ETC 2SA2017

2SA2017
Transistors
Power Transistor (−80V, −4A)
2SA2017
!Features
1) Low VCE(sat). (Typ. –0.3V at IC/IB = −2 / −0.2A)
2) Excellent DC current gain characteristics.
3) Pc = 30W (Tc = 25°C)
4) Wide SOA (safe operating area).
5) Complements the 2SC5574.
!Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
VCBO
VCEO
-80
-80
V
V
Emitter-base voltage
VEBO
-5
-4
V
A
Collector current
IC
-6
A(Pulse)
Collector power dissipation
Junction temperature
PC
Tj
30
W(Tc = 25°C)
150
°C
Tstg
-55~+150
°C
Storage temperature
!Packaging specifications and hFE
Type
2SA2017
Package
hFE
Code
Basic ordering unit (pieces)
TO-220FN
E
500
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-emitter breakdown voltage
Collector-base breakdown voltage
BVCEO
BVCBO
BVEBO
−80
−80
-
-
V
V
−5
-
-
V
Collector cutoff current
ICBO
-
-
−10
µA
VCB = −80V
Emitter cutoff current
IEBO
-
−10
µA
VEB = −4V
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VCE(sat)
-
-
−1.5
−1.5
V
V
IC/IB = −2A/−0.2A
Emitter-base breakdown voltage
hFE
100
-
200
-
Transition frequency
fT
-
12
-
MHz
Output capacitance
Cob
-
80
-
pF
DC current transfer ratio
Conditions
IC = −1mA
IC = −50µA
IE = −50µA
IC/IB = −2A/−0.2A
VCE/IC = −4V/−1A
VCE = −12V , IE = 0.5A
VCB = −10V , IE = 0A , f = 1MHz