2SA1953 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1953 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA • Large collector current: IC = −500 mA (max) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −15 V Collector-emitter voltage VCEO −12 V Emitter-base voltage VEBO −5 V Collector current IC −500 mA Base current IB −50 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 °C JEDEC Tstg −55~125 °C JEITA Storage temperature range TO-236MOD SC-59 TOSHIBA 2-3F1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.012 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking 1 2007-11-01 2SA1953 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −15 V, IE = 0 ⎯ ⎯ −0.1 μA Emitter cut-off current IEBO VEB = −5 V, IC = 0 ⎯ ⎯ −0.1 μA 300 ⎯ 1000 hFE DC current gain (Note) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE = −2 V, IC = −10 mA VCE (sat) (1) IC = −10 mA, IB = −0.5 mA ⎯ −15 −30 VCE (sat) (2) IC = −200 mA, IB = −10 mA ⎯ −110 −250 VBE (sat) IC = −200 mA, IB = −10 mA ⎯ −0.87 −1.2 V VCE = −2 V, IC = −10 mA 80 130 ⎯ MHz fT Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ⎯ 4.2 Collector-emitter on resistance Ron IB = −1 mA, Vin = −1 Vrms, f = 1 kHz ⎯ 0.9 ⎯ Switching time pF Turn-on time ton ⎯ 40 ⎯ Storage time tstg ⎯ 280 ⎯ ⎯ 45 ⎯ Fall time tf mV Ω ns IB1 = −IB2 = −5 mA Note: hFE classification A: 300~600, B: 500~1000 2 2007-11-01 2SA1953 3 2007-11-01 2SA1953 4 2007-11-01 2SA1953 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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