NTE2928 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Type Package Features: D RDS(on) = 550mW Max @ VGS = 10V, ID = 6A D Low Gate Charge: 22nC Typ D Low CRSS: 11pF Typ D 100% Avalanche Tested Applications: D LCD/LED/PDP TV D Lighting D Uninterruptible Power Supply D G S Absolute Maximum Ratings: (TC = +255C unless otherwise specified) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30V Drain Current, ID Continuous TC = +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.5A TC = +1005C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.9A Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46A Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 456mJ Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.5A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16.7mJ Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns Power Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165W Derate Above +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33W/5C Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Maximum Lead temperature (During Soldering, 1/8” from case, 5 sec ), TL . . . . . . . . . . . . . . +3005C Maximum Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.755C/W Maximum Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . 62.55C/W Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 2. L = 6.9mH, IAS = 11.5A, VDD = 50V, RG = 25W, starting TJ = +255C. Note 3. ISD 3 11.5A, di/dt 3 200A/ms, VDD 3 V(BR)DSS, starting TJ = +255C. Electrical Characteristics: (TC = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 500 − − V − 0.5 − V/_C VDS = 500V, VGS = 0 − − 1.0 mA VDS = 400V, TC = +125_C − − 10 mA IGSS VGS = +30V, VDS = 0V − − +100 nA Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250mA 3.0 − 5.0 V Static Drain−Source ON Resistance RDS(on) VGS = 10V, ID = 6A − 0.55 0.65 W gFS VDS = 40V, ID = 6A − 11.5 − S Input Capacitance Ciss − 985 1315 pF Output Capacitance Coss VGS = 0V, VDS = 25V, f = 1MHz − 140 190 pF Reverse Transfer Capacitance Crss − 11 17 pF Total Gate Charge Qg − 22 30 nC Gate−Source Charge Qgs − 6 − nC Gate−Drain Charge Qgd − 9 − nC − 24 60 ns − 50 110 ns td(off) − 45 100 ns tf − 30 70 ns IS − − 11.5 A Maximum Pulsed Drain-Source Diode Forward Current ISM − − 46 A Drain−Source Diode Forward Voltage VSD VGS = 0V, IS = 11.5A − − 1.4 V VGS = 0V, ISD = 11.5A, dIF/dt = 100A/ms − 375 − ns − 3.5 − mC OFF Characteristics Drain−Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−Body Leakage Current V(BR)DSS VGS = 0V, ID = 250mA, TJ = +25_C DV(BR)DSS/DTJ ID = 250mA, Referenced to +25_C IDSS ON Characteristics Forward Transconductance Dynamic Characteristics VDD = 400V, ID = 11.5A, VGS = 10V, Note 4 Switching Characteristics Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr VDD = 250V, ID = 11.5A, VGS = 10V, RG = 25W, Note 4 Drain−Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Reverse Recovery Time trr Reverse Recovery Charge Qrr Note 4. Essentially independent of operating temperature typical characteristics. .420 (10.67) Max .110 (2.79) Tab .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain/Tab