UNISONIC TECHNOLOGIES CO., LTD 2N3772 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS DESCRIPTION The UTC 2N3772 is a silicon power transistor in TO-3 metal case. It is designed for linear amplifiers, series pass regulators, and inductive switching applications. 1 TO-3 ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N3772L-T30-Y 2N3772G-T30-Y www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., LTD Package TO-3 Pin Assignment 1 2 3 B E C Packing Tray 1 of 3 QW-R205-002,Ba 2N3772 SILICON NPN TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25℃, unless otherwise specified ) PARAMETER SYMBOL RATINGS Collector-Base Voltage VCBO 100 Collector-Emitter Voltage VCEO 60 Emitter-Base Voltage VEBO 7 Collector-Emitter Voltage VCEV 80 Collector Current IC 30 Collector Peak Current (Note 1) ICM 30 Base Current IB 5 Base Peak Current (Note 1) IBM 15 Power Dissipation (TA=25℃) PD 150 Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ +150 Note 1. Pulse Test: PW<=300μs, Duty Cycle<=2% 2. Absolute maximum ratings are those values beyond which the device could be permanently Absolute maximum ratings are stress ratings only and functional device operation is not implied. UNIT V V V V A A A A W ℃ ℃ damaged. ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current SYMBOL VCEX(SUS) VCER(SUS) VCEO(SUS) ICEO Collector Cut-off Current ICEX Collector Cut-off Current Emitter Cut-off Current ON CHARACTERISTICS ICBO IEBO DC Current Gain (Note) hFE Collector-Emitter Saturation Voltage VCE(SAT) TEST CONDITIONS IC=0.2A,VBE(OFF)=1.5V,RBE=100Ω IC=0.2A, RBE=100Ω IC=0.2A, IB=0 VCE=50V,IB=0 VCE=100V, VBE(OFF)=1.5V. VCE=30V, VBE(OFF)=1.5V, TA=150℃ VCE=50V, IE=0 VBE=7V, IC=0 80 70 60 IC=10A,VCE=4V IC=20A, VCE=4V IC=10A, IB=1.5A IC=20A, IB=4A IC=10A, VCE=4V 15 5 Base-Emitter On Voltage VBE(ON) SECOND BREAKDOWN Second Breakdown Collector with Base IS/b VCE=60V, T=1.0s, Non-repetitive Forward Biased DYNAMIC CHARACTERISTICS Current Gain-Bandwidth Product fT IC=1A, VCE=4V, f=50kHz Small-Signal Current Gain hFE IC=1A, VCE=4V, f=1kHz Note: Pulse Test: PW<=300μs, Duty Cycle<=2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 10 5 10 5 5 V V V mA mA mA mA 60 1.4 4.0 2.2 V V 2.5 A 0.2 40 MHz 2 of 3 QW-R205-002,Ba 2N3772 SILICON NPN TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R205-002,Ba