NDF05N50Z, NDP05N50Z, NDD05N50Z N-Channel Power MOSFET 500 V, 1.25 W Features • • • • http://onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant VDSS RDS(on) (TYP) @ 2.2 A 500 V 1.25 W ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Symbol NDF VDSS NDP NDD 500 Unit Continuous Drain Current RqJC ID 5 (Note 1) 5 4.7 A Continuous Drain Current RqJC, TA = 100°C ID 3.2 (Note 1) 3.2 3 A Pulsed Drain Current, VGS @ 10 V IDM 20 (Note 1) 20 19 A Power Dissipation RqJC PD 28 96 83 W Gate−to−Source Voltage VGS ±30 V Single Pulse Avalanche Energy, ID = 5.0 A EAS 130 mJ ESD (HBM) (JESD22−A114) Vesd 3000 V RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 15) VISO Peak Diode Recovery dv/dt 4.5 (Note 2) V/ns Continuous Source Current (Body Diode) IS 5 A Maximum Temperature for Soldering Leads, 0.063″ (1.6 mm) from Case for 10 s Package Body for 10 s TL TPKG 300 260 °C Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 °C December, 2009 − Rev. 0 D (2) G (1) 4500 S (3) V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Limited by maximum junction temperature 2. IS = 4.4 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C © Semiconductor Components Industries, LLC, 2009 N−Channel V 1 4 4 1 2 1 1 3 2 2 3 3 3 DPAK TO−220FP TO−220AB IPAK CASE 221D CASE 221A CASE 369D CASE 369AA STYLE 2 STYLE 1 STYLE 5 STYLE 2 1 2 MARKING AND ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Publication Order Number: NDF05N50Z/D NDF05N50Z, NDP05N50Z, NDD05N50Z THERMAL RESISTANCE Parameter Junction−to−Case (Drain) Junction−to−Ambient Steady State Symbol Value Unit NDP05N50Z NDF05N50Z NDD05N50Z RqJC 1.3 4.4 1.5 °C/W (Note 3) NDP05N50Z (Note 3) NDF05N50Z (Note 4) NDD05N50Z (Note 3) NDD05N50Z−1 RqJA 50 50 38 80 3. Insertion mounted 4. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces). ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Test Conditions Min BVDSS VGS = 0 V, ID = 1 mA 500 DBVDSS/ DTJ Reference to 25°C, ID = 1 mA Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain−to−Source Leakage Current Gate−to−Source Forward Leakage IDSS VDS = 500 V, VGS = 0 V IGSS VGS = ±20 V Static Drain−to−Source On−Resistance RDS(on) VGS = 10 V, ID = 2.2 A Gate Threshold Voltage VGS(th) VDS = VGS, ID = 50 mA gFS VDS = 15 V, ID = 2.5 A V 0.6 V/°C 25°C 1 150°C 50 mA ±10 mA 1.5 W 4.5 V ON CHARACTERISTICS (Note 5) Forward Transconductance 1.25 3.0 3.5 S 530 pF DYNAMIC CHARACTERISTICS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 15 Total Gate Charge Qg 18.5 Gate−to−Source Charge Qgs Gate−to−Drain (“Miller”) Charge Qgd Plateau Voltage VGP 6.5 V Gate Resistance Rg 4.5 W 11 ns VDS = 25 V, VGS = 0 V, f = 1.0 MHz VDD = 250 V, ID = 5 A, VGS = 10 V 68 nC 4 10 RESISTIVE SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) VDD = 250 V, ID = 5 A, VGS = 10 V, RG = 5 W tf 15 24 14 SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted) Diode Forward Voltage VSD IS = 5 A, VGS = 0 V Reverse Recovery Time trr Reverse Recovery Charge Qrr VGS = 0 V, VDD = 30 V IS = 5 A, di/dt = 100 A/ms 5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 1.6 V 255 ns 1.25 mC NDF05N50Z, NDP05N50Z, NDD05N50Z 10.0 10.0 9.0 9.0 VGS = 8 V to 10 V 8.0 7.0 V 7.0 6.5 V 6.0 5.0 4.0 6.0 V 3.0 2.0 5.5 V 1.0 0.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TYPICAL CHARACTERISTICS 5 10 15 20 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 8.0 7.0 6.0 5.0 TJ = 25°C 4.0 TJ = 150°C 3.0 TJ = −55°C 2.0 1.0 5.0 V 0 VDS = 25 V 25 0.0 3 4 5 6 7 8 9 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 2. Transfer Characteristics 2.50 ID = 2.2 A TJ = 25°C 2.25 2.00 1.75 1.50 1.25 1.00 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 1. On−Region Characteristics 9.5 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 2.500 VGS = 10 V TJ = 25°C 2.250 2.000 1.750 1.500 1.250 1.000 0.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 10.0 TJ = 150°C ID = 2.2 A VGS = 10 V 2.00 IDSS, LEAKAGE (mA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.0 Figure 4. On−Resistance versus Drain Current and Gate Voltage 2.75 2.25 0.5 ID, DRAIN CURRENT (A) Figure 3. On−Region versus Gate−to−Source Voltage 2.50 10 1.75 1.50 1.25 1.00 0.75 1.0 0.50 0.25 −50 −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) 150 0.1 0 Figure 5. On−Resistance Variation with Temperature 50 100 150 200 250 300 350 400 450 500 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 3 NDF05N50Z, NDP05N50Z, NDD05N50Z TYPICAL CHARACTERISTICS TJ = 25°C VGS = 0 V f = 1 MHz C, CAPACITANCE (pF) 1000 900 800 700 600 Ciss 500 400 300 200 100 0 Crss 0 5 Coss 10 15 20 25 30 35 40 45 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 15.0 14.0 13.0 12.0 11.0 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 50 Figure 7. Capacitance Variation IS, SOURCE CURRENT (A) td(off) tr tf td(on) 10 1 200 VGS QGS QGD 150 100 VDS = 250 V ID = 5 A TJ = 25°C 0 2 4 6 8 10 12 14 16 Qg, TOTAL GATE CHARGE (nC) 18 50 0 20 100 100 1.0 250 VDS Figure 8. Gate−to−Source Voltage and Drain−to−Source Voltage versus Total Charge VDD = 250 V ID = 5 A VGS = 10 V 10 RG, GATE RESISTANCE (W) 10 TJ = 150°C 1.0 125°C 0.1 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 10. Diode Forward Voltage versus Current 100 10 VGS v 30 V SINGLE PULSE TC = 25°C 100 ms 1 ms 10 ms 0.01 0.1 10 ms dc 1 0.1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 25°C −55°C Figure 9. Resistive Switching Time Variation versus Gate Resistance ID, DRAIN CURRENT (A) t, TIME (ns) 1000 300 QT VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1100 VGS, GATE−TO−SOURCE VOLTAGE (V) 1200 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area NDD05N50Z http://onsemi.com 4 1000 1.2 NDF05N50Z, NDP05N50Z, NDD05N50Z TYPICAL CHARACTERISTICS 10 R(t) (C/W) 50% (DUTY CYCLE) 1 0.1 20% 10% 5.0% 2.0% 1.0% SINGLE PULSE 0.01 1E−06 RqJC = 4.4°C/W Steady State 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 1E+03 PULSE TIME (s) Figure 12. Thermal Impedance (Junction−to−Case) for NDF05N50Z 10 R(t) (C/W) 1 50% (DUTY CYCLE) 20% 10% 0.1 5.0% 2.0% 1.0% 0.01 1E−06 RqJC = 1.5°C/W Steady State SINGLE PULSE 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 1E+03 PULSE TIME (s) Figure 13. Thermal Impedance (Junction−to−Case) for NDD05N50Z R(t) (C/W) 100 10 50% (DUTY CYCLE) 20% 10% 5.0% 1 2.0% 1.0% 0.1 0.01 1E−06 RqJA = 38°C/W Steady State SINGLE PULSE 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 1E+01 PULSE TIME (s) Figure 14. Thermal Impedance (Junction−to−Ambient) for NDD05N50Z http://onsemi.com 5 1E+02 1E+03 NDF05N50Z, NDP05N50Z, NDD05N50Z LEADS HEATSINK 0.110″ MIN Figure 15. Mounting Position for Isolation Test Measurement made between leads and heatsink with all leads shorted together. ORDERING INFORMATION Package Shipping† NDF05N50ZG TO−220FP (Pb−Free) 50 Units / Rail (In Development) NDP05N50ZG TO−220AB (Pb−Free) 50 Units / Rail (In Development) NDD05N50Z−1G IPAK (Pb−Free) 75 Units / Rail NDD05N50ZT4G DPAK (Pb−Free) 2500 / Tape & Reel Order Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MARKING DIAGRAMS NDF05N50ZG or NDP05N50ZG AYWW Gate Source 1 2 3 Gate Drain Source Drain A Y WW G = Location Code = Year = Work Week = Pb−Free Package http://onsemi.com 6 4 Drain YWW 5N 50ZG YWW 5N 50ZG 4 Drain 2 1 Drain 3 Gate Source NDF05N50Z, NDP05N50Z, NDD05N50Z PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE K −T− −B− F SEATING PLANE C S Q U DIM A B C D F G H J K L N Q R S U A 1 2 3 H −Y− K G N L D J R 3 PL 0.25 (0.010) M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. Y INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE TO−220 CASE 221A−09 ISSUE AF −T− B F T SEATING PLANE C S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 5: PIN 1. 2. 3. 4. http://onsemi.com 7 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 NDF05N50Z, NDP05N50Z, NDD05N50Z PACKAGE DIMENSIONS DPAK CASE 369AA−01 ISSUE A −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F H J L R S U V Z H 3 U F J L D 0.13 (0.005) M T 6.20 0.244 2.58 0.101 3.0 0.118 5.80 0.228 1.6 0.063 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.63 0.89 0.46 0.61 0.77 1.14 9.80 10.40 0.46 0.58 2.29 BSC 4.57 5.45 0.60 1.01 0.51 −−− 0.89 1.27 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 2 PL INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.025 0.035 0.018 0.024 0.030 0.045 0.386 0.410 0.018 0.023 0.090 BSC 0.180 0.215 0.024 0.040 0.020 −−− 0.035 0.050 0.155 −−− 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. IPAK CASE 369D−01 ISSUE B C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F D G H 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T http://onsemi.com 8 MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− NDF05N50Z, NDP05N50Z, NDD05N50Z ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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