NJG1131HA8 UHF BAND LOW NOISE AMPLIFIER GaAs MMIC QGENERAL DESCRIPTION NJG1131HA8 is a low noise amplifier GaAs MMIC designed for mobile digital TV application (470~770 MHz). This IC features good gain flatness, and low gain characteristic in out-of-band. This IC achieves low current consumption, low noise figure and low distortion. Also, this IC is integrated the ESD protection circuit. An ultra-small and ultra-thin package of USB6-A8 is adopted. QFEATURES O Wide operating frequency range O Low voltage operation O Low current consumption O Gain O Low noise figure O High P-1dB(IN) O High Input IP3 O Ultra-small & ultra-thin package QPACKAGE OUTLINE NJG1131HA8 470~770MHz +2.7V typ. 3.4mA typ. 10.0dB typ. 1.4dB typ. -5.0dBm typ. +5.0dBm typ. USB6-A8 (Package size: 1mm x 1.2mm x 0.38mm typ.) QPIN CONFIGURATION (Top View) GND VG 6 1 RFOUT 5 Bias Circuit Pin Connection 1. GND 2. RFIN 3. GND 4. GND 5. RFOUT 6. VG 1 Pin INDEX 2 RFIN 4 GND 3 GND Note: Specifications and description listed in this catalog are subject to change without notice. Ver.2007-06-08 -1- NJG1131HA8 Q ABSOLUTE MAXIMUM RATINGS Ta=+25°C, Zs=Zl=50 ohm PARAMETER SYMBOL CONDITIONS RATINGS UNITS 5 V Drain Voltage VDD VDD terminal Input power PIN VDD=2.7V +15 dBm Power dissipation PD On PCB board, Tjmax=150°C 150 mW Operating temperature Topr -40~+85 °C Storage temperature Tstg -55~+150 °C Q ELECTRICAL CHARACTERISTICS 1 (DC) General conditions: VDD=2.7V, Ta=+25°C, Zs=Zl=50 ohm, with application circuit. PARAMETERS SYMBOL Operating voltage VDD Operating Current IDD CONDITIONS RF OFF MIN TYP MAX UNITS 2.3 2.7 3.6 V - 3.4 5.0 mA Q ELECTRICAL CHARACTERISTICS 2 (RF) General conditions: VDD= 2.7V, fRF=470~770MHz, Ta=+25°C, Zs=Zl=50 ohm, with application circuit. PARAMETERS MIN TYP MAX UNITS fRF 470 620 770 MHz Small signal gain Gain 8.0 10.0 12.0 dB Gain flatness Gflat - 1.1 1.4 dB Noise figure NF - 1.4 1.8 dB -8.0 -5.0 - dBm +2.0 +5.0 - dBm Operating Frequency Input power at 1dB gain compression point Input 3rd order intercept point SYMBOL CONDITIONS Exclude PCB & connector losses (0.05dB) P-1dB(IN) IIP3 f1=fRF, f2=fRF+100kHz, Pin=-28dBm RF IN VSWR VSWRi - 2.6 3.0 RF OUT VSWR VSWRo - 2.9 3.3 -2- NJG1131HA8 QTERMINAL INFORMATION No. SYMBOL DESCRIPTION 1 GND Ground terminal. 2 RFIN RF input terminal. This terminal requires the DC-blocking capacitor and the DC-feed Inductor as shown in the application circuit. 3 GND Ground terminal. 4 GND Ground terminal. 5 RFOUT RF output terminal. This terminal requires the external matching circuit as shown in the application circuit. 6 VG Power supply pin of the bias circuit. Please supply the voltage as same as the LNA voltage. CAUTION 1) Ground terminals (1pin, 3pin and 4pin) should be connected with the ground plane close as possible. -3- NJG1131HA8 Q ELECTRICAL CHARACTERISTICS (Conditions: Ta=+25°C, VDD=2.7V, Zs=Zl=50 ohm, with application circuit.) Pout vs. Pin Gain, IDD vs. Pin (fRF=620MHz) (fRF=620MHz) 10 12 5 8 11 7 Gain 0 10 6 9 5 8 4 -10 Pout -15 7 -20 2 5 -30 1 P-1dB(IN)=-3.4dBm -35 -30 -25 -20 -15 -10 -5 P-1dB(IN)=-3.4dBm 4 0 0 -40 -35 -30 -25 Pin (dBm) Pout, IM3 vs. Pin -10 -5 0 Gain, NF vs. Frequency 20 12 4 11 0 3.5 Gain Pout Gain (dB) Pout, IM3 (dBm) -15 Pin (dBm) (f1=620MHz, f2=620.1MHz) -20 -20 -40 10 3 9 2.5 8 2 7 -60 1.5 NF 6 1 5 0.5 -80 IIP3=+7.6dBm IM3 -100 -40 -30 -20 -10 0 4 10 400 450 500 Pin (dBm) 550 600 650 700 750 0 800 Frequency (MHz) IIP3, OIP3 vs. Frequency P-1dB(IN) vs. Frequency (f1=Frequency, f2=Frequency+0.1MHz, Pin=-28dBm) 5 20 OIP3 15 IIP3, OIP3 (dBm) P-1dB(IN) (dBm) 0 P-1dB(IN) -5 -4- IIP3 5 -10 -15 400 10 450 500 550 600 650 Frequency (MHz) 700 750 800 0 400 450 500 550 600 650 Frequency (MHz) 700 750 800 NF (dB) -35 -40 3 IDD 6 -25 IDD (mA) Gain (dB) Pout (dBm) -5 NJG1131HA8 Q ELECTRICAL CHARACTERISTICS (Conditions: Ta=+25°C, VDD=2.7V, Zs=Zl=50 ohm, with application circuit.) Gain, NF vs. VDD K-factor vs. Frequency (fRF=620MHz) 30 12 25 10 6 5 8 4 6 3 10 4 2 5 2 Gain (dB) K-factor 20 15 NF (dB) Gain NF 1 0 0 0 0 5000 10000 15000 20000 0 1 2 Frequency (MHz) 3 4 5 VDD (V) P-1dB(IN) vs. VDD IIP3, OIP3 vs. VDD (fRF=620MHz) (f1=620MHz, f2=620.1MHz, Pin=-28dBm) 5 25 20 IIP3, OIP3 (dBm) P-1dB(IN) (dBm) 0 P-1dB(IN) -5 15 OIP3 10 5 IIP3 -10 0 -5 -15 0 1 2 3 4 0 5 1 3 VDD (V) IDD vs. VDD VSWR vs. VDD (RF OFF) 4 5 4 5 (fRF=470~770MHz) 8 6 7 VSWRi(max.), VSWRo(max.) 7 5 IDD (mA) 2 VDD (V) 4 3 IDD 2 1 6 5 4 VSWRo(max.) 3 2 VSWRi(max.) 1 0 0 0 1 2 3 VDD (V) 4 5 0 1 2 3 VDD (V) -5- NJG1131HA8 Q ELECTRICAL CHARACTERISTICS (Conditions: VDD=2.7V, Zs=Zl=50 ohm, with application circuit.) P-1dB(IN) vs. Temp. Gain, NF vs. Temp. (fRF=620MHz) (fRF=620MHz) 5 6 12 Gain 5 10 4 6 3 4 2 P-1dB(IN) (dBm) 8 NF (dB) Gain (dB) 0 P-1dB(IN) -5 -10 NF 1 2 0 -50 0 50 0 100 -15 -50 0 50 Temperature (C o) Temperature (C o) 100 IDD vs. Temp. IIP3, OIP3 vs. Temp. (RF OFF) (f1=620MHz, f2=620.1MHz, Pin=-28dBm) 7 25 6 20 5 15 IDD (mA) IIP3, OIP3 (dBm) OIP3 10 4 3 IDD IIP3 2 5 1 0 -50 0 50 100 o Temperature (C ) (fRF=470~770MHz) 8 VSWRi(max.), VSWRo(max.) 7 6 5 4 VSWRo(max.) 3 VSWRi(max.) 1 0 -50 0 50 Temperature (C o) -6- 0 50 Temperature (C o) VSWR vs. Temp. 2 0 -50 100 100 NJG1131HA8 Q ELECTRICAL CHARACTERISTICS (Conditions: Ta=+25°C, VDD=2.7V, Zs=Zl=50 ohm, with application circuit.) S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (~20GHz) S21, S12 (~20GHz) -7- NJG1131HA8 Q TEST CIRCUIT C3 1000pF VG GND RFOUT 6 1 VDD=2.7V L3 27nH RFOUT 5 L2 56nH Bias Circuit C2 3pF RFIN 2 C1 68pF RFIN L1 33nH 4 GND 3 GND Q TEST PCB LAYOUT Parts List Parts ID VDD L1~L3 C1~C3 C3 L3 L1 RF IN C1 Notes MURATA (LQP03T series) MURATA (GRM03 series) L2 C2 RF OUT PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH=0.4mm (Z0=50 ohm) PCB SIZE=16.8mmx16.8mm PRECAUTIONS [1] C1 is a DC-Blocking capacitor, and L1 is a DC-feed inductor. [2] L2, L3, and C2 formed the output matching circuit. [3] C3 is a bypass capacitor. [4] Ground terminals (1pin, 3pin and 4pin) should be connected with ground plane as close as possible in order to limit ground path induction. [5] All external parts are placed as close as possible to the IC. -8- NJG1131HA8 Q MEASUREMENT BLOCK DIAGRAM VDD=2.7V VDD=2.9V RF Output RF Input DUT Port2 Port1 Network Analyzer S parameter Measurement Block Diagram VDD=2.7V VDD=2.9V RF Input RF Output DUT N.S. Output Input Noise Source NF Analyzer Meter Noise Figure Measurement Block Diagram freq1 VDD=2.7V 3dB Attenuator Signal Generator RF Input Signal Generator freq2 DUT RF Output Spectrum Analyzer Power Comb. 3dB Attenuator IF and IM3 Measurement Block Diagram for IIP3 -9- NJG1131HA8 0.38±0.06 +0.012 0.038-0.009 QPACKAGE OUTLINE (USB6-A8) 0.03 0.2 (MIN0.15) S S TERMINAL TREAT Substrate Molding material UNIT WEIGHT :Au :FR5 :Epoxy resin :mm :1.1mg 0.2±0.04 C0.1 6 R0.05 5 1 4 0.2±0.04 0.4 0.6 Photo resist coating 0.8 1.2±0.05 0.1±0.05 2 3 0.4 0.2±0.07 1.0±0.05 Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. - 10 - [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.