ONSEMI NCV7420D23R2G

NCV7420
LIN Transceiver with 3.3V
or 5 V Voltage Regulator
General Description
V BB
1
14
VCC
LIN
2
13
RxD
GND
3
12
TxD
GND
4
WAKE
5
INH
6
OTP_ZAP
7
11
GND
10
STB
9
EN
8
TEST
SOIC 14
D SUFFIX
CASE 751AP
ORDERING INFORMATION
Voltage Regulator
LIN−Bus Transceiver
• LIN compliant to specification revision 2.0 (backward
•
•
•
•
compatible to version 1.3) and J2602
I3T high voltage technology
Bus voltage ±45 V
Transmission rate up to 20 kBaud
SOIC 14 Green package
This is a Pb−Free Device*
Output voltage 5 V / ~50 mA or 3.3 V / ~50 mA
Wake−up input
Enable inputs for stand−by and sleep mode
INH output for auxiliary purposes (switching of an
external pull−up or resistive divider towards battery,
control of an external voltage regulator etc.)
Modes
• Normal mode: LIN communication in either low (up to
Protection
• Thermal shutdown
• Indefinite short−circuit protection on pins LIN and
•
WAKE towards supply and ground
•
• Load dump protection (45 V)
• Bus pins protected against transients in an automotive
•
PIN CONFIGURATION
See detailed ordering and shipping information in the package
dimensions section on page 14 of this data sheet.
KEY FEATURES
•
•
•
•
•
http://onsemi.com
NCV7420
The NCV7420 is a fully featured local interconnect network (LIN)
transceiver designed to interface between a LIN protocol controller
and the physical bus. The transceiver is implemented in I3T
technology enabling both high−voltage analog circuitry and digital
functionality to co−exist on the same chip.
The NCV7420 LIN device is a member of the in−vehicle
networking (IVN) transceiver family of ON Semiconductor that
integrates a LIN v2.0 physical transceiver and either a 3.3 V or a 5 V
voltage regulator. It is designed to work in harsh automotive
environment and is submitted to the TS16949 qualification flow.
The LIN bus is designed to communicate low rate data from control
devices such as door locks, mirrors, car seats, and sunroofs at the
lowest possible cost. The bus is designed to eliminate as much wiring
as possible and is implemented using a single wire in each node. Each
node has a slave MCU−state machine that recognizes and translates
the instructions specific to that function. The main attraction of the
LIN bus is that all the functions are not time critical and usually relate
to passenger comfort.
•
environment
ESD protection level for LIN, INH, WAKE and Vbb up
to ±8 kV
EMI Compatibility
10 kBaud) or normal slope
Sleep mode: VCC is switched “off” and no
communication on LIN bus
Stand−by mode: VCC is switched “on” but there is no
communication on LIN bus
Wake−up bringing the component from sleep mode into
standby mode is possible either by LIN command or
digital input signal on WAKE pin. Wake−up from LIN
bus can also be detected and flagged when the chip is
already in standby mode.
• Integrated slope control
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2009
March, 2009 − Rev. 1
1
Publication Order Number:
NCV7420/D
NCV7420
Table 1. KEY TECHNICAL CHARACTERISTICS − 3.3 V version
Symbol
Parameter
Min.
Typ.
Max.
Unit
5
12
26
V
Vbb
Nominal battery operating voltage
Vbb
Load dump protection (Note 1)
45
V
Ibb_SLP
Supply current in sleep mode
20
mA
Vcc_out
(Note 5)
Regulated Vcc output, Vcc load 1 mA−30 mA
3.23
3.30
3.37
V
Regulated Vcc output, Vcc load 0 mA−50 mA
3.19
3.30
3.41
V
Iout_max
Maximum continuous Vcc output current (Note 2)
30
mA
Maximum Vcc output current, thermal shutdown can occur (Note 2)
50
mA
Operating DC voltage on WAKE pin
0
Vbb
V
Maximum rating voltage on WAKE pin
−45
45
V
V_wake
Junction thermal shutdown temperature
165
195
°C
Tamb
Tj
Operating ambient temperature
−40
+105
°C
Vesd
Electrostatic discharge voltage (LIN, WAKE, VBB) System HBM (Note 3)
−8
+8
kV
Electrostatic discharge voltage (LIN, INH, WAKE, VBB) HBM (Note 4)
−4
+4
kV
Electrostatic discharge voltage (other pins) HBM (Note 4)
−2
+2
kV
Table 2. KEY TECHNICAL CHARACTERISTICS − 5 V version
Symbol
Parameter
Min.
Typ.
Max.
Unit
6
12
26
V
Load dump protection (Note 1)
45
V
Ibb_SLP
Supply current in sleep mode
20
mA
Vcc_out
(Note 5)
Regulated Vcc output, Vcc load 1 mA−30 mA
4.9
5.0
5.1
V
Regulated Vcc output, Vcc load 0 mA−50 mA
4.83
5.0
5.17
V
Iout_max
Maximum continuous Vcc output current (Note 2)
30
mA
Maximum Vcc output current, thermal shutdown can occur (Note 2)
50
mA
Operating DC voltage on WAKE pin
0
Vbb
V
Maximum rating voltage on WAKE pin
−45
45
V
Junction thermal shutdown temperature
165
195
°C
Tamb
Operating ambient temperature
−40
+105
°C
Vesd
Electrostatic discharge voltage (LIN, WAKE, VBB) System HBM (Note 3)
−8
+8
kV
Electrostatic discharge voltage (LIN, INH, WAKE, VBB) HBM (Note 4)
−4
+4
kV
Electrostatic discharge voltage (other pins) HBM (Note 4)
−2
+2
kV
Vbb
Nominal battery operating voltage
Vbb
V_wake
Tj
1. The applied transients shall be in accordance with ISO 7637 part 1, test pulse 5. The device complies with functional class C; class A can
be reached depending on the application and external components.
2. Current limitation is set above 50 mA but thermal shutdown can occur for currents above 30 mA
3. Equivalent to discharging a 150 pF capacitor through a 330 W resistor conform to IEC Standard 1000−4−2. LIN bus filter 220 pF, Vbb blocking
capacitor 100 nF, 3k3/10n R/C network on WAKE.
4. Equivalent to discharging a 100 pF capacitor through a 1.5 kW resistor conform to MIL STD 883 method 3015.7.
5. Vcc voltage must be properly stabilized by external capacitors: capacitor of min. 80 nF with ESR<10 mW in parallel with a capacitor of min.
8 mF, ESR<1W.
http://onsemi.com
2
NCV7420
VBB
VCC
OTP_ZAP
INH
V−reg
Osc
VCC
Band−
gap
STB
State
&
Wake−up
Control
VBB
WAKE
EN
RxD
Thermal
shutdown
COMP
LIN
Filter
VCC
TxD
Slope Control
time−out
VBB
TEST
POR
VCC
NCV7420
GND
Figure 1. Block Diagram
Typical Application
number and capacitance of Slave devices, the pull−up
resistance of all devices (Master & Slave), and the required
time constant of the system, respectively.
Vcc voltage must be properly stabilized by external
capacitors: capacitor of min. 80 nF (ESR < 10 mW) in
parallel with a capacitor of min. 8 mF (ESR < 1 W).
Application Schematic
The EMC immunity of the Master−mode device can be
further enhanced by adding a capacitor between the LIN
output and ground. The optimum value of this capacitor is
determined by the length and capacitance of the LIN bus, the
Master Node
10 uF 100nF
WAKE
10nF
GND
5
WAKE
V CC
V BB
11
1
RxD
12
9
10
7 3 4 11 8
GND
TxD
EN
10 uF 100nF
Micro
controller
LIN
STB
WAKE
GND
GND
5
KL30
LIN−
BUS
KL31
Figure 2. Typical Application Diagram
http://onsemi.com
3
LIN 2
WAKE
V CC
14
NCV7420
LIN 2
V CC
14
13
220pF
1 nF
LIN
11
1
NCV7420
1 kW
INH V BB
10 uF 100nF
VBAT
10nF
10 uF 100nF
VBAT
13
12
9
10
7 3 4 11 8
GND
Slave Node
VCC
RxD
TxD
EN
Micro
controller
STB
GND
NCV7420
Table 3. PIN DESCRIPTION
Pin
Name
Description
1
VBB
Battery supply input
2
LIN
LIN bus output/input
3
GND
Ground
4
GND
Ground
5
WAKE
6
INH
7
OTP_ZAP
8
TEST
9
EN
Enable input, transceiver in normal operation mode when high
10
STB
Standby mode control input
11
GND
Ground
12
TxD
Transmit data input, low in dominant state
13
RxD
Receive data output; low in dominant state; push−pull output
14
Vcc
Supply voltage (output)
High voltage digital input pin to switch the part from sleep− to standby mode
Inhibit output
Supply for programming of trimming bits at factory testing, should be grounded in the application
Digital input for factory testing, should be grounded in the application
Overall Functional Description
with EMC performance due to reduced slew rate of the LIN
output.
The junction temperature is monitored via a thermal
shutdown circuit that switches the LIN transmitter and
voltage regulator off when temperature exceeds the TSD
trigger level.
NCV7420 has four operating states (normal mode, low
slope mode, stand−by mode, and sleep mode) that are
determined by the input signals EN, WAKE, STB, and TxD.
LIN is a serial communication protocol that efficiently
supports the control of mechatronic nodes in distributed
automotive applications. The domain is class−A multiplex
buses with a single master node and a set of slave nodes.
NCV7420 is designed as a master or slave node for the
LIN communication interface with an integrated 3.3 V or
5 V voltage regulator having a current capability up to
50 mA for supplying any external components
(microcontroller).
NCV7420 contains the LIN transmitter, LIN receiver,
voltage regulator, power−on−reset (POR) circuits and
thermal shutdown (TSD). The LIN transmitter is optimised
for the maximum specified transmission speed of 20 kBaud
Operating States
NCV7420 provides four operating states, two modes for
normal operation with communication, one stand-by
without communication and one low power mode with very
low current consumption. See Figure 3.
http://onsemi.com
4
NCV7420
Stand−by mode
−
−
−
−
−
EN goes from 0 to 1 while TxD = 1
EN goes from 1 to 0
while STB = 1
EN goes from 1 to 0 while STB = 1
Local wake−up
or LIN wake−up
Normal mode
(low slope)
EN goes from 1 to 0 while STB = 0
Vcc: “on”
LIN TX: “on”
INH: “high”/”floating”
Term: 30k W
RxD: LIN data
−
−
−
−
−
Normal mode
(normal slope)
Vcc: “on”
LIN TX: “on”
INH: “high”/”floating”
Term: 30k W
RxD: LIN data
EN goes from 1 to 0
while STB = 0
Vcc: “on”
LIN TX: “off”
INH: “floating”
Term: “current
”
source”
RxD: high/low
EN goes from 0 to 1
while TxD = 0
Power up Vbb
−
−
−
−
−
−
−
−
−
−
Sleep mode
Vcc: “off”
LIN TX: “off”
INH: “floating”
Term: “current source”
RxD: =VCC
Figure 3. State Diagram
Table 4. MODE SELECTION
Mode
Vcc
RxD
INH
LIN
30 kW on LIN
Note
Normal − Slope
ON
Low = Dominant State
High = Recessive State
High if STB=High during state
transition; Floating otherwise
Normal
Slope
ON
(Note 6)
Normal − Low
Slope
ON
Low = Dominant State
High = Recessive State
High if STB=High during state
transition; Floating otherwise
Low Slope
ON
(Note 7)
Stand−by
ON
Low after LIN wakeup,
high otherwise
Floating
OFF
OFF
(Note 8)
Sleep
OFF
Clamped to Vcc
Floating
OFF
OFF
6. The normal slope mode is entered when pin EN goes HIGH while TxD is in HIGH state during EN transition.
7. The low slope mode is entered when pin EN goes HIGH while TxD is in LOW state during EN transition. LIN transmitter gets on only after
TxD returns to high after the state transition.
8. The stand−by mode is entered automatically after power−up.
Normal Slope Mode
are longer). This further reduces the EMC emission. As a
consequence the maximum speed on the LIN bus is reduced
up to 10 kBaud. This mode is suited for applications where
the communication speed is not critical. The mode selection
is done by EN=HIGH when TxD pin is LOW. In order not
to transmit immediately a dominant state on the bus (because
TxD=LOW), the LIN transmitter is enabled only after TxD
returns to HIGH. If STB pin is high during the
standby−to−low slope mode transition, INH pin is pulled
high. Otherwise, it stays floating.
In normal slope mode the transceiver can transmit and
receive data via LIN bus with speed up to 20 kBaud. The
transmit data stream of the LIN protocol is present on the
TxD pin and converted by the transmitter into a LIN bus
signal with controlled slew rate to minimize EMC emission.
The receiver consists of the comparator that has a threshold
with hysteresis in respect to the supply voltage and an input
filter to remove bus noise. The LIN output is pulled HIGH
via an internal 30 kW pull-up resistor. For master
applications it is needed to put an external 1 kW resistor with
a serial diode between LIN and Vbb (or INH). See Figure 2.
The mode selection is done by EN=HIGH when TxD pin is
HIGH. If STB pin is high during the standby-to-normal
slope mode transition, INH pin is pulled high. Otherwise, it
stays floating.
Stand−by Mode
The stand−by mode is always entered after power−up of
the NCV7420. It can also be entered from normal mode
when the EN pin is low and the stand−by pin is high. From
sleep mode it can be entered after a local wake−up or LIN
wakeup. In stand−by mode the Vcc voltage regulator for
supplying external components (e.g. a microcontroller)
stays active. Also the LIN receiver stays active to be able to
detect a remote wake−up via bus. The LIN transmitter is
Low Slope Mode
In low slope mode the slew rate of the signal on the LIN
bus is reduced (rising and falling edges of the LIN bus signal
http://onsemi.com
5
NCV7420
Wake−up
disabled and the slave internal termination resistor of 30 kW
between LIN and Vbb is disconnected in order to minimize
current consumption. Only a pull−up current source
between Vbb and LIN is active.
NCV7420 has two possibilities to wake−up from sleep or
stand−by mode (see Figure 3):
• Local wake−up: enables the transition from sleep mode
to stand−by mode
• Remote wake−up via LIN: enables the transition from
sleep− to stand−by mode and can be also detected when
already in standby mode.
A local wake−up is only detected in sleep mode if a
transition from LOW to HIGH or from HIGH to LOW is
seen on the wake pin.
Sleep Mode
The Sleep Mode provides extreme low current
consumption. This mode is entered when both EN and STB
pins are LOW coming from normal mode. The internal
termination resistor of 30 kW between LIN and Vbb is
disconnected and also the Vcc regulator is switched off to
minimize current consumption.
Detection of Local Wake−Up
Wake
Detection of Local Wake−Up
Wake
VBB
VBB
50% VBB typ.
Sleep Mode
Stand−by Mode
50% VBB typ.
t
Sleep Mode
t
Stand−by Mode
Figure 4. Local Wake−up Signal
A remote wake−up is only detected if a combination of (1)
a falling edge at the LIN pin (transition from recessive to
dominant) is followed by (2) a dominant level maintained
for a time period > tWAKE and (3) again a rising edge at pin
LIN (transition from dominant to recessive) happens.
LIN
Detection of Remote Wake−Up
VBB
LIN recessive level
tWAKE
60% Vbb
40% Vbb
LIN dominant level
Stand−by Mode
Sleep Mode
t
Figure 5. Remote Wake−up Behavior
• RxD is kept LOW until normal mode is entered after a
The wake−up source is distinguished by pin RxD in the
stand−by mode:
• RxD remains HIGH after power−up or local wake−up.
remote wake−up (LIN).
http://onsemi.com
6
NCV7420
Electrical Characteristics
Definitions
All voltages are referenced to GND (Pin 13). Positive currents flow into the IC.
Table 5. ABSOLUTE MAXIMUM RATINGS – 3.3 V and 5 V versions
Symbol
Parameter
Min.
Max.
Unit
Vbb
Battery voltage on pin Vbb (Note 9)
−0.3
+45
V
Vcc
DC voltage on pin Vcc
0
+7
V
I_Vcc
Current delivered by the Vcc regulator
50
V_LIN
LIN bus voltage (Note 10)
−45
+45
V
V_INH
DC voltage on inhibit pin
−0.3
Vbb + 0.3
V
V_WAKE
DC voltage on WAKE pin
−45
45
V
V_Dig_in
mA
DC input voltage on pins TxD, RxD, EN, STB
−0.3
Vcc + 0.3
V
Tjunc
Maximum junction temperature
−40
+165
°C
Vesd
Electrostatic discharge voltage (pins LIN, WAKE and Vbb) system HBM (Note 11)
−8
+8
kV
Electrostatic discharge voltage (pins LIN, INH, WAKE and Vbb) HBM (Note 12)
−4
+4
kV
Electrostatic discharge voltage (other pins) HBM (Note 12)
−2.0
+2.0
kV
Electrostatic discharge voltage; charge device model (Note 13)
−250
+250
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
9. The applied transients shall be in accordance with ISO 7637 part 1, test pulses 1, 2, 3a, 3b, and 5. The device complies with functional class
C; class A can be reached depending on the application and external components.
10. The applied transients shall be in accordance with ISO 7637 part 1, test pulses 1, 2, 3a, and 3b. The device complies with functional class
C; class A can be reached depending on the application and external components.
11. Equivalent to discharging a 150 pF capacitor through a 330 W resistor conform to IEC Standard 1000−4−2. LIN bus filter 220 pF, Vbb blocking
capacitor 100 nF, 3k3/10n R/C network on WAKE.
12. Equivalent to discharging a 100 pF capacitor through a 1.5 kW resistor conform to MIL STD 883 method 3015.7.
13. Conform to EOS/ESD−DS5.3 (socket mode).
http://onsemi.com
7
NCV7420
DC Characteristics – 3.3 V version (VBB = 5 V to 26 V; Tjunc = −40°C to +150°C; unless otherwise specified.)
Table 6. DC CHARACTERISTICS SUPPLY − Pins VBB and VCC
Symbol
Max.
Unit
Ibb_ON
Supply current
Normal mode;
LIN recessive
1
mA
Ibb_STB
Supply current
Stand−by mode,
Vbb = 5 – 18 V
60
mA
Ibb_SLP
Supply current
Sleep mode,
Vbb = 5 – 18 V
20
mA
Vcc_out
Regulator output voltage
Vcc load 1 mA − 30 mA
3.23
3.30
3.37
V
Regulator output voltage
Vcc load 0 mA − 50 mA
3.19
3.30
3.41
V
Iout_max_cont
Maximum output current
Vbb = 16 V;
Tamb = 105°C
30
mA
Iout_max_conta
Maximum output current
Vbb = 26 V;
limited lifetime
30
mA
Thermal shutdown
can occur
50
mA
150
mA
Max.
Unit
Iout_max_abs
Iout_lim
Parameter
Conditions
Absolute maximum output current
Over−current limitation
Min.
Typ.
50
Table 7. DC CHARACTERISTICS LIN TRANSMITTER − Pin LIN
Symbol
Parameter
Conditions
Min.
Typ.
VLin_dom_LoSup
LIN dominant output voltage
TXD = low;
Vbb = 7.3 V
1.2
V
VLin_dom_HiSup
LIN dominant output voltage
TXD = low;
Vbb = 18 V
2.0
V
VLin_rec
LIN recessive output voltage
TXD = highH;
Ilin = 0 mA
Vbb − Vγ
(Note 14)
ILIN_lim
Short circuit current limitation
VLin = Vbb_max
40
Rslave
Internal pull−up resistance
20
ILIN_off_dom
LIN output current bus in dominant state
Driver off; Vbb = 12 V
ILIN_off_rec
LIN output current bus in recessive state
Driver off; Vbb = 12 V
ILIN_no_GND
Communication not affected
Vbb = GND = 12 V;
0 < VLin < 18 V
ILIN_no_Vbb
LIN bus remains operational
Vbb = GND = 0 V;
0 < VLin < 18 V
V
200
33
47
−1
mA
kW
mA
−1
20
mA
1
mA
100
mA
Max.
Unit
Table 8. DC CHARACTERISTICS LIN RECEIVER − Pin LIN
Symbol
Parameter
Conditions
Min.
Typ.
Vrec_dom
Receiver threshold
LIN bus recessive →
dominant
0.4
0.6
Vbb
Vrec_rec
Receiver threshold
LIN bus dominant →
recessive
0.4
0.6
Vbb
Vrec_cnt
Receiver centre voltage
(Vbus_dom + Vbus_rec)
/2
0.475
0.525
Vbb
Vrec_hys
Receiver hysteresis
0.05
0.175
Vbb
Max.
Unit
0.65
Vbb
Table 9. DC CHARACTERISTICS I/Os
Symbol
Parameter
Conditions
Min.
Typ.
Pin WAKE
V_wake_th
Threshold voltage
0.35
14. Vγ is the forward diode voltage. Typically (over the complete temperature) Vγ = 1 V.
15. By one of the trimming bits, following reconfiguration can be done during chip−level testing in order to fit the NCV7420_3 into different
interface: pins TxD and EN will have typ. 10 kW pull−down resistor to ground and pin WAKE will have typ. 10 mA pull−up current source.
http://onsemi.com
8
NCV7420
DC Characteristics – 3.3 V version (VBB = 5 V to 26 V; Tjunc = −40°C to +150°C; unless otherwise specified.)
Table 9. DC CHARACTERISTICS I/Os
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Vwake = 0 V;
Vbb = 18 V
−1
−0.5
1
mA
Sleep mode; rising
and falling edge
8
54
ms
0.8
V
Pin WAKE
I_leak
T_wake_min
Input leakage current (Note 15)
Debounce time
Pins TxD and STB
Vil
Low level input voltage
Vih
High level input voltage
2.0
Rpu
Pull−up resistance to Vcc (Note 15)
50
V
200
kW
0.75
V
1
mA
0.8
V
Pin INH
Delta_VH
I_leak
High level voltage drop
IINH = 15 mA
Leakage current
Sleep mode; VINH = 0 V
0.35
−1
Pin EN
Vil
Low level input voltage
Vih
High level input voltage
2.0
Rpd
Pull−down resistance to ground (Note 15)
50
V
200
kW
0.65
V
Pin RxD
Vol
Low level output voltage
Isink = 2 mA
Voh
High level output voltage
Isource = −2 mA
Vcc −
0.65 V
Conditions
Min.
V
Table 10. DC CHARACTERISTICS
Symbol
Parameter
Typ.
Max.
Unit
4.75
V
POR
PORH_Vbb
POR high level Vbb comparator
PORL_Vbb
POR low level Vbb comparator
POR_Vbb_sl
3
V
Maximum slope on Vbb to guarantee POR
50
V/ms
PORH_Vcc
POR high level Vcc comparator
3
V
PORL_Vcc
POR low level Vcc comparator
POR_Vcc_hyst
Hysteresis of POR level Vcc comparator
2
V
100
mV
TSD
Tj
Tj_hyst
Junction temperature
For shutdown
Thermal shutdown hysteresis
165
195
°C
9
18
°C
14. Vγ is the forward diode voltage. Typically (over the complete temperature) Vγ = 1 V.
15. By one of the trimming bits, following reconfiguration can be done during chip−level testing in order to fit the NCV7420_3 into different
interface: pins TxD and EN will have typ. 10 kW pull−down resistor to ground and pin WAKE will have typ. 10 mA pull−up current source.
http://onsemi.com
9
NCV7420
DC Characteristics – 5 V version − (VBB = 6 V to 26 V; Tjunc = −40°C to +150°C; unless otherwise specified.)
Table 11. DC CHARACTERISTICS SUPPLY − Pins VBB and VCC
Symbol
Parameter
Conditions
Max.
Unit
Ibb_ON
Supply current
Normal mode;
LIN recessive
Min.
Typ.
1
mA
Ibb_STB
Supply current
Stand−by mode,
Vbb = 6 – 18 V
60
mA
Ibb_SLP
Supply current
Sleep mode,
Vbb = 6 – 18 V
20
mA
Vcc_out
Regulator output voltage
Vcc load 1 mA − 30 mA
4.9
5.0
5.1
V
Regulator output voltage
Vcc load 0 mA − 50 mA
4.83
5.0
5.17
V
Iout_max_cont
Maximum output current
Vbb = 16 V;
Tamb = 105°C
30
mA
Iout_max_conta
Maximum output current
Vbb = 26 V;
limited lifetime
30
mA
Iout_max_abs
Absolute maximum output current
Thermal shutdown can
occur
50
mA
Iout_lim
Over−current limitation
150
mA
Max.
Unit
50
Table 12. DC CHARACTERISTICS LIN TRANSMITTER − Pin LIN
Symbol
Parameter
Conditions
Min.
VLin_dom_LoSup
LIN dominant output voltage
TXD = low; Vbb = 7.3 V
1.2
V
VLin_dom_HiSup
LIN dominant output voltage
TXD = low; Vbb = 18 V
2.0
V
VLin_rec
LIN recessive output voltage
TXD = highH;
Ilin = 0 mA
Vbb − Vγ
(Note 16)
ILIN_lim
Short circuit current limitation
VLin = Vbb_max
40
Rslave
Internal pull−up resistance
20
ILIN_off_dom
LIN output current bus in dominant state
Driver off; Vbb = 12 V
ILIN_off_rec
LIN output current bus in recessive state
Driver off; Vbb = 12 V
ILIN_no_GND
Communication not affected
Vbb = GND = 12 V;
0 < VLin < 18 V
ILIN_no_Vbb
LIN bus remains operational
Vbb = GND = 0 V;
0 < VLin < 18 V
Typ.
V
33
200
mA
47
kW
−1
mA
−1
20
mA
1
mA
100
mA
Max.
Unit
Table 13. DC CHARACTERISTICS LIN RECEIVER − Pin LIN
Symbol
Parameter
Conditions
Min.
Typ.
Vrec_dom
Receiver threshold
LIN bus recessive →
dominant
0.4
0.6
Vbb
Vrec_rec
Receiver threshold
LIN bus dominant →
recessive
0.4
0.6
Vbb
Vrec_cnt
Receiver center voltage
(Vbus_dom + Vbus_rec)
/2
0.475
0.525
Vbb
Vrec_hys
Receiver hysteresis
0.05
0.175
Vbb
Max.
Unit
0.65
Vbb
Table 14. DC CHARACTERISTICS I/OS
Symbol
Parameter
Conditions
Min.
Typ.
Pin WAKE
V_wake_th
Threshold voltage
0.35
16. Vγ is the forward diode voltage. Typically (over the complete temperature) Vγ = 1 V.
17. By one of the trimming bits, following reconfiguration can be done during chip−level testing in order to fit the NCV7420_5 into different
interface: pins TxD and EN will have typ. 10 kW pull−down resistor to ground and pin WAKE will have typ. 10 mA pull−up current source.
http://onsemi.com
10
NCV7420
DC Characteristics – 5 V version − (VBB = 6 V to 26 V; Tjunc = −40°C to +150°C; unless otherwise specified.)
Table 14. DC CHARACTERISTICS I/OS
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Vwake = 0 V;
Vbb = 18 V
−1
−0.5
1
mA
Sleep mode; rising and
falling edge
8
54
ms
0.8
V
Pin WAKE
I_leak
T_wake_min
Input leakage current (Note 17)
Debounce time
Pins TxD and STB
Vil
Low level input voltage
Vih
High level input voltage
2.0
Rpu
Pull−up resistance to Vcc (Note 17)
50
V
200
kW
0.75
V
1
mA
0.8
V
Pin INH
Delta_VH
I_leak
High level voltage drop
IINH = 15 mA
Leakage current
Sleep mode; VINH = 0 V
0.35
−1
Pin EN
Vil
Low level input voltage
Vih
High level input voltage
2.0
Rpd
Pull−down resistance to ground (Note 17)
50
V
200
kW
0.65
V
Pin RxD
Vol
Low level output voltage
Isink = 2 mA
Voh
High level output voltage
Isource = −2 mA
Vcc −
0.65 V
Conditions
Min.
V
Table 15. DC CHARACTERISTICS
Symbol
Parameter
Typ.
Max.
Unit
4.75
V
POR
PORH_Vbb
POR high level Vbb comparator
PORL_Vbb
POR low level Vbb comparator
POR_Vbb_sl
3
V
Maximum slope on Vbb to guarantee POR
50
V/ms
PORH_Vcc
POR high level Vcc comparator
4.5
V
PORL_Vcc
POR low level Vcc comparator
POR_Vcc_hyst
Hysteresis of POR level Vcc comparator
3
V
100
mV
TSD
Tj
Tj_hyst
Junction temperature
For shutdown
Thermal shutdown hysteresis
165
195
°C
9
18
°C
16. Vγ is the forward diode voltage. Typically (over the complete temperature) Vγ = 1 V.
17. By one of the trimming bits, following reconfiguration can be done during chip−level testing in order to fit the NCV7420_5 into different
interface: pins TxD and EN will have typ. 10 kW pull−down resistor to ground and pin WAKE will have typ. 10 mA pull−up current source.
http://onsemi.com
11
NCV7420
AC Characteristics – 3.3 V and 5 V versions − (VBB = 7 V to 18 V; Tjunc = −40°C to +150°C; unless otherwise specified.)
Table 16. AC CHARACTERISTICS LIN TRANSMITTER − Pin LIN
Symbol
Conditions
Min.
D1
Duty Cycle 1 = tBUS_REC(min) / (2 x TBit)
Parameter
THREC(min) = 0.284 x Vbb
THDOM(min) = 0.422 x Vbb
TBIT = 50 ms
0.396
Typ.
Max.
D2
Duty Cycle 2 = tBUS_REC(max) / (2 x TBit)
THREC(max) = 0.744 x Vbb
THDOM(max) = 0.581 x Vbb
TBIT = 50 ms
0.581
Unit
T_fall_norm
LIN falling edge
Normal slope mode;
Vbb = 12 V; L1, L2
(Note 18)
22.5
ms
T_rise_norm
LIN rising edge
Normal slope mode;
Vbb = 12 V; L1, L2
(Note 18)
22.5
ms
T_sym_norm
LIN slope symmetry
Normal slope mode;
Vbb = 12 V; L1, L2
(Note 18)
4
ms
T_fall_norm
LIN falling edge
Normal slope mode;
Vbb = 12 V; L3 (Note 18)
27
ms
T_rise_norm
LIN rising edge
Normal slope mode;
Vbb = 12 V; L3 (Note 18)
27
ms
T_sym_norm
LIN slope symmetry
Normal slope mode;
Vbb = 12 V; L3 (Note 18)
5
ms
−4
−5
T_fall_low
LIN falling edge
Low slope mode (Note 19);
Vbb = 12 V; L3 (Note 18)
62
ms
T_rise_low
LIN rising edge
Low slope mode (Note 19);
Vbb = 12 V; L3 (Note 18)
62
ms
30
150
ms
6
20
ms
T_wake
Dominant time−out for wake−up via LIN bus
T_dom
TxD dominant time−out
TxD = low
18. The AC parameters are specified for following RC loads on the LIN bus: L1 = 1 kW / 1 nF; L2 = 660 W / 6.8 nF; L3 = 500 W / 10 nF.
19. Low slope mode is not compliant to the LIN 1.3 or LIN 2.0 standard.
http://onsemi.com
12
NCV7420
TxD
tBIT
tBIT
50%
t
tBUS_dom(max)
LIN
tBUS_rec(min)
THRec(max)
THDom(max)
Thresholds of
receiving node 1
THRec(min)
THDom(min)
Thresholds of
receiving node 2
t
tBUS_dom(min)
tBUS_rec(max)
Figure 6. LIN Transmitter Duty Cycle
LIN
100%
60%
60%
40%
40%
0%
T_fall
t
T_rise
Figure 7. LIN Transmitter Rising and Falling Times
Table 17. AC CHARACTERISTICS LIN RECEIVER
Symbol
Pin LIN
Parameter
Conditions
Trec_prop_down
Propagation delay of receiver falling edge
Trec_prop_up
Propagation delay of receiver rising edge
Trec_sym
Propagation delay symmetry
Trec_prop_down −
Trec_prop_up
http://onsemi.com
13
Min.
Typ.
Max.
Unit
0.1
6
ms
0.1
6
ms
−2
2
ms
NCV7420
LIN
Vbb
60% Vbb
40% Vbb
t
RxD
trec_prop_down
trec_prop_up
50%
t
Figure 8. LIN Receiver Timing
ORDERING INFORMATION
Container
Description
Package
Shipping†
Qty.
Temperature
Range
NCV7420D23G
LIN Transceiver + 3.3 V Vreg.
SOIC 150 14 GREEN
(JEDEC MS−012)
Tube/Rail
55
−40°C to 105°C
NCV7420D23R2G
LIN Transceiver + 3.3 V Vreg.
SOIC 150 14 GREEN
(JEDEC MS−012)
Tape & Reel
3000
−40°C to 105°C
NCV7420D25G
LIN Transceiver + 5 V Vreg.
SOIC 150 14 GREEN
(JEDEC MS−012)
Tube/Rail
55
−40°C to 105°C
NCV7420D25R2G
LIN Transceiver + 5 V Vreg.
SOIC 150 14 GREEN
(JEDEC MS−012)
Tape & Reel
3000
−40°C to 105°C
Part Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
14
NCV7420
PACKAGE DIMENSIONS
SOIC 14
CASE 751AP−01
ISSUE A
http://onsemi.com
15
NCV7420
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
16
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NCV7420/D