2SA1862 Transistors High-voltage Switching Transistor (−400V, −2A) 2SA1862 Symbol Limits Unit Collector-base voltage Collector-emitter voltage VCBO VCEO −400 −400 V V Emitter-base voltage VEBO −7 −2 −4 V A (DC) Parameter Collector current IC Collector power dissipation PC Tj Storage temperature Tstg −55~+150 ˚C ˚C Single pulse, Pw = 10ms !Packaging specifications and hFE Type 2SA1862 Package hFE CPT3 P Code Basic ordering unit (pieces) TL 2500 !Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage BVCBO BVCEO − − − − − −0.3 − − − −10 V V V µA VCB = −400V VCE(sat) −400 −400 −7 − − − −10 −0.5 µA V VEB = −5V IC/IB = −0.5A / −0.1A Base-emitter saturation voltage VCE(sat) − − 18 30 −1.2 180 − Cob − 82 − − − V − MHz pF DC current transfer ratio Transition frequency Output capacitance Turn-on time Storage time Fall time BVEBO ICBO IEBO hFE fT Conditions IC = −50µA IC = −1mA IE = −50µA IC/IB = −0.5A / −0.1A VCE = −5V, IC = −0.1A VCB = −10V, IE = 0.1A, f = 5MHz VCE = −10V, IE = 0A, f = 1MHz ton − 0.2 − µs tstg − 1.8 − µs IC = −1A, RL = 150Ω IB1 = −IB2 = −0.2A tf − 0.4 − µs VCC 150V 0.75 0.9 5.1 6.5 2.3 W W (Tc = 25˚C) Junction temperature * 0.65 C0.5 1.5 2.5 9.5 0.5 0.8Min. * A (Pulse) 1 10 150 1.5 0.9 ROHM : CPT3 EIAJ : SC-63 !Absolute maximum ratings (Ta = 25°C) 5.5 2.3 1.0 0.5 (3) (2) (1) !External dimensions (Units : mm) 2.3 !Features 1) High breakdown voltage. (BVCEO = −400V) 2) Low saturation voltage. (Typ. VCE (sat) = −0.3V at IC / IB = −500mA / −100mA) 3) High switching speed, typically tf = 0.4µs at IC = −1A. 4) Wide SOA (safe operating area). (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)