ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.2 • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz 24 21 1.0 • LG ≤ 0.20 µm, WG = 200 µm • LOW COST METAL CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION The NE32984D is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. This device is housed in an epoxy-sealed, metal/ceramic package and is intended for high volume consumer and industrial applications. Noise Figure, NF (dB) GA 0.8 18 0.6 15 12 0.4 NF 0.2 9 Associated Gain, GA (dB) • VERY LOW NOISE FIGURE: 0.40 dB Typical at 12 GHz 6 0 2 6 4 8 10 20 30 Frequency, f (GHz) NEC's stringent quality assurance and test procedures assure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER NE32984D PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS 84D UNITS NF1 Optimum Noise Figure, VDS = 2 V, IDS = 10 mA, f = 12 GHz dB GA 1 Associated Gain, VDS = 2 V, IDS = 10 mA, f = 12 GHz dB IDSS Saturated Drain Current, VDS = 2 V,VGS = 0 V MIN TYP MAX 0.40 0.50 11.0 12.5 mA 20 60 90 VP Pinch-off Voltage, VDS = 2 V, IDS = 100 µA V -2.0 -0.7 -0.2 gm Transconductance, VDS = 2 V, ID = 10 mA mS 45 60 µA 0.5 RTH (CH-A) Thermal Resistance (Channel to Ambient) °C/W 750 RTH (CH-C) Thermal Resistance (Channel to Case) °C/W IGSO Gate to Source Leakage Current, VGS = -3 V 10.0 350 Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening tuned for the "generic" type but not each specimen. California Eastern Laboratories NE32984D ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VDS Drain to Source Voltage V 4.0 VGS Gate to Source Voltage V -3.0 IDS Drain Current mA IDSS IGRF Gate Current µA 100 TCH Channel Temperature °C TSTG Storage Temperature PT Total Power Dissipation NOISE PARAMETERS VDS = 2 V, ID = 10 mA Γopt FREQ. NFMIN. GA (GHz) (dB) (dB) MAG ANG Rn/50 2.0 0.29 20.0 0.85 20 0.30 4.0 0.30 18.3 0.75 41 0.28 6.0 0.31 16.5 0.68 63 0.20 150 8.0 0.34 15.0 0.61 86 0.13 °C -65 to +150 10.0 0.37 13.6 0.56 111 0.09 mW 165 12.0 0.40 12.5 0.52 137 0.05 14.0 0.49 12.0 0.47 164 0.04 16.0 0.63 11.8 0.40 -168 0.04 18.0 0.81 11.5 0.31 -139 0.07 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 100 80 Drain Current, ID (mA) Total Power Dissipation, PT (mW) 200 150 100 50 VGS = 0 V 60 -0.2 V 40 -0.4 V 20 -0.6 V -0.8 V 100 50 0 200 150 Drain to Source Voltage, VDS (V) Ambient Temperature, TA (°C) NOISE FIGURE AND ASSOCIATED GAIN vs. DRAIN CURRENT MAXIMUM STABLE GAIN AND FORWARD INSERTION GAIN vs. FREQUENCY 24 VDS = 2 V f = 12 GHZ VDS = 2 V ID = 10 mA 14 GA 13 20 MSG Noise Figure, NF (dB) Maximum Stable Gain, MSG (db) Forward Insertion Gain, IS21S I2 (db) 3.0 1.5 16 IS21SI 2 12 8 12 2.0 11 1.5 10 1.0 0.5 NF 4 1 2 4 6 8 10 Frequency, f (GHz) 14 20 30 0 10 20 Drain Current, ID (mA) 30 Associated Gain, GA (dB) 0 NE32984D TYPICAL SCATTERING PARAMETERS (TA = 25°C) NE32984D VDS = 2 V, ID = 10 mA FREQUENCY S11 (GHz) MAG 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 .984 .960 .919 .868 .816 .786 .759 .736 .689 .659 .621 .590 .554 .522 .491 .461 .452 S21 ANG -26.4 -39.3 -52.8 -64.5 -75.5 -85.7 -95.9 -106.3 -116.2 -125.6 -135.5 -146.3 -157.9 -171.0 173.0 153.2 129.4 MAG 4.583 4.480 4.332 4.141 3.923 3.786 3.659 3.547 3.375 3.264 3.217 3.186 3.172 3.180 3.220 3.303 3.367 S12 ANG 146.9 130.6 114.3 98.8 84.4 70.8 57.1 43.1 30.1 17.5 4.9 -8.0 -21.3 -35.2 -49.9 -65.6 -83.4 MAG .029 .041 .050 .057 .060 .064 .066 .068 .071 .074 .079 .085 .093 .104 .114 .124 .137 S22 ANG 66.4 55.9 47.9 38.5 31.2 26.0 21.7 18.2 16.0 13.2 11.4 7.3 2.0 -5.5 -12.6 -23.3 -36.4 MAG .549 .520 .481 .447 .418 .396 .382 .374 .368 .370 .374 .391 .406 .417 .432 .445 .453 K MAG1 .13 .22 .31 .45 .58 .63 .69 .75 .86 .91 .94 .92 .91 .86 .82 .78 .72 22.0 20.4 19.4 18.6 18.2 17.7 17.4 17.2 16.8 16.4 16.1 15.7 15.3 14.9 14.5 14.3 13.9 ANG -32.0 -47.8 -64.5 -81.9 -99.8 -116.7 -132.6 -147.8 -163.0 -178.3 167.4 155.0 143.2 132.1 119.7 106.3 91.0 (dB) Note: 1. Gain calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE32984D OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 84D 1.78 ± 0.2 S 1.78 ± 0.2 D L S 0.5 ± 0.1 (ALL LEADS) G 1.0 MIN ±0.2 (ALL LEADS) 1.7 MAX +0.07 0.1 -0.03 Part Number Designator (Letter). When the letter is upright, the gate lead is to the right. ORDERING INFORMATION PART NUMBER AVAILABILITY LEAD LENGTH PACKAGE OUTLINE NE32984D-S Bulk up to 1K 1.0 mm 84D NE32984D-T1 1K/Reel 1.0 mm 84D NE32984D-SL Bulk up to 1K 1.7 mm 84D-SL EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER - 1/96 DATA SUBJECT TO CHANGE WITHOUT NOTICE