2SA2017 Transistors Power Transistor (−80V, −4A) 2SA2017 !Features 1) Low VCE(sat). (Typ. –0.3V at IC/IB = −2 / −0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SC5574. !Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Collector-base voltage Collector-emitter voltage VCBO VCEO -80 -80 V V Emitter-base voltage VEBO -5 -4 V A Collector current IC -6 A(Pulse) Collector power dissipation Junction temperature PC Tj 30 W(Tc = 25°C) 150 °C Tstg -55~+150 °C Storage temperature !Packaging specifications and hFE Type 2SA2017 Package hFE Code Basic ordering unit (pieces) TO-220FN E 500 !Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit Collector-emitter breakdown voltage Collector-base breakdown voltage BVCEO BVCBO BVEBO −80 −80 - - V V −5 - - V Collector cutoff current ICBO - - −10 µA VCB = −80V Emitter cutoff current IEBO - −10 µA VEB = −4V Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VCE(sat) - - −1.5 −1.5 V V IC/IB = −2A/−0.2A Emitter-base breakdown voltage hFE 100 - 200 - Transition frequency fT - 12 - MHz Output capacitance Cob - 80 - pF DC current transfer ratio Conditions IC = −1mA IC = −50µA IE = −50µA IC/IB = −2A/−0.2A VCE/IC = −4V/−1A VCE = −12V , IE = 0.5A VCB = −10V , IE = 0A , f = 1MHz