2SD1767 / 2SD1859 Transistors Medium power transistor (80V, 0.7A) 2SD1767 / 2SD1859 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO 80 Collector-emitter voltage VCEO 80 V V Emitter-base voltage VEBO 5 IC 0.7 1 V A(DC) A(Pulse) ∗1 W ∗2 1.6 (1) Base (2) Collector (3) Emitter ROHM : MPT3 EIAJ : SC-62 0.5 PC 2 1 2SD1859 Junction temperature Tj 150 Storage temperature Tstg −55~+150 ∗3 °C °C 2SD1859 2.5 0.9 Type Package hFE Marking Code Basic ordering unit (pieces) ∗Denotes h 1.0 0.65Max. !Packaging specifications and hFE 0.5 2SD1767 MPT3 PQR 2SD1859 ATV QR DC∗ T100 1000 − TV2 2500 (1) (2) (3) 2.54 2.54 ROHM : ATV !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 80 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 80 − − V IC=2mA Emitter-base breakdown voltage BVEBO 5 − − V IE=50µA ICBO − − 0.5 µA VCB=50V IEBO − − 0.5 µA VEB=4V VCE(sat) − 0.2 0.4 V 82 − 390 − Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio 2SD1767 hFE 120 − 390 − Transition frequency fT − 120 − MHz Output capacitance Cob − 10 − pF 2SD1859 1.05 0.45 Taping specifications FE Parameter 4.4 6.8 ∗1 Pw=10ms, duty=1/2 ∗2 When mounted on a 40×40×0.7 mm ceramic board. ∗3 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger. 14.5 2SD1767 4.5 0.5 1.5 Unit 0.4 Limits 1.5 0.4 Symbol Collector power dissipation (1) (3) Parameter Collector-base voltage Collector current 0.5 (2) 3.0 !Absolute maximum ratings (Ta=25°C) 2.5 Conditions IC/IB=500mA/50mA VCE/IC=3V/0.1A VCE=10V, IE=−50mA, f=100MHz VCB=10V, IE=0A, f=1MHz (1) Emitter (2) Collector (3) Base