UNISONIC TECHNOLOGIES CO., LTD 2N60L Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 2N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) = 5Ω@VGS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness *Pb-free plating product number: 2N60LL SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Package Normal Lead Free Plating 2N60L-x-TA3-T 2N60LL-x-TA3-T TO-220 2N60L-x-TF3-T 2N60LL-x-TF3-T TO-220F 2N60L-x-TM3-T 2N60LL-x-TM3-T TO-251 2N60L-x-TN3-R 2N60LL-x-TN3-R TO-252 2N60L-x-TN3-T 2N60LL-x-TN3-T TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel Tube 1 of 8 QW-R502-182,A 2N60L Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT 600 V Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 1) IAR 2.0 A TC = 25°C 2.0 A Drain Current Continuous ID TC = 100°C 1.26 A Drain Current Pulsed (Note 1) IDP 8.0 A Single Pulsed (Note 2) EAS 140 mJ Avalanche Energy 4.5 mJ Repetitive (Note 1) EAR Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns TO-220 32 W TO-220F 9 W Total Power Dissipation PD TO-251 25 W TO-252 20 W Junction Temperature TJ +150 ℃ Operating Temperature TOPR -55 ~ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2N60L-A 2N60L-B THERMAL DATA PARAMETER Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case PACKAGE TO-251 TO-252 TO-220 TO-220F TO-251 TO-252 TO-220 TO-220F SYMBOL θJA θJc RATINGS 65 58 43 38 5 6 4 12 UNIT ℃/W ELECTRICAL CHARACTERISTICS (TJ =25℃, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL 2N60L-A 2N60L-B Drain-Source Leakage Current Gate-Source Leakage Current BVDSS TEST CONDITIONS VGS = 0V, ID = 250µA MIN TYP MAX UNIT 600 650 IDSS Forward Reverse Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V IGSS VGS = -30V, VDS = 0V ID = 250 µA, Referenced to △BVDSS/△TJ 25°C VGS(TH) RDS(ON) CISS COSS CRSS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw VDS = VGS, ID = 250µA VGS = 10V, ID =1A VDS =25V, VGS =0V, f =1MHz 10 100 -100 0.4 2.0 V V µA nA nA V/℃ 3.8 4.0 5 V Ω 270 40 5 350 50 7 pF pF pF 2 of 8 QW-R502-182,A 2N60L Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS SWITCHING CHARACTERISTICS Turn-On Delay Time tD (ON) Turn-On Rise Time tR VDD =300V, ID =2.4A, RG=25Ω (Note 4, 5) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS=480V, VGS=10V, ID=2.4A Gate-Source Charge QGS (Note 4, 5) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A Continuous Drain-Source Current ISD Pulsed Drain-Source Current ISM Reverse Recovery Time tRR VGS = 0 V, ISD = 2.4A, di/dt = 100 A/µs (Note4) Reverse Recovery Charge QRR Note: 1. Repetitive Rating : Pulse width limited by TJ 2. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 3. ISD ≤ 2.4A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 10 25 20 25 9.0 1.6 4.3 180 0.72 30 60 50 60 11 ns ns ns ns nC nC nC 1.4 2.0 8.0 V A A ns µC 3 of 8 QW-R502-182,A 2N60L Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver Same Type as D.U.T. VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-182,A 2N60L Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 3A Gate Charge Test Circuit Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Fig. 2B Switching Waveforms Fig. 3B Gate Charge Waveform Fig. 4B Unclamped Inductive Switching Waveforms 5 of 8 QW-R502-182,A 2N60L Power MOSFET Capacitance (pF) Gate-Source Voltage, VGS (V) TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-182,A Drain-Source On-Resistance, RDS(ON) (Normalized) Drain-Source Breakdown Voltage, VDSS (Normalized) Drain Current, ID (A) Drain Current, ID (A) 2N60L UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Power MOSFET TYPICAL CHARACTERISTICS(Cont.) QW-R502-182,A 7 of 8 2N60L Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-182,A