NTE NTE2379

NTE2379
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Dynamic dv/dt Rating
D Repetitive Avalanche Rated
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
Absolute Maximum Ratings:
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Drain Current, ID
Continuous (VGS = 10V)
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Gate Current (Pulsed), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.5A
Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 570mJ
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V/ns
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Maximum Lead Temperature (During Soldering, 1/16” from case, 10sec), TL . . . . . . . . . . . . +300°C
Thermal Resistance:
Maximum Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W
Typical Case–to–Sink (Mounting surface flat, smooth, and greased), RthCS . . . . . . 0.5°C/W
Maximum Junction–to–Ambient (Free Air Operation), RthJA . . . . . . . . . . . . . . . . . . . . 62°C/W
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. VDD = 50V, starting TJ = +25°C, l = 27mH, RG = 25Ω, IAS = 6.2A.
Note 3. ISD ≤ 6.2A, di/dt ≤ 80A/µA, VDD ≤ V(BR)DSS, TJ ≤ +150°C.
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain–Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
600
–
–
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
2.0
–
4.0
V
Gate–Source Leakage Forward
IGSS
VGS = 20V
–
–
100
nA
Gate–Source Leakage Reverse
IGSS
VGS = –20V
–
–
–100
nA
Drain–Source Leakage Current
IDSS
VDS = 600V, VGS = 0
–
–
100
µA
VDS = 480V, VGS = 0, TC = +150°C
–
–
500
µA
RDS(on)
VGS = 10V, ID = 3.7A, Note 4
–
–
1.2
Ω
Forward Transconductance
gfs
VDS ≥ 100V, ID = 3.7A, Note 4
4.7
–
–
mhos
Input Capacitance
Ciss
VGS = 0V, VDS = 25V, f = 1MHz
–
1300
–
pF
Output Capacitance
Coss
–
160
–
pF
Reverse Transfer Capacitance
Crss
–
30
–
pF
Turn–On Delay Time
td(on)
–
32
–
ns
–
18
–
ns
td(off)
–
55
–
ns
tf
–
20
–
ns
–
–
60
nC
Static Drain–Source ON Resistance
Rise Time
Turn–Off Delay Time
Fall Time
tr
VDD = 300V, ID = 6.2A, RG = 9.1Ω,
RD = 47Ω,
Ω Note 4
Total Gate Charge
Qg
Gate–Source Charge
Qgs
–
–
8.3
nC
Gate–Drain (“Miller”) Charge
Qgd
–
–
30
nC
Internal Drain Inductance
LD
–
4.5
–
nH
Internal Source Inductance
LS
–
7.5
–
nH
(Body Diode)
–
–
6.2
A
VGS = 10V, ID = 6.2A, VDS = 360V
Between lead, 6mm (.250 in) from package
and center of die contact
Source–Drain Diode Ratings and Characteristics
Continuous Source Current
IS
Pulse Source Current
ISM
(Body Diode) Note 1
–
–
25
A
Diode Forward Voltage
VSD
TJ = +25°C, IS = 6.2A, VGS = 0V, Note 4
–
–
1.5
V
Reverse Recovery Time
trr
–
450
940
ns
Reverse Recovery Charge
Qrr
TJ = +25°C, IF = 6.2A, di/dt = 100A/µs,
Note 4
–
3.8
7.9
µC
Forward Turn–On Time
ton
Intrinsic turn–on time is neglegible (turn–on is dominated by LS + LD)
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Gate
.100 (2.54)
Source
Drain/Tab