NTE2993 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D Repetitive Avalanche Ratings D Dynamic dv/dt Rating D Simple Drive Requirements D Ease of Paralleling Absolute Maximum Ratings: Drain−Source Voltage (VGS = 0V, ID = 1mA), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Continuous Drain Current (VGS = 10V), ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56A Maximum Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W/°C Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.3mJ Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mJ Peak Diode Recovery (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C Lead temperature (During Soldering, .063” (1.6mm) from case, 10sec max), TL . . . . . . . . . +300°C Thermal Resistance, Junction−to−Ambient (Typical Socket Mount), RthJA . . . . . . . . . . . . . . . 30K/W Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83K/W Note 1. Repetitive Rating; Pulse width limited by maximum junction temperature. Note 2. VDD = 50V, Starting TJ = +150°C, Peak IL = 14A. Note 3. ISD ≤ 14A, di/dt ≤ 145A/µs, VDD ≤ 400V, TJ ≤ +150°C. Electrical Characteristics: (TJ = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 400 − − V − 0.46 − V/°C 2.0 − 4.0 V VDS = 320 − − 25 µA VGS = 0V, TJ = 125°C − − 250 µA Drain−Source Breakdown Voltage V(BR)DSS ID = 1mA, VGS = 0V Temperature Coefficient of Breakdown Voltage ∆V(BR)DSS Reference to +25°C, ID = 1mA ∆TJ VGS(th) VDS = VGS, ID = 250µA Gate Threshold Voltage Zero Gate Voltage Drain Current IDSS On−State Drain Current ID(on) VDS > ID(on) x RDS(on) max, VGS = 10V 15 − − A Gate−Source Leakage Forward IGSS VGS = 20V − − 100 nA Gate−Source Leakage Reverse IGSS VGS = −20V −100 nA Drain−Source On−State Resistance Forward Transconductance RDS(on) ( ) VGS = 10V, ID = 9A , Note 4 − − 0.3 Ω VGS = 10V, ID = 14A, Note 4 − − 0.4 Ω 6.0 − − S gfs ID = 3A, VDS = 10V, Note 4 Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1.0 MHz − 2600 − pF Output Capacitance Coss − 680 − pF Reverse Transfer Capacitance Crss − 250 − pF Turn−On Time td(on) − − 35 ns tr − − 190 ns td(off) − − 170 ns tf − − 130 ns 52 − 110 nC Rise Time Turn−Off Time Fall Time VDD = 200V, ID = 14A, RG = 2.35Ω Total Gate Charge Qg Gate−Source Charge Qgs 5.0 − 18 nC Gate−Drain (“Miller”) Charge Qgd 25 − 65 nC − 6.1 − nH − − 14 A Internal Drain Inductance LS + LD VGS = 10V, ID = 14A, VDS = 200V Measured between the contact screw on header that is closer to source and gate pins and center of die. Source−Drain Diode Ratings and Characteristics: Continuous Source Current IS Pulse Source Current ISM Note 1 − − 56 A Diode Forward Voltage VSD TJ = +25°C, IS = 14A, VGS = 0V, Note 4 − − 1.7 V Reverse Recovery Time trr TJ = +25°C, IF = 14A, dl/dt ≤100A/µs, VDD ≤ 50V 50V, Note 4 − − 1200 ns − − 250 µc Reverse Recovered Charge Forward Turn−on Time QRR ton Intrinsic turn−on time is negligible. Turn−on speed is substantially controlled by LS + LD. Note 1. Repetitive Rating; Pulse width limited by maximum junction temperature. Note 4. Pulse width ≤ 300µs, Duty Cycle 2%. .135 (3.45) Max .875 (22.2) Dia Max .350 (8.89) Seating Plane .312 (7.93) Min .040 (1.02) 1.187 (30.16) Source .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Gate Drain