2SA1971 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1971 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −400 V Collector-emitter voltage VCEO −400 V Emitter-base voltage VEBO −7 V DC IC −0.5 Pulse ICP −1 IB −0.25 Collector current Base current Ta = 25°C Collector power dissipation Ta = 25°C Storage temperature range A 500 PC (Note 1) Junction temperature A 1000 mW Tj 150 °C Tstg −55 to 150 °C Note 1: Mounted on a ceramic substrate 250 mm2 × 0.8 t JEDEC ― JEITA ― TOSHIBA 2-5K1A Weight: 0.05 g (typ.) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21 2SA1971 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −400 V, IE = 0 ― ― −10 μA Emitter cut-off current IEBO VEB = −7 V, IC = 0 ― ― −1 μA V (BR) CEO IC = −10 mA, IB = 0 −400 ― ― V Collector-emitter breakdown voltage hFE (1) VCE = −5 V, IC = −20 mA 140 ― 450 hFE (2) VCE = −5 V, IC = −100 mA 140 ― 400 Collector-emitter saturation voltage VCE (sat) IC = −100 mA, IB = −10 mA ― −0.4 −1.0 V Base-emitter saturation voltage VBE (sat) IC = −100 mA, IB = −10 mA ― −0.76 −0.9 V VCE = −5 V, IC = −50 mA ― 35 ― MHz VCB = −10 V, IE = 0, f = 1 MHz ― 18 ― pF ― 0.2 ― ― 2.3 ― ― 0.2 ― Collector output capacitance Cob Turn-on time Switching time Storage time ton tstg 20 μs Part No. IB1 Output IB2 2 kΩ fT IB2 Transition frequency IB1 DC current gain μs VCC = −200 V Fall time tf IB1 = 10 mA, IB2 = 20 mA, duty cycle ≤ 1% Marking Part No. (or abbreviation code) A L Note 3 Lot No. Note 3: A line to the right of a Lot No. identifies the indication of product Labels. Without a line: [[Pb]]/INCLUDES > MCV With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-12-21 2SA1971 IC – VCE IC – VBE −500 −500 −40 −20 −10 Common emitter VCE = −5 V −5 −80 (mA) −400 −60 −2 Collector current IC Collector current IC (mA) −100 −300 −1 VCC IB = −0.5 mA −100 −400 −300 −200 Ta = 100°C 25 −55 −100 Common emitter Ta = 25°C 0 0 −2 −4 −6 −8 0 0 −10 −12 −14 −16 −18 −20 Collector-emitter voltage VCE (V) −0.2 −0.4 hFE – IC −1 −1.2 VBE (V) VCE (sat) – IC −30 Collector-emitter saturation voltage VCE (sat) (V) Common emitter 500 100 300 DC current gain hFE −0.8 Collector-emitter voltage 1000 25 Ta = −55°C 100 50 30 10 Common emitter 5 −0.6 VCE = −5 V 3 −1 −10 IC/IB = 10 −5 −3 −1 −0.5 25 −0.3 100 −0.1 Ta = −55°C −0.05 −10 −100 Collector current IC −0.03 −1 −1000 −10 (mA) −100 −1000 Collector current IC (mA) Safe Operating Area −3000 300 μs* −1000 IC max (pulsed)* 100 μs* (mA) IC max (continuous) VBE (sat) – IC −300 Collector current IC Base-emitter saturation voltage VBE (sat) (V) −10 Common emitter −5 IC/IB = 10 −3 −1 −55 −0.3 −0.1 −1 1 ms* −30 −3 Collector current IC −100 −1 −1 −500 (mA) DC operation Ta = 25°C 250 mm2 × 0.8 t Mounted on a ceramic substrate −10 25 −10 10 ms* −100 −0.5 Ta = 100°C 10 μs* 100 ms* *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. −3 −10 VCEO max −30 −100 −300 −1000 Collector-emitter voltage VCE (V) 3 2009-12-21 2SA1971 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application with which the Product will be used with or for. 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