2N6726 2N6727 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC = 1 Amp * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO 2N6726 -40 2N6727 -50 UNIT V Collector-Emitter Voltage VCEO -30 -40 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Power Dissipation at Tamb= 25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1 W -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL 2N6726 Collector-Base Breakdown Voltage V(BR)CBO -40 UNIT CONDITIONS. -50 V IC=-1mA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -30 -40 V IC=-10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -5 -5 V IE=-1mA, IC=0 Collector Cut-Off Current ICBO -0.1 -0.1 µA µA VCB=-40V, IE=0 VCB=-50V, IE=0 Emitter Cut-Off Current IEBO -0.1 -0.1 µA VEB=-5V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) -0.5 -0.5 V IC=-1A, IB=-100mA* Base-Emitter Turn-On Voltage VBE(on) -1.2 -1.2 V IC=-1A, VCE=-1V* MIN. Static Forward hFE Current Transfer Ratio 55 60 50 Transition Frequency fT 50 Collector Base Capacitance CCB MAX. 2N6727 MIN. MAX. IC=-10mA, VCE=-1V* IC=-100mA, VCE=-1V* IC=-1A, VCE=-1V* 250 55 60 50 250 500 50 500 MHz IC=-50mA, VCE=-10V 30 pF VCE=-10V, f=1MHz 30 3-8