PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100µs PULSE, 10% DUTY M/A-COM PHI, INC. OUTLINE DRAWING FEATURES ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry ∗ Diffused Emitter Ballasting Resistors ∗ Gold Metalization System ∗ Internal Input and Output Impedance Matching ∗ Hermetic Metal/Ceramic Package ABSOLUTE MAXIMUM RATINGS AT 25°C Parameter Symbol Rating Units Collector-Emitter Voltage VCES 65 V Emitter-Base Voltage VEBO 3.0 V Collector Current (Peak) IC PTOT 4.0 A 120 W -65 to +200 °C 200 °C Total Power Dissipation @ +25°C Storage Temperature TSTG Tj Junction Temperature ELECTRICAL CHARACTERISTICS AT 25°C Parameter Symbol Min Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance Output Power Max Units BVCES 65 - V IC=10mA ICES - 1.5 mA VCE=40V RTH(JC) PO - 1.25 °C/W VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz 25 - W GP 9.2 - dB η VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz 45 - % VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz Power Gain Collector Efficiency Input Return Loss Test Conditions RL 6 - dB Load Mismatch Tolerance VSWR-T - 3:1 - VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz Load Mismatch Stability VSWR-S - 1.5:1 - VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz BROADBAND TEST FIXTURE IMPEDANCE F (GHz) Z IF (Ω) Z OF (Ω) 2.70 38 - j14.4 17.1 - j8.7 2.80 35 - j16.3 15.0 - j8.7 2.90 33 - j17.8 13.3 - j8.3 TEST FIXTURE INPUT CIRCUIT 50Ω Z IF TEST FIXTURE OUTPUT CIRCUIT Z OF M/A-COM POWER HYBRIDS OPERATION • 1742 CRENSHAW BLVD • TORRANCE, CA 90501 (310) 320-6160 • FAX (310) 618-9191 50Ω TEST FIXTURE ELECTRICAL SCHEMATIC - PH2729-25M M/A-COM, PHO RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE. DS046 Rev 05/25/93