2N7218, JANTX2N7218, JANTXV2N7218 2N7219, JANTX2N7219, JANTXV2N7219 2N7221, JANTX2N7221, JANTXV2N7221 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/596 100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated FEATURES • • • • • • Repetitive Avalanche Rating Isolated and Hermetically Sealed Low RDS(on) Ease of Paralleling Ceramic Feedthroughs Qualified to MIL-PRF-19500 DESCRIPTION This hermetically packaged QPL product features the latest advanced MOSFET and packaging technology. It is ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. PRIMARY ELECTRICAL CHARACTERISTICS @ TC = 25°C PART NUMBER 2N7218 2N7219 2N7221 2N7222 V DS, Volts 100 200 400 500 R DS(on) .070 .18 .55 .85 S C H E M ATIC ID, A m p s 28 18 10 8 MECHANICAL OUTLINE .545 .535 .144 DIA. .050 .040 .800 .790 .685 .665 1 2 Pin Connection Pin 1: Drain Pin 2: Source Pin 3: Gate .550 .530 3 .550 .510 .005 .045 .035 .150 TYP. .150 TYP. 7 03 R0 3.1 - 1 .260 .249 2N7218, JANTX2N7218, JANTXV2N7218 2N7219, JANTX2N7219, JANTXV2N7219 2N7221, JANTX2N7221, JANTXV2N7221 2N7222, JANTX2N7222, JANTXV2N7222 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted Parameter ID @ VGS = 10V, TC = 25°C JANTXV, JANTX, 2N7218 Units Continuous Drain Current 28 A ID @ VGS = 10V, TC = 100°C Continuous Drain Current 20 A 1 ID M Pulsed Drain Current 112 A P D @ TC = 25°C Maximum Power Dissipation 125 W Linear Derating Factor 1.0 W/°C VG S Gate-Source Voltage ± 20 EA S Single Pulse Avalanche Energy 2 250 1 IA R Avalanche Current 28 1 EA R TJ TS T G Repetitive Avalanche Energy Operating Junction Storage Temperature Range Lead Temperature V 4 4 12.5 mJ A 4 -55 to 150 300(.06 from case for 10 sec) mJ °C °C ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified) Parameter Min. BVDSS Drain-Source Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IG S S Gate -to-Source Leakage Forward IG S S Gate -to-Source Leakage Reverse Q G(on) On-state Gate Charge QGS Gate-to-Source Charge Q Gd Gate-to-Drain (“Miller”) Charge tD(on) Turn-On Delay Time tr Rise Time tD(off) Turn-Off Delay Time tr Fall Time Typ. Max. Units 100 VG S = 0V, ID =1.0 mA, VG S = 10 V, ID = 20 A 3 VG S = 10 V, ID = 28 A 3 VDS = VG S,ID = 250 µA VD S = 80 V, VG S = 0V VD S = 80 V, VG S = 0V, TJ = 125°C VG S = 20 V VG S = -20 V VG S = 10 V, ID = 28A VD S = 50 V See note 4 VD D = 50 V, ID = 20A, RG =9.1 See note 4 ----------------------------- 0.077 0.125 4.0 25 250 100 -100 59 16 30.7 21 105 64 65 nA nA nC nC nC ns ns ns ns Source-Drain Diode Ratings and Characteristics Parameter Min. VS D Diode Forward Voltage --ttrr Reverse Recovery Time --- Typ. ----- Max. 1.5 400 Units V ns Thermal Resistance Parameter Junction-to-Case R thJC R thCS Case-to-sink R thJA Junction-to-Ambient Typ. --0.21 --- Max. 1.0 --48 Units Test Conditions °C/W Mounting surface flat, smooth, and greased 1. 2. 3. 4. ----2.0 ----------------------- V Test Conditions Min. ------- V µA Test Conditions TJ = 25°C, IS = 28A 3,VG S = 0 V TJ = 25°C, IF= 28A,di/dt<100A/µs 3 Typical socket mount Repetitive Rating: Pulse width limited by maximum junction temperature. @VD D= 25V, Starting TJ = 25°C, L > 480 µH, RG = 25 , Peak IL = 28A Pulse width < 300 µs; Duty Cycle < 2 % See MIL-S-19500/596 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 2N7218, JANTX2N7218, JANTXV2N7218 2N7219, JANTX2N7219, JANTXV2N7219 2N7221, JANTX2N7221, JANTXV2N7221 2N7222, JANTX2N7222, JANTXV2N7222 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted Parameter ID @ VGS = 10V, TC = 25°C JANTXV, JANTX, 2N7219 Continuous Drain Current ID @ VGS = 10V, TC = 100°C Continuous Drain Current Units 18 A 11 A ID M Pulsed Drain Current 72 A P D @ TC = 25°C Maximum Power Dissipation 125 W Linear Derating Factor 1.0 W/°C 1 VG S Gate-Source Voltage EA S Single Pulse Avalanche Energy ± 20 IA R Avalanche Current1 2 18 1 EA R TJ TS T G Repetitive Avalanche Energy Operating Junction Storage Temperature Range Lead Temperature V 4 450 4 12.5 mJ A 4 -55 to 150 300(.06 from case for 10 sec) mJ °C °C ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified) Parameter Min. BVDSS Drain-Source Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IG S S Gate -to-Source Leakage Forward IG S S Gate -to-Source Leakage Reverse Q G(on) On-state Gate Charge QGS Gate-to-Source Charge Q Gd Gate-to-Drain (“Miller”) Charge tD(on) Turn-On Delay Time tr Rise Time tD(off) Turn-Off Delay Time tr Fall Time Typ. Max. Units 200 VG S = 0V, ID =1.0 mA, VG S = 10 V, ID = 11 A 3 VG S = 10 V, ID = 18 A 3 VDS = VG S,ID = 250 µA VD S = 160 V, VG S = 0V VD S = 160 V, VG S = 0V, TJ = 125°C VG S = 20 V VG S = -20 V VG S = 10 V, ID = 18A VD S = 100 V See note 4 VD D = 100 V, ID = 11A, RG =9.1 See note 4 ----------------------------- 0.18 0.25 4.0 25 250 100 -100 60 10.6 37.6 20 105 58 67 nA nA nC nC nC ns ns ns ns Source-Drain Diode Ratings and Characteristics Parameter Min. Diode Forward Voltage --VS D ttrr Reverse Recovery Time --- Typ. ----- Max. 1.5 500 Units V ns Thermal Resistance Parameter R thJC Junction-to-Case R thCS Case-to-sink R thJA Junction-to-Ambient Typ. --0.21 --- Max. 1.0 --48 Units Test Conditions °C/W Mounting surface flat, smooth, and greased 1. 2. 3. 4. ----2.0 ----------------------- V Test Conditions Min. ------- V µA Test Conditions TJ = 25°C, IS = 18A 3,VG S = 0 V TJ = 25°C, IF= 18A,di/dt<100A/µs 3 Typical socket mount Repetitive Rating: Pulse width limited by maximum junction temperature. @VD D= 50V, Starting TJ = 25°C, L > 2.1 mH, RG = 25 , Peak IL = 18A Pulse width < 300 µs; Duty Cycle < 2 % See MIL-S-19500/596 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 2N7218, JANTX2N7218, JANTXV2N7218 2N7219, JANTX2N7219, JANTXV2N7219 2N7221, JANTX2N7221, JANTXV2N7221 2N7222, JANTX2N7222, JANTXV2N7222 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted Parameter ID @ VGS = 10V, TC = 25°C JANTXV, JANTX, 2N7221 Units Continuous Drain Current 10 A ID @ VGS = 10V, TC = 100°C Continuous Drain Current 6.0 A ID M Pulsed Drain Current 40 A P D @ TC = 25°C Maximum Power Dissipation 125 W Linear Derating Factor 1.0 W/°C 1 VG S Gate-Source Voltage EA S Single Pulse Avalanche Energy ± 20 IA R Avalanche Current1 2 10 1 EA R TJ TS T G Repetitive Avalanche Energy Operating Junction Storage Temperature Range Lead Temperature V 4 650 4 12.5 mJ A 4 -55 to 150 300 (.06 from case for 10 sec) mJ °C °C ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified) Parameter Min. BVDSS Drain-Source Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IG S S Gate -to-Source Leakage Forward IG S S Gate -to-Source Leakage Reverse Q G(on) On-state Gate Charge QGS Gate-to-Source Charge Q Gd Gate-to-Drain (“Miller”) Charge tD(on) Turn-On Delay Time tr Rise Time tD(off) Turn-Off Delay Time tr Fall Time Typ. Max. Units 400 VG S = 0V, ID =1.0 mA, V G S = 10 V, ID = 6.0 A 3 VG S = 10 V, ID = 10 A 3 V DS = VG S,ID = 250 µA VD S = 320 V, VG S = 0V VD S = 320 V, VG S = 0V, TJ = 125°C VG S = 20 V VG S = -20 V VG S = 10 V, ID = 10A VD S = 200 V See note 4 VD D = 200 V, ID = 6A, RG = 9.1 See note 4 ----------------------------- 0.55 0.70 4.0 25 250 100 -100 65 10 40.5 25 92 79 58 nA nA nC nC nC ns ns ns ns Source-Drain Diode Ratings and Characteristics Parameter Min. Diode Forward Voltage --VS D ttrr Reverse Recovery Time --- Typ. ----- Max. 1.5 600 Units V ns Thermal Resistance Parameter R thJC Junction-to-Case R thCS Case-to-sink R thJA Junction-to-Ambient Typ. --0.21 --- Max. 1.0 --48 Units Test Conditions °C/W Mounting surface flat, smooth, and greased 1. 2. 3. 4. ----2.0 ----------------------- V Test Conditions Min. ------- V µA Test Conditions TJ = 25°C, IS = 10A 3,VG S = 0 V TJ = 25°C, IF= 10A,di/dt<100A/µs 3 Typical socket mount Repetitive Rating: Pulse width limited by maximum junction temperature. @VD D= 50V, Starting TJ = 25°C, L > 11.4 mH, RG = 25 , Peak IL = 10A Pulse width < 300 µs; Duty Cycle < 2 % See MIL-S-19500/596 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 2N7218, JANTX2N7218, JANTXV2N7218 2N7219, JANTX2N7219, JANTXV2N7219 2N7221, JANTX2N7221, JANTXV2N7221 2N7222, JANTX2N7222, JANTXV2N7222 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted Parameter ID @ VGS = 10V, TC = 25°C JANTXV, JANTX, 2N7222 Units Continuous Drain Current 8.0 A ID @ VGS = 10V, TC = 100°C Continuous Drain Current 5.0 A ID M Pulsed Drain Current 32 A P D @ TC = 25°C Maximum Power Dissipation 125 W Linear Derating Factor 1.0 W/°C 1 VG S Gate-Source Voltage EA S Single Pulse Avalanche Energy ± 20 IA R Avalanche Current1 2 1 EA R TJ TS T G Repetitive Avalanche Energy Operating Junction Storage Temperature Range Lead Temperature V 700 4 mJ 8.0 4 A 12.5 4 -55 to 150 300(.06 from case for 10 sec) mJ °C °C ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified) Parameter Min. BVDSS Drain-Source Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IG S S Gate -to-Source Leakage Forward IG S S Gate -to-Source Leakage Reverse Q G(on) On-state Gate Charge QGS Gate-to-Source Charge Q Gd Gate-to-Drain (“Miller”) Charge tD(on) Turn-On Delay Time tr Rise Time tD(off) Turn-Off Delay Time tr Fall Time Typ. Max. Units 500 VG S = 0V, ID =1.0 mA, VG S = 10 V, ID = 5.0 A 3 VG S = 10 V, ID = 8.0 A 3 VDS = VG S,ID = 250 µA VD S = 400 V, VG S = 0V VD S = 400 V, VG S = 0V, TJ = 125°C VG S = 20 V VG S = -20 V VG S = 10 V, ID = 8.0A VD S = 250 V See note 4 VD D = 250 V, ID = 5.0A, RG = 9.1 See note 4 ----------------------------- 0.85 0.95 4.0 25 250 100 -100 68.5 12.5 42.4 21 73 72 51 nA nA nC nC nC ns ns ns ns Source-Drain Diode Ratings and Characteristics Parameter Min. Diode Forward Voltage --VS D ttrr Reverse Recovery Time --- Typ. ----- Max. 1.5 700 Units V ns Thermal Resistance Parameter R thJC Junction-to-Case R thCS Case-to-sink R thJA Junction-to-Ambient Typ. --0.21 --- Max. 1.0 --48 Units Test Conditions °C/W Mounting surface flat, smooth, and greased 1. 2. 3. 4. ----2.0 ----------------------- V Test Conditions Min. ------- V µA Test Conditions TJ = 25°C, IS = 8.0A 3,VG S = 0 V TJ = 25°C, IF= 8.0A,di/dt<100A/µs 3 Typical socket mount Repetitive Rating: Pulse width limited by maximum junction temperature. @VD D= 50V, Starting TJ = 25°C, L > 20 mH, RG = 25 , Peak IL = 8A Pulse width < 300 µs; Duty Cycle < 2 % See MIL-S-19500/596 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246