =-4.5V VGS =-10V, ID=-10A VGS =-7V, ID=-8A - 11.5 2.5 3.2 7 10 20 12 1223 405 366 5.8 - nC ID=-6A, VDS=-10V, VGS=-4.5V ns VDS=-10V, ID=-1A, VGS=-10V, RG=6Ω pF VGS=0V, VDS=-20V, f=1MHz Ω VGS=15mV, VDS=0, f=1MHz - 15 8 -12 -48 -1.3 - A V ns nC IF=IS, VGS=0V IF=-5A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Ordering Information Device MTB44P04J3 MTB44P04J3 Package TO-252 (RoHS compliant & Halogen-free package) Shipping Marking 2500 pcs / Tape & Reel B44P04 CYStek Product Specification Spec. No. : C454J3 Issued Date : 2009.03.11 Revised Date : Page No. : 3/7 CYStech Electronics Corp. Characteristic Curves On-Resistance Variation with Drain Current and Gate Voltage On-Region Characteristics 50 VGS = - 10.0V 2.5 VGS = - 3.5 V - 8.0V 40 RDS(ON) -Normalized Drain-Source On-Resistance -ID- Drain Current(A) - 7.0V - 6.0V 30 20 - 5.0V - 4.0V 10 - 3.5V 0 2 - 5.0 V - 6.0 V - 8.0 V - 10.0 V 1 0.5 0 4 1 2 3 -VDS- Drain-to-Source Voltage(V) 10 0 5 On-Resistance Variation with Temperature 1.9 40 RDS(ON) - On-Resistance(Ω) 1.3 1.0 0.15 0.1 TA = 125°C 0.05 0.7 0.4 -50 50 ID = - 4.5A VGS = - 10V 1.6 TA = 25°C 0 -25 75 0 25 50 TJ - Junction Temperature (°C) 100 125 2 150 Transfer Characteristics 30 VDS = - 10V 25 TA = -55°C 10 20 25°C 10 125°C 15 5 0 1.5 MTB44P04J3 2.5 3.5 -VGS - Gate-Source Voltage( V ) 4 6 - VGS- Gate-to-Source Voltage(V) 4.5 5.5 10 8 Body Diode Forward Voltage Variation with Source Current and Temperature 100 -Is - Reverse Drain Current(A) RDS(on) - Normalized Drain-Source On-Resistance 20 30 - ID - Drain Current(A) On-Resistance Variation with Gate-to-Source Voltage 0.2 ID = -9 A -ID - Drain Current( A ) - 7.0 V 1.5 VGS = 0V TA = 125°C 1 25°C 0.1 -55°C 0.01 0.001 0 0.2 0.6 0.4 0.8 1.0 -VSD - Body Diode Forward Voltage(V) 1.2 1.4 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C454J3 Issued Date : 2009.03.11 Revised Date : Page No. : 4/7 Characteristic Curves(Cont.) Gate Charge Characteristics Capacitance Characteristics 1500 10 f = 1 MHz VGS = 0 V 1200 8 VDS = - 15V 6 - 20V 4 600 Coss 300 2 Crss 0 0 8 4 Qg - Gate Charge(nC) 0 12 Single Pulse RθJC= 6°C/W TC = 25°C P(pk),Peak Transient Power(W) 40 RDS(ON) Limit 100μs 1ms 10ms 100ms 10 1s 10s DC VGS= -10V Single Pulse RθJC = 6°C/W TC = 25°C 40 30 Single Pulse Maximum Power Dissipation 50 50 1 20 10 - VDS, Drain-Source Voltage(V) 0 16 Maximum Safe Operating Area 80 -ID - Drain Current(A) Ciss 900 Capacitance(pF) - VGS - Gate-to-Source Voltage(V) ID = - 9A 30 20 10 0 0 0 1 10 -VDS - Drain-Source Voltage(V) 0.001 40 50 0.01 0.1 t 1 ,Time (sec) 1 10 100 Effective Transient Thermal Impedance Normalized Thermal Response(Rthjc) 1 Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 0.05 PDM t1 0.02 0.01 t2 1.Duty Cycle,D = t1 t2 2.RθJC = 6°C/W Single Pulse 3.TJ - TC = P* RθJC(t) 4.RθJC (t)=r(t) * RθJC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t 1 , Pulse Width(ms) MTB44P04J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C454J3 Issued Date : 2009.03.11 Revised Date : Page No. : 5/7 Reel Dimension Carrier Tape Dimension MTB44P04J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C454J3 Issued Date : 2009.03.11 Revised Date : Page No. : 6/7 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB44P04J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C454J3 Issued Date : 2009.03.11 Revised Date : Page No. : 7/7 TO-252 Dimension C A Marking: D B Device Name G F L Date code 3 H E K 2 I Style: Pin 1.Gate 2.Drain 3.Source 1 J 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 *: Typical Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2441 0.2677 0.2125 0.2283 DIM A B C D E F Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.20 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0449 0.0346 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 1.14 0.88 5.20 5.50 1.40 1.60 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : KFC; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB44P04J3 CYStek Product Specification